Miedema's plot is used to select the Cu/metal barrier for Cu metallization.The Cu/metal barrier system selected should have positive heat of formation (Hf) so that there is no intermixing between the two layers. In this case, Ru is chosen as a potential candidate, and then the barrier properties of sputtered…
Miedema's plot is used to select the Cu/metal barrier for Cu metallization.The Cu/metal barrier system selected should have positive heat of formation (Hf) so that there is no intermixing between the two layers. In this case, Ru is chosen as a potential candidate, and then the barrier properties of sputtered Cu/Ru thin films on thermally grown SiO2 substrates are investigated by Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), and electrical resistivity measurement. The Cu/Ru/SiO2 samples are analyzed prior to and after vacuum annealing at various temperatures of 400, 500, and 600 oC and at different interval of times of 0.5, 1 and 2 hrs for each temperature. Backscattering analysis indicate that both the copper and ruthenium thin films are thermally stable at high temperature of 600 oC, without any interdiffusion and chemical reaction between Cu and Ru thin films. No new phase formation is observed in any of the Cu/Ru/SiO2 samples. The XRD data indicate no new phase formation in any of the annealed Cu/Ru/SiO2 samples and confirmed excellent thermal stability of Cu on Ru layer. The electrical resistivity measurement indicated that the electrical resistivity value of the copper thin films annealed at 400, 500, and 600 oC is essentially constant and the copper films are thermally stable on Ru, no reaction occurs between copper films and Ru the layer. Cu/Ru/SiO2 multilayered thin film samples have been shown to possess good mechanical strength and adhesion between the Cu and Ru layers compared to the Cu/SiO2 thin film samples. The strength evaluation is carried out under static loading conditions such as nanoindentation testing. In this study, evaluation and comparison is donebased on the dynamic deformation behavior of Cu/Ru/SiO2 and Cu/SiO2 samples under scratch loading condition as a measure of tribological properties. Finally, the deformation behavior under static and dynamic loading conditions is understood using the scanning electron microscope (SEM) and the focused ionbeam imaging microscope (FIB) for topographical and cross-sectional imaging respectively.
Leonard Hayflick studied the processes by which cells age during the twentieth and twenty-first centuries in the United States. In 1961 at the Wistar Institute in the US, Hayflick researched a phenomenon later called the Hayflick Limit, or the claim that normal human cells can only divide forty to sixty…
Leonard Hayflick studied the processes by which cells age during the twentieth and twenty-first centuries in the United States. In 1961 at the Wistar Institute in the US, Hayflick researched a phenomenon later called the Hayflick Limit, or the claim that normal human cells can only divide forty to sixty times before they cannot divide any further. Researchers later found that the cause of the Hayflick Limit is the shortening of telomeres, or portions of DNA at the ends of chromosomes that slowly degrade as cells replicate. Hayflick used his research on normal embryonic cells to develop a vaccine for polio, and from HayflickÕs published directions, scientists developed vaccines for rubella, rabies, adenovirus, measles, chickenpox and shingles.
Although best known for his work with the fruit fly, for which he earned a Nobel Prize and the title "The Father of Genetics," Thomas Hunt Morgan's contributions to biology reach far beyond genetics. His research explored questions in embryology, regeneration, evolution, and heredity, using a variety of approaches.
