Matching Items (163)
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- All Subjects: Electrical Engineering
- Creators: Chakrabarti, Chaitali
- Creators: Yu, Hongbin
- Creators: Ogras, Umit Y.
Description
Process variations have become increasingly important for scaled technologies starting at 45nm. The increased variations are primarily due to random dopant fluctuations, line-edge roughness and oxide thickness fluctuation. These variations greatly impact all aspects of circuit performance and pose a grand challenge to future robust IC design. To improve robustness, efficient methodology is required that considers effect of variations in the design flow. Analyzing timing variability of complex circuits with HSPICE simulations is very time consuming. This thesis proposes an analytical model to predict variability in CMOS circuits that is quick and accurate. There are several analytical models to estimate nominal delay performance but very little work has been done to accurately model delay variability. The proposed model is comprehensive and estimates nominal delay and variability as a function of transistor width, load capacitance and transition time. First, models are developed for library gates and the accuracy of the models is verified with HSPICE simulations for 45nm and 32nm technology nodes. The difference between predicted and simulated σ/μ for the library gates is less than 1%. Next, the accuracy of the model for nominal delay is verified for larger circuits including ISCAS'85 benchmark circuits. The model predicted results are within 4% error of HSPICE simulated results and take a small fraction of the time, for 45nm technology. Delay variability is analyzed for various paths and it is observed that non-critical paths can become critical because of Vth variation. Variability on shortest paths show that rate of hold violations increase enormously with increasing Vth variation.
ContributorsGummalla, Samatha (Author) / Chakrabarti, Chaitali (Thesis advisor) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore potential applications such as resonant clocking and on-chip voltage regulation. A system level study is conducted to evaluate the effect of on-chip voltage regulator employing magnetic inductors as the output filter. It is concluded that neuromorphic power controller is beneficial for fine-grained per-core power management in conjunction with on-chip voltage regulators utilizing scaled magnetic inductors.
ContributorsSinha, Saurabh (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Yu, Hongbin (Committee member) / Christen, Jennifer B. (Committee member) / Arizona State University (Publisher)
Created2011
Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
Description
Redundant Binary (RBR) number representations have been extensively used in the past for high-throughput Digital Signal Processing (DSP) systems. Data-path components based on this number system have smaller critical path delay but larger area compared to conventional two's complement systems. This work explores the use of RBR number representation for implementing high-throughput DSP systems that are also energy-efficient. Data-path components such as adders and multipliers are evaluated with respect to critical path delay, energy and Energy-Delay Product (EDP). A new design for a RBR adder with very good EDP performance has been proposed. The corresponding RBR parallel adder has a much lower critical path delay and EDP compared to two's complement carry select and carry look-ahead adder implementations. Next, several RBR multiplier architectures are investigated and their performance compared to two's complement systems. These include two new multiplier architectures: a purely RBR multiplier where both the operands are in RBR form, and a hybrid multiplier where the multiplicand is in RBR form and the other operand is represented in conventional two's complement form. Both the RBR and hybrid designs are demonstrated to have better EDP performance compared to conventional two's complement multipliers. The hybrid multiplier is also shown to have a superior EDP performance compared to the RBR multiplier, with much lower implementation area. Analysis on the effect of bit-precision is also performed, and it is shown that the performance gain of RBR systems improves for higher bit precision. Next, in order to demonstrate the efficacy of the RBR representation at the system-level, the performance of RBR and hybrid implementations of some common DSP kernels such as Discrete Cosine Transform, edge detection using Sobel operator, complex multiplication, Lifting-based Discrete Wavelet Transform (9, 7) filter, and FIR filter, is compared with two's complement systems. It is shown that for relatively large computation modules, the RBR to two's complement conversion overhead gets amortized. In case of systems with high complexity, for iso-throughput, both the hybrid and RBR implementations are demonstrated to be superior with lower average energy consumption. For low complexity systems, the conversion overhead is significant, and overpowers the EDP performance gain obtained from the RBR computation operation.
ContributorsMahadevan, Rupa (Author) / Chakrabarti, Chaitali (Thesis advisor) / Kiaei, Sayfe (Committee member) / Cao, Yu (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in thesis addresses these points. I simulated the carrier densities, potentials, electric fields etc. of MOSFETs, BJTs and JFETs at and near the pinch-off regions to determine exactly what happens there. I also simulated the behavior of the quasi-Fermi levels. For MOSFETs, the channel thickness expands slightly before the pinch-off point and then spreads out quickly in a triangular shape and the space-charge region under the channel actually shrinks as the potential increases from source to drain. For BJTs, with collector-base junction reverse biased, most minority carriers diffuse through the base from emitter to collector very fast, but the minority carrier concentration at the collector-base space-charge region is not zero. For JFETs, the boundaries of the space-charge region are difficult to determine, the channel does not disappear after pinch off, the shape of channel is always tapered, and the carrier concentration in the channel decreases progressively. After simulating traditional sized devices, I also simulated typical nano-scaled devices and show that they behave similarly to large devices. These simulation results provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
ContributorsYang, Xuan (Author) / Schroder, Dieter K. (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
With increasing demand for System on Chip (SoC) and System in Package (SiP) design in computer and communication technologies, integrated inductor which is an essential passive component has been widely used in numerous integrated circuits (ICs) such as in voltage regulators and RF circuits. In this work, soft ferromagnetic core material, amorphous Co-Zr-Ta-B, was incorporated into on-chip and in-package inductors in order to scale down inductors and improve inductors performance in both inductance density and quality factor. With two layers of 500 nm Co-Zr-Ta-B films a 3.5X increase in inductance and a 3.9X increase in quality factor over inductors without magnetic films were measured at frequencies as high as 1 GHz. By laminating technology, up to 9.1X increase in inductance and more than 5X increase in quality factor (Q) were obtained from stripline inductors incorporated with 50 nm by 10 laminated films with a peak Q at 300 MHz. It was also demonstrated that this peak Q can be pushed towards high frequency as far as 1GHz by a combination of patterning magnetic films into fine bars and laminations. The role of magnetic vias in magnetic flux and eddy current control was investigated by both simulation and experiment using different patterning techniques and by altering the magnetic via width. Finger-shaped magnetic vias were designed and integrated into on-chip RF inductors improving the frequency of peak quality factor from 400 MHz to 800 MHz without sacrificing inductance enhancement. Eddy current and magnetic flux density in different areas of magnetic vias were analyzed by HFSS 3D EM simulation. With optimized magnetic vias, high frequency response of up to 2 GHz was achieved. Furthermore, the effect of applied magnetic field on on-chip inductors was investigated for high power applications. It was observed that as applied magnetic field along the hard axis (HA) increases, inductance maintains similar value initially at low fields, but decreases at larger fields until the magnetic films become saturated. The high frequency quality factor showed an opposite trend which is correlated to the reduction of ferromagnetic resonant absorption in the magnetic film. In addition, experiments showed that this field-dependent inductance change varied with different patterned magnetic film structures, including bars/slots and fingers structures. Magnetic properties of Co-Zr-Ta-B films on standard organic package substrates including ABF and polyimide were also characterized. Effects of substrate roughness and stress were analyzed and simulated which provide strategies for integrating Co-Zr-Ta-B into package inductors and improving inductors performance. Stripline and spiral inductors with Co-Zr-Ta-B films were fabricated on both ABF and polyimide substrates. Maximum 90% inductance increase in hundreds MHz frequency range were achieved in stripline inductors which are suitable for power delivery applications. Spiral inductors with Co-Zr-Ta-B films showed 18% inductance increase with quality factor of 4 at frequency up to 3 GHz.
ContributorsWu, Hao (Author) / Yu, Hongbin (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Cao, Yu (Committee member) / Chickamenahalli, Shamala (Committee member) / Arizona State University (Publisher)
Created2013
Description
Zinc oxide (ZnO), a naturally n-type semiconductor has been identified as a promising candidate to replace indium tin oxide (ITO) as the transparent electrode in solar cells, because of its wide bandgap (3.37 eV), abundant source materials and suitable refractive index (2.0 at 600 nm). Spray deposition is a convenient and low cost technique for large area and uniform deposition of semiconductor thin films. In particular, it provides an easier way to dope the film by simply adding the dopant precursor into the starting solution. In order to reduce the resistivity of undoped ZnO, many works have been done by doping in the ZnO with either group IIIA elements or VIIA elements using spray pyrolysis. However, the resistivity is still too high to meet TCO's resistivity requirement. In the present work, a novel co-spray deposition technique is developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e. the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with one cationic dopant, Al, Cr, or Fe, and an anionic dopant, F, have been successfully synthesized, in which F is incompatible with all these three cationic dopants. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, NH 4F. The second solution contained the Zn and one cationic dopant precursors, Zn(O 2CCH 3) 2 and AlCl 3, CrCl 3, or FeCl 3. The deposition was carried out at 500 °C; on soda-lime glass in air. Compared to singly-doped ZnO thin films, codoped ZnO samples showed better electrical properties. Besides, a minimum sheet resistance, 55.4 Ω/sq, was obtained for Al and F codoped ZnO films after vacuum annealing at 400 °C;, which was lower than singly-doped ZnO with either Al or F. The transmittance for the Al and F codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties.
ContributorsZhou, Bin (Author) / Tao, Meng (Thesis advisor) / Goryll, Michael (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2013
Description
In this work, we present approximate adders and multipliers to reduce data-path complexity of specialized hardware for various image processing systems. These approximate circuits have a lower area, latency and power consumption compared to their accurate counterparts and produce fairly accurate results. We build upon the work on approximate adders and multipliers presented in [23] and [24]. First, we show how choice of algorithm and parallel adder design can be used to implement 2D Discrete Cosine Transform (DCT) algorithm with good performance but low area. Our implementation of the 2D DCT has comparable PSNR performance with respect to the algorithm presented in [23] with ~35-50% reduction in area. Next, we use the approximate 2x2 multiplier presented in [24] to implement parallel approximate multipliers. We demonstrate that if some of the 2x2 multipliers in the design of the parallel multiplier are accurate, the accuracy of the multiplier improves significantly, especially when two large numbers are multiplied. We choose Gaussian FIR Filter and Fast Fourier Transform (FFT) algorithms to illustrate the efficacy of our proposed approximate multiplier. We show that application of the proposed approximate multiplier improves the PSNR performance of 32x32 FFT implementation by 4.7 dB compared to the implementation using the approximate multiplier described in [24]. We also implement a state-of-the-art image enlargement algorithm, namely Segment Adaptive Gradient Angle (SAGA) [29], in hardware. The algorithm is mapped to pipelined hardware blocks and we synthesized the design using 90 nm technology. We show that a 64x64 image can be processed in 496.48 µs when clocked at 100 MHz. The average PSNR performance of our implementation using accurate parallel adders and multipliers is 31.33 dB and that using approximate parallel adders and multipliers is 30.86 dB, when evaluated against the original image. The PSNR performance of both designs is comparable to the performance of the double precision floating point MATLAB implementation of the algorithm.
ContributorsVasudevan, Madhu (Author) / Chakrabarti, Chaitali (Thesis advisor) / Frakes, David (Committee member) / Gupta, Sandeep (Committee member) / Arizona State University (Publisher)
Created2013
Description
Structural integrity is an important characteristic of performance for critical components used in applications such as aeronautics, materials, construction and transportation. When appraising the structural integrity of these components, evaluation methods must be accurate. In addition to possessing capability to perform damage detection, the ability to monitor the level of damage over time can provide extremely useful information in assessing the operational worthiness of a structure and in determining whether the structure should be repaired or removed from service. In this work, a sequential Bayesian approach with active sensing is employed for monitoring crack growth within fatigue-loaded materials. The monitoring approach is based on predicting crack damage state dynamics and modeling crack length observations. Since fatigue loading of a structural component can change while in service, an interacting multiple model technique is employed to estimate probabilities of different loading modes and incorporate this information in the crack length estimation problem. For the observation model, features are obtained from regions of high signal energy in the time-frequency plane and modeled for each crack length damage condition. Although this observation model approach exhibits high classification accuracy, the resolution characteristics can change depending upon the extent of the damage. Therefore, several different transmission waveforms and receiver sensors are considered to create multiple modes for making observations of crack damage. Resolution characteristics of the different observation modes are assessed using a predicted mean squared error criterion and observations are obtained using the predicted, optimal observation modes based on these characteristics. Calculation of the predicted mean square error metric can be computationally intensive, especially if performed in real time, and an approximation method is proposed. With this approach, the real time computational burden is decreased significantly and the number of possible observation modes can be increased. Using sensor measurements from real experiments, the overall sequential Bayesian estimation approach, with the adaptive capability of varying the state dynamics and observation modes, is demonstrated for tracking crack damage.
ContributorsHuff, Daniel W (Author) / Papandreou-Suppappola, Antonia (Thesis advisor) / Kovvali, Narayan (Committee member) / Chakrabarti, Chaitali (Committee member) / Chattopadhyay, Aditi (Committee member) / Arizona State University (Publisher)
Created2013