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- All Subjects: Temperature
- Genre: Academic theses
- Creators: Elkeshky, Maie Mohamed
Description
The importance of unsaturated soil behavior stems from the fact that a vast majority of infrastructures are founded on unsaturated soils. Research has recently been concentrated on unsaturated soil properties. In the evaluation of unsaturated soils, researchers agree that soil water retention characterized by the soil water characteristic curve (SWCC) is among the most important factors when assessing fluid flow, volume change and shear strength for these soils. The temperature influence on soil moisture flow is a major concern in the design of important engineering systems such as barriers in underground repositories for radioactive waste disposal, ground-source heat pump (GSHP) systems, evapotranspirative (ET) covers and pavement systems.. Accurate modeling of the temperature effect on the SWCC may lead to reduction in design costs, simpler constructability, and hence, more sustainable structures. . The study made use of two possible approaches to assess the temperature effect on the SWCC. In the first approach, soils were sorted from a large soil database into families of similar properties but located on sites with different MAAT. The SWCCs were plotted for each family of soils. Most families of soils showed a clear trend indicating the influence of temperature on the soil water retention curve at low degrees of saturation.. The second approach made use of statistical analysis. It was demonstrated that the suction increases as the MAAT decreases. The statistical analysis showed that even though the plasticity index proved to have the greatest influence on suction, the mean annual air temperature effect proved not to be negligible. In both approaches, a strong relationship between temperature, suction and soil properties was observed. Finally, a comparison of the model based on the mean annual air temperature environmental factor was compared to another model that makes use of the Thornthwaite Moisture Index (TMI) to estimate the environmental effects on the suction of unsaturated soils. Results showed that the MAAT can be a better indicator when compared to the TMI found but the results were inconclusive due to the lack of TMI data available.
ContributorsElkeshky, Maie Mohamed (Author) / Zapata, Claudia E (Thesis advisor) / Houston, Sandra (Committee member) / Kavazanjian, Edward (Committee member) / Arizona State University (Publisher)
Created2011
Description
Gallium Nitride (GaN) based microelectronics technology is a fast growing and most exciting semiconductor technology in the fields of high power and high frequency electronics. Excellent electrical properties of GaN such as high carrier concentration and high carrier motility makes GaN based high electron mobility transistors (HEMTs) a preferred choice for RF applications. However, a very high temperature in the active region of the GaN HEMT leads to a significant degradation of the device performance by effecting carrier mobility and concentration. Thus, thermal management in GaN HEMT in an effective manner is key to this technology to reach its full potential.
In this thesis, an electro-thermal model of an AlGaN/GaN HEMT on a SiC substrate is simulated using Silvaco (Atlas) TCAD tools. Output characteristics, current density and heat flow at the GaN-SiC interface are key areas of analysis in this work. The electrical characteristics show a sharp drop in drain currents for higher drain voltages. Temperature profile across the device is observed. At the interface of GaN-SiC, there is a sharp drop in temperature indicating a thermal resistance at this interface. Adding to the existing heat in the device, this difference heat is reflected back into the device, further increasing the temperatures in the active region. Structural changes such as GaN micropits, were introduced at the GaN-SiC interface along the length of the device, to make the heat flow smooth rather than discontinuous. With changing dimensions of these micropits, various combinations were tried to reduce the temperature and enhance the device performance. These GaN micropits gave effective results by reducing heat in active region, by spreading out the heat on to the sides of the device rather than just concentrating right below the hot spot. It also helped by allowing a smooth flow of heat at the GaN-SiC interface. There was an increased peak current density in the active region of the device contributing to improved electrical characteristics. In the end, importance of thermal management in these high temperature devices is discussed along with future prospects and a conclusion of this thesis.
In this thesis, an electro-thermal model of an AlGaN/GaN HEMT on a SiC substrate is simulated using Silvaco (Atlas) TCAD tools. Output characteristics, current density and heat flow at the GaN-SiC interface are key areas of analysis in this work. The electrical characteristics show a sharp drop in drain currents for higher drain voltages. Temperature profile across the device is observed. At the interface of GaN-SiC, there is a sharp drop in temperature indicating a thermal resistance at this interface. Adding to the existing heat in the device, this difference heat is reflected back into the device, further increasing the temperatures in the active region. Structural changes such as GaN micropits, were introduced at the GaN-SiC interface along the length of the device, to make the heat flow smooth rather than discontinuous. With changing dimensions of these micropits, various combinations were tried to reduce the temperature and enhance the device performance. These GaN micropits gave effective results by reducing heat in active region, by spreading out the heat on to the sides of the device rather than just concentrating right below the hot spot. It also helped by allowing a smooth flow of heat at the GaN-SiC interface. There was an increased peak current density in the active region of the device contributing to improved electrical characteristics. In the end, importance of thermal management in these high temperature devices is discussed along with future prospects and a conclusion of this thesis.
ContributorsSuri, Suraj (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragika (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2016