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Description
One of the challenges in future semiconductor device design is excessive rise of power dissipation and device temperatures. With the introduction of new geometrically confined device structures like SOI, FinFET, nanowires and continuous incorporation of new materials with poor thermal conductivities in the device active region, the device thermal problem is expected to become more challenging in coming years. This work examines the degradation in the ON-current due to self-heating effects in 10 nm channel length silicon nanowire transistors. As part of this dissertation, a 3D electrothermal device simulator is developed that self-consistently solves electron Boltzmann transport equation with 3D energy balance equations for both the acoustic and the optical phonons. This device simulator predicts temperature variations and other physical and electrical parameters across the device for different bias and boundary conditions. The simulation results show insignificant current degradation for nanowire self-heating because of pronounced velocity overshoot effect. In addition, this work explores the role of various placement of the source and drain contacts on the magnitude of self-heating effect in nanowire transistors. This work also investigates the simultaneous influence of self-heating and random charge effects on the magnitude of the ON current for both positively and negatively charged single charges. This research suggests that the self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing more carriers to go through, and (2) via the screening effect of the Coulomb potential. To examine the effect of temperature dependent thermal conductivity of thin silicon films in nanowire transistors, Selberherr's thermal conductivity model is used in the device simulator. The simulations results show larger current degradation because of self-heating due to decreased thermal conductivity . Crystallographic direction dependent thermal conductivity is also included in the device simulations. Larger degradation is observed in the current along the [100] direction when compared to the [110] direction which is in agreement with the values for the thermal conductivity tensor provided by Zlatan Aksamija.
ContributorsHossain, Arif (Author) / Vasileska, Dragica (Thesis advisor) / Ahmed, Shaikh (Committee member) / Bakkaloglu, Bertan (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
As existing solar cell technologies come closer to their theoretical efficiency, new concepts that overcome the Shockley-Queisser limit and exceed 50% efficiency need to be explored. New materials systems are often investigated to achieve this, but the use of existing solar cell materials in advanced concept approaches is compelling for multiple theoretical and practical reasons. In order to include advanced concept approaches into existing materials, nanostructures are used as they alter the physical properties of these materials. To explore advanced nanostructured concepts with existing materials such as III-V alloys, silicon and/or silicon/germanium and associated alloys, fundamental aspects of using these materials in advanced concept nanostructured solar cells must be understood. Chief among these is the determination and predication of optimum electronic band structures, including effects such as strain on the band structure, and the material's opto-electronic properties. Nanostructures have a large impact on band structure and electronic properties through quantum confinement. An additional large effect is the change in band structure due to elastic strain caused by lattice mismatch between the barrier and nanostructured (usually self-assembled QDs) materials. To develop a material model for advanced concept solar cells, the band structure is calculated for single as well as vertical array of quantum dots with the realistic effects such as strain, associated with the epitaxial growth of these materials. The results show significant effect of strain in band structure. More importantly, the band diagram of a vertical array of QDs with different spacer layer thickness show significant change in band offsets, especially for heavy and light hole valence bands when the spacer layer thickness is reduced. These results, ultimately, have significance to develop a material model for advance concept solar cells that use the QD nanostructures as absorbing medium. The band structure calculations serve as the basis for multiple other calculations. Chief among these is that the model allows the design of a practical QD advanced concept solar cell, which meets key design criteria such as a negligible valence band offset between the QD/barrier materials and close to optimum band gaps, resulting in the predication of optimum material combinations.
ContributorsDahal, Som Nath (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / Roedel, Ronald (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2011
Description
A proposed visible spectrum nanoscale imaging method requires material with permittivity values much larger than those available in real world materials to shrink the visible wavelength to attain the desired resolution. It has been proposed that the extraordinarily slow propagation experienced by light guided along plasmon resonant structures is a viable approach to obtaining these short wavelengths. To assess the feasibility of such a system, an effective medium model of a chain of Noble metal plasmonic nanospheres is developed, leading to a straightforward calculation of the waveguiding properties. Evaluation of other models for such structures that have appeared in the literature, including an eigenvalue problem nearest neighbor approximation, a multi- neighbor approximation with retardation, and a method-of-moments method for a finite chain, show conflicting expectations of such a structure. In particular, recent publications suggest the possibility of regions of invalidity for eigenvalue problem solutions that are considered far below the onset of guidance, and for solutions that assume the loss is low enough to justify perturbation approximations. Even the published method-of-moments approach suffers from an unjustified assumption in the original interpretation, leading to overly optimistic estimations of the attenuation of the plasmon guided wave. In this work it is shown that the method of moments approach solution was dominated by the radiation from the source dipole, and not the waveguiding behavior claimed. If this dipolar radiation is removed the remaining fields ought to contain the desired guided wave information. Using a Prony's-method-based algorithm the dispersion properties of the chain of spheres are assessed at two frequencies, and shown to be dramatically different from the optimistic expectations in much of the literature. A reliable alternative to these models is to replace the chain of spheres with an effective medium model, thus mapping the chain problem into the well-known problem of the dielectric rod. The solution of the Green function problem for excitation of the symmetric longitudinal mode (TM01) is performed by numerical integration. Using this method the frequency ranges over which the rod guides and the associated attenuation are clearly seen. The effective medium model readily allows for variation of the sphere size and separation, and can be taken to the limit where instead of a chain of spheres we have a solid Noble metal rod. This latter case turns out to be the optimal for minimizing the attenuation of the guided wave. Future work is proposed to simulate the chain of photonic nanospheres and the nanowire using finite-difference time-domain to verify observed guided behavior in the Green's function method devised in this thesis and to simulate the proposed nanosensing devices.
ContributorsHale, Paul (Author) / Diaz, Rodolfo E (Thesis advisor) / Goodnick, Stephen (Committee member) / Aberle, James T., 1961- (Committee member) / Palais, Joseph (Committee member) / Arizona State University (Publisher)
Created2013
Description
GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development. There is a need to understand device operation by developing a model which could be used to optimize electrical and thermal characteristics of GaN HEMT design for high power and high frequency operation. In this thesis work a physical simulation model of AlGaN/GaN HEMT is developed using commercially available software ATLAS from SILVACO Int. based on the energy balance/hydrodynamic carrier transport equations. The model is calibrated against experimental data. Transfer and output characteristics are the key focus in the analysis along with saturation drain current. The resultant IV curves showed a close correspondence with experimental results. Various combinations of electron mobility, velocity saturation, momentum and energy relaxation times and gate work functions were attempted to improve IV curve correlation. Thermal effects were also investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of GaN HEMTs. The temperature profiles across the device were observed. Hot spots were found along the channel in the gate-drain spacing. These preliminary results indicate that the thermal effects do have an impact on the electrical device characteristics at large biases even though the amount of self-heating is underestimated with respect to thermal particle-based simulations that solve the energy balance equations for acoustic and optical phonons as well (thus take proper account of the formation of the hot-spot). The decrease in drain current is due to decrease in saturation carrier velocity. The necessity of including hydrodynamic/energy balance transport models for accurate simulations is demonstrated. Possible ways for improving model accuracy are discussed in conjunction with future research.
ContributorsChowdhury, Towhid (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon. One scattering table is needed for conventional silicon, whereas, because of the strain breaking the symmetry of the system, three scattering tables are needed for modeling strained silicon material. Simulation results for the average drift velocity and the average electron energy are in close agreement with published data. A Monte Carlo device simulation tool has also been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator devices. The effects of different types of materials for buried oxide layers have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness have also been investigated. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.
ContributorsQazi, Suleman (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Tao, Meng (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT An Ensemble Monte Carlo (EMC) computer code has been developed to simulate, semi-classically, spin-dependent electron transport in quasi two-dimensional (2D) III-V semiconductors. The code accounts for both three-dimensional (3D) and quasi-2D transport, utilizing either 3D or 2D scattering mechanisms, as appropriate. Phonon, alloy, interface roughness, and impurity scattering mechanisms are included, accounting for the Pauli Exclusion Principle via a rejection algorithm. The 2D carrier states are calculated via a self-consistent 1D Schrödinger-3D-Poisson solution in which the charge distribution of the 2D carriers in the quantization direction is taken as the spatial distribution of the squared envelope functions within the Hartree approximation. The wavefunctions, subband energies, and 2D scattering rates are updated periodically by solving a series of 1D Schrödinger wave equations (SWE) over the real-space domain of the device at fixed time intervals. The electrostatic potential is updated by periodically solving the 3D Poisson equation. Spin-polarized transport is modeled via a spin density-matrix formalism that accounts for D'yakanov-Perel (DP) scattering. Also, the code allows for the easy inclusion of additional scattering mechanisms and structural modifications to devices. As an application of the simulator, the current voltage characteristics of an InGaAs/InAlAs HEMT are simulated, corresponding to nanoscale III-V HEMTs currently being fabricated by Intel Corporation. The comparative effects of various scattering parameters, material properties and structural attributes are investigated and compared with experiments where reasonable agreement is obtained. The spatial evolution of spin-polarized carriers in prototypical Spin Field Effect Transistor (SpinFET) devices is then simulated. Studies of the spin coherence times in quasi-2D structures is first investigated and compared to experimental results. It is found that the simulated spin coherence times for GaAs structures are in reasonable agreement with experiment. The SpinFET structure studied is a scaled-down version of the InGaAs/InAlAs HEMT discussed in this work, in which spin-polarized carriers are injected at the source, and the coherence length is studied as a function of gate voltage via the Rashba effect.
ContributorsTierney, Brian David (Author) / Goodnick, Stephen (Thesis advisor) / Ferry, David (Committee member) / Akis, Richard (Committee member) / Saraniti, Marco (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
The project described here is a solar powered intrusion detection system consisting of three modules: a battery recharging circuit, a laser emitter and photodetector pair, and a Wi- Fi connectivity board. Over the preceding seven months, great care has been taken for the design and construction of this system. The first three months were spent researching and selecting suitable IC's and external components (e.g. solar panel, batteries, etc.). Then, the next couple of months were spent ordering specific materials and equipment for the construction of our prototype. Finally, the last two months were used to build a working prototype, with a substantial amount of time used for perfecting our system's packaging and operation. This report will consist of a detailed discussion of our team's research, design activities, prototype implementation, final budget, and final schedule. Technical discussion of the concepts behind our design will assist with understanding the design activities and prototype implementation sections that will follow. Due to the generous funding of the group from the Barrett Honors College, our overall budget available for the project was $1600. Of that amount, only $334.51 was spent on the actual system components, with $829.42 being spent on the equipment and materials needed for the testing and construction of the prototype. As far as the schedule goes, we are essentially done with the project. The only tasks left to finish are a successful defense of the project at the oral presentation on Friday, 29 March 2013, followed by a successful demo on 26 April 2013.
ContributorsTroyer, Nicole L. (Co-author) / Shtayer, Idan (Co-author) / Guise, Chris (Co-author) / Kozicki, Michael (Thesis director) / Roedel, Ronald (Committee member) / Goodnick, Stephen (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2013-05
Description
Implantable medical device technology is commonly used by doctors for disease management, aiding to improve patient quality of life. However, it is possible for these devices to be exposed to ionizing radiation during various medical therapeutic and diagnostic activities while implanted. This commands that these devices remain fully operational during, and long after, radiation exposure. Many implantable medical devices employ standard commercial complementary metal-oxide-semiconductor (CMOS) processes for integrated circuit (IC) development, which have been shown to degrade with radiation exposure. This necessitates that device manufacturers study the effects of ionizing radiation on their products, and work to mitigate those effects to maintain a high standard of reliability. Mitigation can be completed through targeted radiation hardening by design (RHBD) techniques as not to infringe on the device operational specifications. This thesis details a complete radiation analysis methodology that can be implemented to examine the effects of ionizing radiation on an IC as part of RHBD efforts. The methodology is put into practice to determine the failure mechanism in a charge pump circuit, common in many of today's implantable pacemaker designs, as a case study. Charge pump irradiation data shows a reduction of circuit output voltage with applied dose. Through testing of individual test devices, the response is identified as parasitic inter-device leakage caused by trapped oxide charge buildup in the isolation oxides. A library of compact models is generated to represent isolation oxide parasitics based on test structure data along with 2-Dimensional structure simulation results. The original charge pump schematic is then back-annotated with transistors representative of the parasitic. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit, accounting for possible parasitic devices activated by radiation exposure. By selecting a compact model for the parasitics generated at a specific dose, the compete circuit response is then simulated at the defined dose. The reduction of circuit output voltage with dose is then re-created in a radiation-enabled simulation validating the analysis methodology.
ContributorsSchlenvogt, Garrett (Author) / Barnaby, Hugh J (Thesis advisor) / Goodnick, Stephen (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2010
Description
The research of alternative materials and new device architectures to exceed the limits of conventional silicon-based devices has been sparked by the persistent pursuit of semiconductor technology scaling. The development of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2), well-known member of the transition metal dichalcogenide (TMD) family, has made great strides towards ultrascaled two-dimensional (2D) field-effect-transistors (FETs). The scaling issues facing silicon-based complementary metal-oxide-semiconductor (CMOS) technologies can be solved by 2D FETs, which show extraordinary potential.This dissertation provides a comprehensive experimental analysis relating to improvements in p-type metal-oxide-semiconductor (PMOS) FETs with few-layer WSe2 and high-κ metal gate (HKMG) stacks. Compared to this works improved methods, standard metallization (more damaging to underlying channel) results in significant Fermi-level pinning, although Schottky barrier heights remain small (< 100 meV) when using high work function metals. Temperature-dependent analysis reveals a dominant contribution to contact resistance from the damaged channel access region. Thus, through less damaging metallization methods combined with strongly scaled HKMG stacks significant improvements were achieved in contact resistance and PMOS FET overall performance. A clean contact/channel interface was achieved through high-vacuum evaporation and temperature-controlled stepped deposition. Theoretical analysis using a Landauer transport adapted to WSe2 Schottky barrier FETs (SB-FETs) elucidates the prospects of nanoscale 2D PMOS FETs indicating high-performance towards the ultimate CMOS scaling limit.
Next, this dissertation discusses how device electrical characteristics are affected by scaling of equivalent oxide thickness (EOT) and by adopting double-gate FET architectures, as well as how this might support CMOS scaling. An improved gate control over the channel is made possible by scaling EOT, improving on-off current ratios, carrier mobility, and subthreshold swing. This study also elucidates the impact of EOT scaling on FET gate hysteresis attributed to charge-trapping effects in high-κ-dielectrics prepared by atomic layer deposition (ALD). These developments in 2D FETs offer a compelling alternative to conventional silicon-based devices and a path for continued transistor scaling. This research contributes to ongoing efforts in 2D materials for future semiconductor technologies. Finally, this work introduces devices based on emerging Janus TMDs and bismuth oxyselenide (Bi2O2Se) layered semiconductors.
ContributorsPatoary, Md Naim Hossain (Author) / Sanchez Esqueda, Ivan (Thesis advisor) / Tongay, Sefaattin (Committee member) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2023