Matching Items (6)
Description
The electrode-electrolyte interface in electrochemical environments involves the understanding of complex processes relevant for all electrochemical applications. Some of these processes include electronic structure, charge storage, charge transfer, solvent dynamics and structure and surface adsorption. In order to engineer electrochemical systems, no matter the function, requires fundamental intuition of all the processes at the interface. The following work presents different systems in which the electrode-electrolyte interface is highly important. The first is a charge storage electrode utilizing percolation theory to develop an electrode architecture producing high capacities. This is followed by Zn deposition in an ionic liquid in which the deposition morphology is highly dependant on the charge transfer and surface adsorption at the interface. Electrode Architecture: A three-dimensional manganese oxide supercapacitor electrode architecture is synthesized by leveraging percolation theory to develop a hierarchically designed tri-continuous percolated network. The three percolated phases include a faradaically-active material, electrically conductive material and pore-former templated void space. The micropores create pathways for ionic conductivity, while the nanoscale electrically conducting phase provides both bulk conductivity and local electron transfer with the electrochemically active phase. Zn Electrodeposition: Zn redox in air and water stable N-ethyl-N-methylmorpholinium bis(trifluoromethanesulfonyl)imide, [C2nmm][NTf2] is presented. Under various conditions, characterization of overpotential, kinetics and diffusion of Zn species and morphological evolution as a function of overpotential and Zn concentration are analyzed. The surface stress evolution during Zn deposition is examined where grain size and texturing play significant rolls in compressive stress generation. Morphological repeatability in the ILs led to a novel study of purity in ionic liquids where it is found that surface adsorption of residual amine and chloride from the organic synthesis affect growth characteristics. The drivers of this work are to understand the processes occurring at the electrode-electrolyte interface and with that knowledge, engineer systems yielding optimal performance. With this in mind, the design of a bulk supercapacitor electrode architecture with excellent composite specific capacitances, as well as develop conditions producing ideal Zn deposition morphologies was completed.
ContributorsEngstrom, Erika (Author) / Friesen, Cody (Thesis advisor) / Buttry, Daniel (Committee member) / Sieradzki, Karl (Committee member) / Arizona State University (Publisher)
Created2011
Description
Soft magnetic alloys play a significant role for magnetic recording applications and highly sensitivity magnetic field sensors. In order to sustain the magnetic areal density growth, development of new synthesis techniques and materials is necessary. In this work, the effect of oxygen incorporation during electrodeposition of CoFe alloys on magnetic properties, magnetoresistance and structural properties has been studied. Understanding the magnetic properties often required knowledge of oxygen distribution and structural properties of the grown films. Transmission electron microscopy (TEM) was a powerful tool in this study to correlate the oxygen-distribution nanostructure to the magnetic properties of deposited films. Off-axis electron holography in TEM was used to measure magnetic domain wall width in the deposited films. Elemental depth profiles of Fe, Co, O were investigated by secondary ion mass spectroscopy (SIMS). Magnetic properties have been determined by superconducting quantum interference device (SQUID) measurements. Oxygen content in the CoFe deposited films was controlled by electrolyte composition. Films were deposited on Si 100 substrates and on other substrates such as Cu and Al. However, a good film quality was achieved on Si substrate. Electron energy loss and x-ray spectroscopies showed that the low oxygen films contained intragranular Fe2+ oxide (FeO) particles and that the high oxygen films contained intergranular Fe3+ (Fe2O3) along grain boundaries. The films with oxide present at the grain boundary had significantly increased coercivity, magnetoresistance and reduced saturation magnetization relative to the lower oxygen content films with intragranular oxide. The differences in magnetic properties between low oxygen and high oxygen concentration films were attributed to stronger mobile domain wall interactions with the grain boundary oxide layers. The very high magnetoresistance values were achieved for magnetic devices with nanocontact dimension < 100 nm and oxide incorporation in this nanoconfined geometry. The content of oxide phase in nanocontact was controlled by concentration of the Fe3+ ions in the electrodeposition solution. Magnetic device integrity was improved by varying amount of additive into plating solution. These results indicated that electrodeposited CoFe nanocontact is a novel class of materials with large application for magnetic field sensors.
ContributorsElhalawaty, Shereen (Author) / Carpenter, Ray (Thesis advisor) / Chamberlin, Ralph (Committee member) / McCartney, Martha (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2012
Description
This work demonstrates a capable reverse pulse deposition methodology to influence gap fill behavior inside microvia along with a uniform deposit in the fine line patterned regions for substrate packaging applications. Interconnect circuitry in IC substrate packages comprises of stacked microvia that varies in depth from 20µm to 100µm with an aspect ratio of 0.5 to 1.5 and fine line patterns defined by photolithography. Photolithography defined pattern regions incorporate a wide variety of feature sizes including large circular pad structures with diameter of 20µm - 200µm, fine traces with varying widths of 3µm - 30µm and additional planar regions to define a IC substrate package. Electrodeposition of copper is performed to establish the desired circuit. Electrodeposition of copper in IC substrate applications holds certain unique challenges in that they require a low cost manufacturing process that enables a void-free gap fill inside the microvia along with uniform deposition of copper on exposed patterned regions. Deposition time scales to establish the desired metal thickness for such packages could range from several minutes to few hours. This work showcases a reverse pulse electrodeposition methodology that achieves void-free gap fill inside the microvia and uniform plating in FLS (Fine Lines and Spaces) regions with significantly higher deposition rates than traditional approaches. In order to achieve this capability, systematic experimental and simulation studies were performed. A strong correlation of independent parameters that govern the electrodeposition process such as bath temperature, reverse pulse plating parameters and the ratio of electrolyte concentrations is shown to the deposition kinetics and deposition uniformity in fine patterned regions and gap fill rate inside the microvia. Additionally, insight into the physics of via fill process is presented with secondary and tertiary current simulation efforts. Such efforts lead to show “smart” control of deposition rate at the top and bottom of via to avoid void formation. Finally, a parametric effect on grain size and the ensuing copper metallurgical characteristics of bulk copper is also shown to enable high reliability substrate packages for the IC packaging industry.
ContributorsGanesan, Kousik (Author) / Tasooji, Amaneh (Thesis advisor) / Manepalli, Rahul (Committee member) / Alford, Terry (Committee member) / Chan, Candace (Committee member) / Arizona State University (Publisher)
Created2018
Description
Cellular metamaterials arouse broad scientific interests due to the combination of host material and structure together to achieve a wide range of physical properties rarely found in nature. Stochastic foam as one subset has been considered as a competitive candidate for versatile applications including heat exchangers, battery electrodes, automotive, catalyst devices, magnetic shielding, etc. For the engineering of the cellular foam architectures, closed-form models that can be used to predict the mechanical and thermal properties of foams are highly desired especially for the recently developed ultralight weight shellular architectures. Herein, for the first time, a novel packing three-dimensional (3D) hollow pentagonal dodecahedron (HPD) model is proposed to simulate the cellular architecture with hollow struts. An electrochemical deposition process is utilized to manufacture the metallic hollow foam architecture. Mechanical and thermal testing of the as-manufactured foams are carried out to compare with the HPD model. Timoshenko beam theory is utilized to verify and explain the derived power coefficient relation. Our HPD model is proved to accurately capture both the topology and the physical properties of hollow stochastic foam. Understanding how the novel HPD model packing helps break the conventional impression that 3D pentagonal topology cannot fulfill the space as a representative volume element. Moreover, the developed HPD model can predict the mechanical and thermal properties of the manufactured hollow metallic foams and elucidating of how the inevitable manufacturing defects affect the physical properties of the hollow metallic foams. Despite of the macro-scale stochastic foam architecture, nano gradient gyroid lattices are studied using Molecular Dynamics (MD) simulation. The simulation result reveals that, unlike homogeneous architecture, gradient gyroid not only shows novel layer-by-layer deformation behavior, but also processes significantly better energy absorption ability. The deformation behavior and energy absorption are predictable and designable, which demonstrate its highly programmable potential.
ContributorsDai, Rui (Author) / Nian, Qiong (Thesis advisor) / Jiao, Yang (Committee member) / Kwon, Beomjin (Committee member) / Liu, Yongming (Committee member) / Phelan, Patrick (Committee member) / Arizona State University (Publisher)
Created2021
Description
Over the last decade copper electrodeposition has become the dominant process by which microelectronic interconnects are made. Replacing ultra-high vacuum evaporative film growth, the technology known as the Cu damascene process has been widely implemented in the microelectronics industry since the early 2000s. The transition from vacuum film growth to electrodeposition was enabled by solution chemistries that provide "bottom-up" or superfilling capability of vias and trenches. While the process has been and is used widely, the actual mechanisms responsible for superfilling remain relatively unknown. This dissertation presents and discusses the background and results of experimental investigations that have been done using in situ electrochemical surface stress monitoring techniques to study the evolution of stress on Cu{111} thin film electrodes. Because of its extreme sensitivity to the structure on both the electrode and solution sides of the interface, surface stress monitoring as analytical technique is well suited for the study of electrodeposition. These ultra-high resolution stress measurements reveal the dynamic response of copper electrodes to a number of electrochemical and chemical experimental variables. In the case of constant current pulsed deposition and stripping, the surface stress evolution depends not only on the magnitude of the current pulse, but also shows a marked response to plating bath composition. The plating bath chemistries used in this work include (1) additive free, (2) deposition suppressing solutions that include polyethylene glycol (PEG) and sodium chloride (NaCl) as well as (3) full additive solution combinations which contain PEG, NaCl, and a one of two deposition accelerating species (bis-(sodiumsulfopropyl)disulfide (SPS) or mercaptopropane sulfonic acid (MPS)). The development of thin film stress is further investigated through a series of solution exchange experiments that correlate the magnitude of electrode exchange current density and the stress state of the film. Remarkably, stress changes as large as ~8.5 N/m are observed during solution exchanges at the open circuit potential. Overall, this research demonstrates that solution chemistry can have a large impact on thin film stress evolution, even for very small deposition thicknesses (e.g. <10 ML) or in the absence of net addition or removal of material from the electrode.
ContributorsHeaton, Thomas Stanley (Author) / Friesen, Cody (Thesis advisor) / Buttry, Daniel (Committee member) / Sieradzki, Karl (Committee member) / Arizona State University (Publisher)
Created2011
Description
Lateral programmable metallization cells (PMC) utilize the properties of electrodeposits grown over a solid electrolyte channel. Such devices have an active anode and an inert cathode separated by a long electrodeposit channel in a coplanar arrangement. The ability to transport large amount of metallic mass across the channel makes these devices attractive for various More-Than-Moore applications. Existing literature lacks a comprehensive study of electrodeposit growth kinetics in lateral PMCs. Moreover, the morphology of electrodeposit growth in larger, planar devices is also not understood. Despite the variety of applications, lateral PMCs are not embraced by the semiconductor industry due to incompatible materials and high operating voltages needed for such devices. In this work, a numerical model based on the basic processes in PMCs – cation drift and redox reactions – is proposed, and the effect of various materials parameters on the electrodeposit growth kinetics is reported. The morphology of the electrodeposit growth and kinetics of the electrodeposition process are also studied in devices based on Ag-Ge30Se70 materials system. It was observed that the electrodeposition process mainly consists of two regimes of growth – cation drift limited regime and mixed regime. The electrodeposition starts in cation drift limited regime at low electric fields and transitions into mixed regime as the field increases. The onset of mixed regime can be controlled by applied voltage which also affects the morphology of electrodeposit growth. The numerical model was then used to successfully predict the device kinetics and onset of mixed regime. The problem of materials incompatibility with semiconductor manufacturing was solved by proposing a novel device structure. A bilayer structure using semiconductor foundry friendly materials was suggested as a candidate for solid electrolyte. The bilayer structure consists of a low resistivity oxide shunt layer on top of a high resistivity ion carrying oxide layer. Devices using Cu2O as the low resistivity shunt on top of Cu doped WO3 oxide were fabricated. The bilayer devices provided orders of magnitude improvement in device performance in the context of operating voltage and switching time. Electrical and materials characterization revealed the structure of bilayers and the mechanism of electrodeposition in these devices.
ContributorsChamele, Ninad (Author) / Kozicki, Michael (Thesis advisor) / Barnaby, Hugh (Committee member) / Newman, Nathan (Committee member) / Gonzalez-Velo, Yago (Committee member) / Arizona State University (Publisher)
Created2020