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Description
In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals in the plasma react with the carbon groups leading to carbon removal for the ILD films. Results indicate that an N2 plasma forms an amide-like layer on the surface which apparently leads to reduced carbon abstraction from an H2 plasma process. In addition, FTIR spectra indicate the formation of hydroxyl (Si-OH) groups following the plasma exposure. Increased temperature (380 °C) processing leads to a reduction of the hydroxyl group formation compared to ambient temperature processes, resulting in reduced changes of the dielectric constant. For CMP Cu surfaces, the carbonate contamination was removed by an H2 plasma process at elevated temperature while the C-C and C-H contamination was removed by an N2 plasma process at elevated temperature. The second part of this study examined oxide stability and cleaning of Ru surfaces as well as consequent Cu film thermal stability with the Ru layers. The ~2 monolayer native Ru oxide was reduced after H-plasma processing. The thermal stability or islanding of the Cu film on the Ru substrate was characterized by in-situ XPS. After plasma cleaning of the Ru adhesion layer, the deposited Cu exhibited full coverage. In contrast, for Cu deposition on the Ru native oxide substrate, Cu islanding was detected and was described in terms of grain boundary grooving and surface and interface energies. The thermal stability of 7 nm Ti, Pt and Ru ii interfacial adhesion layers between a Cu film (10 nm) and a Ta barrier layer (4 nm) have been investigated in the third part. The barrier properties and interfacial stability have been evaluated by Rutherford backscattering spectrometry (RBS). Atomic force microscopy (AFM) was used to measure the surfaces before and after annealing, and all the surfaces are relatively smooth excluding islanding or de-wetting phenomena as a cause of the instability. The RBS showed no discernible diffusion across the adhesion layer/Ta and Ta/Si interfaces which provides a stable underlying layer. For a Ti interfacial layer RBS indicates that during 400 °C annealing Ti interdiffuses through the Cu film and accumulates at the surface. For the Pt/Cu system Pt interdiffuion is detected which is less evident than Ti. Among the three adhesion layer candidates, Ru shows negligible diffusion into the Cu film indicating thermal stability at 400 °C.
ContributorsLiu, Xin (Author) / Nemanich, Robert (Thesis advisor) / Chamberlin, Ralph (Committee member) / Chen, Tingyong (Committee member) / Smith, David (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2012
Description
2D materials with reduced symmetry have gained great interest in the past decade due to the arising quantum properties introduced by the structural asymmetry. A particular example is called 2D Janus materials. Named after Roman god Janus with two faces, Janus materials have different chemical compositions on the two sides of materials, leading to a structure with broken mirror symmetry. Electronegativity difference of the facial elements induces a built-in polarization field pointing out of the plane, which has driven a lot of theory predictions on Rashba splitting, high- temperature ferromagnetism, Skyrmion formation, and so on. Previously reported experimental synthesis of Janus 2D materials relies on high-temperature processing, which limits the crystallinity of as produced 2D layers. In this dissertation, I present a room temperature selective epitaxial atomic re- placement (SEAR) method to convert CVD-grown transition metal dichalcogenides (TMDs) into a Janus structure. Chemically reactive H2 plasma is used to selectively etch off the top layer of chalcogen atoms and the introduction of replacement chalco- gen source in-situ allows for the achievement of Janus structures in one step at room temperature. It is confirmed that the produced Janus monolayers possess high crys- tallinity and good excitonic properties. Moving forward, I show the fabrication of lateral and vertical heterostructures of Janus materials, which are predicted to show exotic properties because of the intrinsic polarization field. To efficiently screen other kinds of interesting Janus structures, a new plasma chamber is designed to allow in-situ optical measurement on the target monolayer during the SEAR process. Successful conversion is seen on mechanically exfoliated MoSe2 and WSe2, and insights into reaction kinetics are gain from Raman spectra evolution. Using the monitoring ability, Janus SNbSe is synthesized for the first time. It’s also demonstrated that the overall crystallinity of as produced Janus monolayer
SWSe and SMoSe are correlated with the source of monolayer TMDs.
Overall, the synthesis of the Janus monolayers using the described method paves the way to the production of highly crystalline Janus materials, and with the in-situ monitoring ability, a deeper understanding of the mechanism is reached. This will accelerate future exploration of other Janus materials synthesis, and confirmation and discovery of their exciting quantum properties.
ContributorsQin, Ying (Author) / Tongay, Sefaattin (Thesis advisor) / Zhuang, Houlong (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2021