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Measurements of the response of superconducting nanowire single photon detector (SNSPD) devices to changes in various forms of input power can be used for characterization of the devices and for probing device-level physics. Two niobium nitride (NbN) superconducting nanowires developed for use as SNSPD devices are embedded as the inductive

Measurements of the response of superconducting nanowire single photon detector (SNSPD) devices to changes in various forms of input power can be used for characterization of the devices and for probing device-level physics. Two niobium nitride (NbN) superconducting nanowires developed for use as SNSPD devices are embedded as the inductive (L) component in resonant inductor/capacitor (LC) circuits coupled to a microwave transmission line. The capacitors are low loss commercial chip capacitors which limit the internal quality factor of the resonators to approximately $Qi = 170$. The resonator quality factor, approximately $Qr = 23$, is dominated by the coupling to the feedline and limits the detection bandwidth to on the order of 1MHz. In our experiments with this first generation device, we measure the response of the SNSPD devices to changes in thermal and optical power in both the time domain and the frequency domain. Additionally, we explore the non-linear response of the devices to an applied bias current. For these nanowires, we find that the band-gap energy is $\Delta_0 \approx 1.1$meV and that the density of states at the Fermi energy is $N_0 \sim 10^{10}$/eV/$\mu$m$^3$.

We present the results of experimentation with a superconducting nanowire that can be operated in two detection modes: i) as a kinetic inductance detector (KID) or ii) as a single photon detector (SPD). When operated as a KID mode in linear mode, the detectors are AC-biased with tones at their resonant frequencies of 45.85 and 91.81MHz. When operated as an SPD in Geiger mode, the resonators are DC biased through cryogenic bias tees and each photon produces a sharp voltage step followed by a ringdown signal at the resonant frequency of the detector. We show that a high AC bias in KID mode is inferior for photon counting experiments compared to operation in a DC-biased SPD mode due to the small fraction of time spent near the critical current with an AC bias. We find a photon count rate of $\Gamma_{KID} = 150~$photons/s/mA in a critically biased KID mode and a photon count rate of $\Gamma_{SPD} = 10^6~$photons/s/mA in SPD mode.

This dissertation additionally presents simulations of a DC-biased, frequency-multiplexed readout of SNSPD devices in Advanced Design System (ADS), LTspice, and Sonnet. A multiplexing factor of 100 is achievable with a total count rate of $>5$MHz. This readout could enable a 10000-pixel array for astronomy or quantum communications. Finally, we present a prototype array design based on lumped element components. An early implementation of the array is presented with 16 pixels in the frequency range of 74.9 to 161MHz. We find good agreement between simulation and experimental data in both the time domain and the frequency domain and present modifications for future versions of the array.
ContributorsSchroeder, Edward, Ph.D (Author) / Mauskopf, Philip (Thesis advisor) / Chamberlin, Ralph (Committee member) / Lindsay, Stuart (Committee member) / Newman, Nathan (Committee member) / Easson, Damien (Committee member) / Arizona State University (Publisher)
Created2018
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Description
A series of Molybdenum-Copper bilayers were studied for use in 120mK superconducting transition edge sensors for spectrometer applications. The Transition temperature (TC) was tuned to the desired temperature using the proximity effect, by adjusting the thickness of a normal copper layer in direct contact with the superconducting molybdenum layer

A series of Molybdenum-Copper bilayers were studied for use in 120mK superconducting transition edge sensors for spectrometer applications. The Transition temperature (TC) was tuned to the desired temperature using the proximity effect, by adjusting the thickness of a normal copper layer in direct contact with the superconducting molybdenum layer in a proximitized bilayer structure. The bilayers have a fixed normal metal thickness dCu=1250 Å, on top of a variable superconductor thickness 650 Å ≤ dMo ≤ 1000 Å. Material characterization techniques including X-ray Diffraction (XRD), Rutherford Backscattering Spectroscopy (RBS), Atomic Force Microscopy (AFM), and 4-point electrical characterization are used to characterize the films. Film TC are compared with the results of the Usadel proximity theory. The results of RBS analysis demonstrated that some Argon-contamination is observed at the Mo film-substrate interface, which correlates with bilayer surface roughness (as observed with AFM), reduced crystalline quality (via XRD Rocking Curve), and a deviation from the theoretical expected TC for a bilayer. The Argon contamination is presumably the cause of interface roughness, reducing the interface transmission coefficient in the Usadel model, and producing the discrepancy from the expected TC.
ContributorsKopas, Cameron (Author) / Newman, Nathan (Thesis advisor) / Singh, Rakesh (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2014