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- All Subjects: Electrical Engineering
- Creators: Ogras, Umit Y.
Description
Thin film transistors (TFTs) are being used in a wide variety of applications such as image sensors, radiation detectors, as well as for use in liquid crystal displays. However, there is a conspicuous absence of interface electronics for bridging the gap between the flexible sensors and digitized displays. Hence is the need to build the same. In this thesis, the feasibility of building mixed analog circuits in TFTs are explored and demonstrated. A flexible CMOS op-amp is demonstrated using a-Si:H and pentacene TFTs. The achieved performance is ¡Ö 50 dB of DC open loop gain with unity gain frequency (UGF) of 7 kHz. The op-amp is built on the popular 2 stage topology with the 2nd stage being cascoded to provide sufficient gain. A novel biasing circuit was successfully developed modifying the gm biasing circuit to retard the performance degradation as the TFTs aged. A switched capacitor 7 bit DAC was developed in only nMOS topology using a-Si:H TFTs, based on charge sharing concept. The DAC achieved a maximum differential non-linearity (DNL) of 0.6 least significant bit (LSB), while the maximum integral non-linearity (INL) was 1 LSB. TFTs were used as switches in this architecture; as a result the performance was quite unchanged even as the TFTs degraded. A 5 bit fully flash ADC was also designed using all nMOS a-Si:H TFTs. Gray coding was implemented at the output to avoid errors due to comparator meta-stability. Finally a 5 bit current steering DAC was also built using all nMOS a-Si:H TFTs. However, due to process variation, the DNL was increased to 1.2 while the INL was about 1.8 LSB. Measurements were made on the external stress effects on zinc indium oxide (ZIO) TFTs. Electrically induced stresses were studied applying DC bias on the gate and drain. These stresses shifted the device characteristics like threshold voltage and mobility. The TFTs were then mechanically stressed by stretching them across cylindrical structures of various radii. Both the subthreshold swing and mobility underwent significant changes when the stress was tensile while the change was minor under compressive stress, applied parallel to channel length.
ContributorsDey, Aritra (Author) / Allee, David R. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Garrity, Douglas A (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence T (Committee member) / Arizona State University (Publisher)
Created2011
Description
A fully automated logic design methodology for radiation hardened by design (RHBD) high speed logic using fine grained triple modular redundancy (TMR) is presented. The hardening techniques used in the cell library are described and evaluated, with a focus on both layout techniques that mitigate total ionizing dose (TID) and latchup issues and flip-flop designs that mitigate single event transient (SET) and single event upset (SEU) issues. The base TMR self-correcting master-slave flip-flop is described and compared to more traditional hardening techniques. Additional refinements are presented, including testability features that disable the self-correction to allow detection of manufacturing defects. The circuit approach is validated for hardness using both heavy ion and proton broad beam testing. For synthesis and auto place and route, the methodology and circuits leverage commercial logic design automation tools. These tools are glued together with custom CAD tools designed to enable easy conversion of standard single redundant hardware description language (HDL) files into hardened TMR circuitry. The flow allows hardening of any synthesizable logic at clock frequencies comparable to unhardened designs and supports standard low-power techniques, e.g. clock gating and supply voltage scaling.
ContributorsHindman, Nathan (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2012
Description
Microprocessors are the processing heart of any digital system and are central to all the technological advancements of the age including space exploration and monitoring. The demands of space exploration require a special class of microprocessors called radiation hardened microprocessors which are less susceptible to radiation present outside the earth's atmosphere, in other words their functioning is not disrupted even in presence of disruptive radiation. The presence of these particles forces the designers to come up with design techniques at circuit and chip levels to alleviate the errors which can be encountered in the functioning of microprocessors. Microprocessor evolution has been very rapid in terms of performance but the same cannot be said about its rad-hard counterpart. With the total data processing capability overall increasing rapidly, the clear lack of performance of the processors manifests as a bottleneck in any processing system. To design high performance rad-hard microprocessors designers have to overcome difficult design problems at various design stages i.e. Architecture, Synthesis, Floorplanning, Optimization, routing and analysis all the while maintaining circuit radiation hardness. The reference design `HERMES' is targeted at 90nm IBM G process and is expected to reach 500Mhz which is twice as fast any processor currently available. Chapter 1 talks about the mechanisms of radiation effects which cause upsets and degradation to the functioning of digital circuits. Chapter 2 gives a brief description of the components which are used in the design and are part of the consistent efforts at ASUVLSI lab culminating in this chip level implementation of the design. Chapter 3 explains the basic digital design ASIC flow and the changes made to it leading to a rad-hard specific ASIC flow used in implementing this chip. Chapter 4 talks about the triple mode redundant (TMR) specific flow which is used in the block implementation, delineating the challenges faced and the solutions proposed to make the flow work. Chapter 5 explains the challenges faced and solutions arrived at while using the top-level flow described in chapter 3. Chapter 6 puts together the results and analyzes the design in terms of basic integrated circuit design constraints.
ContributorsRamamurthy, Chandarasekaran (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh J (Committee member) / Mayhew, David (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT The D flip flop acts as a sequencing element while designing any pipelined system. Radiation Hardening by Design (RHBD) allows hardened circuits to be fabricated on commercially available CMOS manufacturing process. Recently, single event transients (SET's) have become as important as single event upset (SEU) in radiation hardened high speed digital designs. A novel temporal pulse based RHBD flip-flop design is presented. Temporally delayed pulses produced by a radiation hardened pulse generator design samples the data in three redundant pulse latches. The proposed RHBD flip-flop has been statistically designed and fabricated on 90 nm TSMC LP process. Detailed simulations of the flip-flop operation in both normal and radiation environments are presented. Spatial separation of critical nodes for the physical design of the flip-flop is carried out for mitigating multi-node charge collection upsets. The proposed flip-flop is also used in commercial CAD flows for high performance chip designs. The proposed flip-flop is used in the design and auto-place-route (APR) of an advanced encryption system and the metrics analyzed.
ContributorsKumar, Sushil (Author) / Clark, Lawrence (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2014
Description
Switch mode DC/DC converters are suited for battery powered applications, due to their high efficiency, which help in conserving the battery lifetime. Fixed Frequency PWM based converters, which are generally used for these applications offer good voltage regulation, low ripple and excellent efficiency at high load currents. However at light load currents, fixed frequency PWM converters suffer from poor efficiencies The PFM control offers higher efficiency at light loads at the cost of a higher ripple. The PWM has a poor efficiency at light loads but good voltage ripple characteristics, due to a high switching frequency. To get the best of both control modes, both loops are used together with the control switched from one loop to another based on the load current. Such architectures are referred to as hybrid converters. While transition from PFM to PWM loop can be made by estimating the average load current, transition from PFM to PWM requires voltage or peak current sensing. This theses implements a hysteretic PFM solution for a synchronous buck converter with external MOSFET's, to achieve efficiencies of about 80% at light loads. As the PFM loop operates independently of the PWM loop, a transition circuit for automatically transitioning from PFM to PWM is implemented. The transition circuit is implemented digitally without needing any external voltage or current sensing circuit.
ContributorsVivek, Parasuram (Author) / Bakkaloglu, Bertan (Thesis advisor) / Ogras, Umit Y. (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2014
Description
The geometric growth in the integrated circuit technology due to transistor scaling also with system-on-chip design strategy, the complexity of the integrated circuit has increased manifold. Short time to market with high reliability and performance is one of the most competitive challenges. Both custom and ASIC design methodologies have evolved over the time to cope with this but the high manual labor in custom and statistic design in ASIC are still causes of concern. This work proposes a new circuit design strategy that focuses mostly on arrayed structures like TLB, RF, Cache, IPCAM etc. that reduces the manual effort to a great extent and also makes the design regular, repetitive still achieving high performance. The method proposes making the complete design custom schematic but using the standard cells. This requires adding some custom cells to the already exhaustive library to optimize the design for performance. Once schematic is finalized, the designer places these standard cells in a spreadsheet, placing closely the cells in the critical paths. A Perl script then generates Cadence Encounter compatible placement file. The design is then routed in Encounter. Since designer is the best judge of the circuit architecture, placement by the designer will allow achieve most optimal design. Several designs like IPCAM, issue logic, TLB, RF and Cache designs were carried out and the performance were compared against the fully custom and ASIC flow. The TLB, RF and Cache were the part of the HEMES microprocessor.
ContributorsMaurya, Satendra Kumar (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Vrudhula, Sarma (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2012
Description
Circuits on smaller technology nodes become more vulnerable to radiation-induced upset. Since this is a major problem for electronic circuits used in space applications, designers have a variety of solutions in hand. Radiation hardening by design (RHBD) is an approach, where electronic components are designed to work properly in certain radiation environments without the use of special fabrication processes. This work focuses on the cache design for a high performance microprocessor. The design tries to mitigate radiation effects like SEE, on a commercial foundry 45 nm SOI process. The design has been ported from a previously done cache design at the 90 nm process node. The cache design is a 16 KB, 4 way set associative, write-through design that uses a no-write allocate policy. The cache has been tested to write and read at above 2 GHz at VDD = 0.9 V. Interleaved layout, parity protection, dual redundancy, and checking circuits are used in the design to achieve radiation hardness. High speed is accomplished through the use of dynamic circuits and short wiring routes wherever possible. Gated clocks and optimized wire connections are used to reduce power. Structured methodology is used to build up the entire cache.
ContributorsXavier, Jerin (Author) / Clark, Lawrence T (Thesis advisor) / Cao, Yu (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2012
Description
Radiation hardening by design (RHBD) has become a necessary practice when creating circuits to operate within radiated environments. While employing RHBD techniques has tradeoffs between size, speed and power, novel designs help to minimize these penalties. Space radiation is the primary source of radiation errors in circuits and two types of single event effects, single event upsets (SEU), and single event transients (SET) are increasingly becoming a concern. While numerous methods currently exist to nullify SEUs and SETs, special consideration to the techniques of temporal hardening and interlocking are explored in this thesis. Temporal hardening mitigates both SETs and SEUs by spacing critical nodes through the use of delay elements, thus allowing collected charge to be removed. Interlocking creates redundant nodes to rectify charge collection on one single node. This thesis presents an innovative, temporally hardened D flip-flop (TFF). The TFF physical design is laid out in the 130 nm TSMC process in the form of an interleaved multi-bit cell and the circuitry necessary for the flip-flop to be hardened against SETs and SEUs is analyzed with simulations verifying these claims. Comparisons are made to an unhardened D flip-flop through speed, size, and power consumption depicting how the RHBD technique used increases all three over an unhardened flip-flop. Finally, the blocks from both the hardened and the unhardened flip-flops being placed in Synthesis and auto-place and route (APR) design flows are compared through size and speed to show the effects of using the high density multi-bit layout. Finally, the TFF presented in this thesis is compared to two other flip-flops, the majority voter temporal/DICE flip-flop (MTDFF) and the C-element temporal/DICE flip-flop (CTDFF). These circuits are built on the same 130 nm TSMC process as the TFF and then analyzed by the same methods through speed, size, and power consumption and compared to the TFF and unhardened flip-flops. Simulations are completed on the MTDFF and CTDFF to show their strengths against D node SETs and SEUs as well as their weakness against CLK node SETs. Results show that the TFF is faster and harder than both the MTDFF and CTDFF.
ContributorsMatush, Bradley (Author) / Clark, Lawrence T (Thesis advisor) / Allee, David (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2010
Description
Microelectronic circuits are prone to upsets in the natural and manmade radiation environments. As the scaling of these circuits continues, they have become more susceptible to these upsets. In highly scaled technologies even the terrestrial radiation environment is becoming increasing source of soft errors in integrated circuits. Simultaneously the means of protecting circuits via the process technology have become more and more limited. As a result, design techniques to mitigate the upsets are becoming a requirement in an ever-growing list of applications. This work begins with an overview of radiation effects in integrated circuits. The phenomenology of upsets is discussed along with their basic mechanisms. How these effects are quantified in microelectronic circuits is then presented along with a summary of simulation methods. This is followed with a survey of the state of the field for radiation hardening by design techniques and a selection of radiation hardened flip flop designs.
Upsets within these sequential circuits like flip flops can lead to process failure or erroneous execution and thus much of the radiation hardening effort is focused on protecting them. This work applies a systematic approach to radiation hardening by design to a temporally hardened flip flop and implements it in a 14nm finFET process.
Forty-nine delay circuits are analyzed and compared on multiple performance metrics before a down select for integration. The resultant flip flop circuit is shown to have a minimum critical charge 3x higher than the baseline library flip flop. Physical design of the flip flop is outlined and nine configurations consisting of three delay lengths and three levels if bit interleaving are accomplished. The circuits are integrated as shift registers in a radiation test chip and exposed to heavy ion testing.
Results of heavy ion testing demonstrate a threshold LET increase of approximately 6 MeV∙cm2/mg with marginal increases in saturation cross section for the target LET range. A failure mode is detected while storing ones, that has both area and time dependence. Substrate charge collection is suggested as a cause and a new circuit design is presented to mitigate the error with minimal performance impact.
ContributorsYoungSciortino, Clifford Samuel (Author) / Clark, Lawrence T (Thesis advisor) / Guertin, Steven M (Committee member) / Marinella, Matthew J (Committee member) / Arizona State University (Publisher)
Created2022
Description
Deep neural networks (DNNs), as a main-stream algorithm for various AI tasks, achieve higher accuracy at the cost of increased computational complexity and model size, posing great challenges to hardware platforms. This dissertation first tackles the design challenges of resistive random-access-memory (RRAM) based in-memory computing (IMC) architectures. A new metric, model stability from the loss landscape, is proposed to help shed light on accuracy under variations and model compression and guide a novel variation-aware training (VAT) solution. The proposed method effectively improves post-mapping accuracy of multiple datasets. Next, a hybrid RRAM/SRAM IMC DNN inference accelerator is developed, that integrates an RRAM-based IMC macro, a reconfigurable SRAM-based multiply-accumulate (MAC) macro, and a programmable shifter. The hybrid IMC accelerator fully recovers the inference accuracy post the mapping. Furthermore, this dissertation researches on architectural optimizations for high IMC utilization, low on-chip communication cost, and low energy-delay product (EDP), including on-chip interconnect design, PE array utilization, and tile-to-router mapping and scheduling. The optimal choice of on-chip interconnect results in up to 6x improvement in energy-delay-area product for RRAM IMC architectures. Furthermore, the PE and NoC optimizations show up to 62% improvement in PE utilization, 78% reduction in area, and 78% lower energy-area product for a wide range of modern DNNs. Finally, this dissertation proposes a novel chiplet-based IMC benchmarking simulator, SIAM, and a heterogeneous chiplet IMC architecture to address the limitations of a monolithic DNN accelerator. SIAM utilizes model-based and cycle-accurate simulation to provide a scalable and flexible architecture. SIAM is calibrated against a published silicon result, SIMBA, from Nvidia. The heterogeneous architecture utilizes a custom mapping with a bank of big and little chiplets, and a hybrid network-on-package (NoP) to optimize the utilization, interconnect bandwidth, and energy efficiency. The proposed big-little chiplet-based RRAM IMC architecture significantly improves energy efficiency at lower area, compared to conventional GPUs. In summary, this dissertation comprehensively investigates novel methods that encompass device, circuits, architecture, packaging, and algorithm to design scalable high-performance and energy-efficient IMC architectures.
ContributorsKrishnan, Gokul (Author) / Cao, Yu (Thesis advisor) / Seo, Jae-Sun (Committee member) / Chakrabarti, Chaitali (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2022