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Despite recent strides for awareness, treatment, and control of hypertension, prevalence remains high with estimates suggesting one third of Americans have hypertension. The hypotensive effects of potassium and magnesium have been known and administered in a clinical setting for nearly a century. The purpose of this study was to examine

Despite recent strides for awareness, treatment, and control of hypertension, prevalence remains high with estimates suggesting one third of Americans have hypertension. The hypotensive effects of potassium and magnesium have been known and administered in a clinical setting for nearly a century. The purpose of this study was to examine the effectiveness of taking a potassium/magnesium supplement to help reduce blood pressure in individuals with mildly-moderately elevated blood pressure. In this randomized, controlled crossover trial, potassium and magnesium supplementation was explored among healthy adults with mildly elevated blood pressure in Phoenix, Arizona. Subjects (n = 12) were randomly assigned to ingest either the treatment chewy bar (217 mg potassium/day; 70.8 mg magnesium/day) or a placebo chewy bar for four weeks. For the subsequent four weeks, subjects ingested the other corresponding chewy bar. Systolic (SBP), diastolic (DBP), and average blood pressure values were not significantly different between the two groups (p = 0.645, p = 0.464 and p = 0.939, respectively). Baseline mean blood pressure was 121.0/75.7 mm Hg. The 12 subjects (8 females, 4 males) had a mean age of 29.3 years old and a mean BMI of 26.2. After four weeks, the treatment group had a slightly higher SBP (118.3 ± 13.3 mm Hg) than the control group (116.5 ± 17.8 mm Hg); however, DBP was lower in the treatment group (71.7 ± 12.4 mm Hg) than the control group (73.0 ± 10.0 mm Hg). In conclusion, daily supplementation of potassium and magnesium (217.2 mg/day and 70.8 mg/day, respectively) did not significantly lower blood pressure in adults with mildly-moderately elevated blood pressure.
ContributorsPawloski, Jason (Author) / Johnston, Carol (Thesis advisor) / Vega-Lopez, Sonia (Committee member) / Lespron, Christy (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Polycrystalline CdS/CdTe solar cells continue to dominate the thin-film photovoltaics industry with an achieved record efficiency of over 22% demonstrated by First Solar, yet monocrystalline CdTe devices have received considerably less attention over the years. Monocrystalline CdTe double-heterostructure solar cells show great promise with respect to addressing the problem of

Polycrystalline CdS/CdTe solar cells continue to dominate the thin-film photovoltaics industry with an achieved record efficiency of over 22% demonstrated by First Solar, yet monocrystalline CdTe devices have received considerably less attention over the years. Monocrystalline CdTe double-heterostructure solar cells show great promise with respect to addressing the problem of low Voc with the passing of the 1 V benchmark. Rapid progress has been made in driving the efficiency in these devices ever closer to the record presently held by polycrystalline thin-films. This achievement is primarily due to the utilization of a remote p-n heterojunction in which the heavily doped contact materials, which are so problematic in terms of increasing non-radiative recombination inside the absorber, are moved outside of the CdTe double heterostructure with two MgyCd1-yTe barrier layers to provide confinement and passivation at the CdTe surfaces. Using this design, the pursuit and demonstration of efficiencies beyond 20% in CdTe solar cells is reported through the study and optimization of the structure barriers, contacts layers, and optical design. Further development of a wider bandgap MgxCd1-xTe solar cell based on the same design is included with the intention of applying this knowledge to the development of a tandem solar cell constructed on a silicon subcell. The exploration of different hole-contact materials—ZnTe, CuZnS, and a-Si:H—and their optimization is presented throughout the work. Devices utilizing a-Si:H hole contacts exhibit open-circuit voltages of up to 1.11 V, a maximum total-area efficiency of 18.5% measured under AM1.5G, and an active-area efficiency of 20.3% for CdTe absorber based devices. The achievement of voltages beyond 1.1V while still maintaining relatively high fill factors with no rollover, either before or after open-circuit, is a promising indicator that this approach can result in devices surpassing the 22% record set by polycrystalline designs. MgxCd1-xTe absorber based devices have been demonstrated with open-circuit voltages of up to 1.176 V and a maximum active-area efficiency of 11.2%. A discussion of the various loss mechanisms present within these devices, both optical and electrical, concludes with the presentation of a series of potential design changes meant to address these issues.
ContributorsBecker, Jacob J (Author) / Zhang, Yong-Hang (Thesis advisor) / Bertoni, Mariana (Committee member) / Vasileska, Dragica (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2017