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Description
An efficient thermal solver is available in the CMC that allows modeling self-heating in the electrical simulations, which treats phonons as flux and solves the energy balance equation to quantify thermal effects. Using this solver, thermal simulations were performed on GaN-HEMTs in order to test effect of gate architectures on

An efficient thermal solver is available in the CMC that allows modeling self-heating in the electrical simulations, which treats phonons as flux and solves the energy balance equation to quantify thermal effects. Using this solver, thermal simulations were performed on GaN-HEMTs in order to test effect of gate architectures on the DC and RF performance of the device. A Π- gate geometry is found to suppress 19.75% more hot electrons corresponding to a DC power of 2.493 W/mm for Vgs = -0.6V (max transconductance) with respect to the initial T-gate. For the DC performance, the output current, Ids is nearly same for each device configuration over the entire bias range. For the RF performance, the current gain was evaluated over a frequency range 20 GHz to 120 GHz in each device for both thermal (including self-heating) and isothermal (without self-heating). The evaluated cutoff frequency is around 7% lower for the thermal case than the isothermal case. The simulated cutoff frequency closely follows the experimental cutoff frequency. The work was extended to the study of ultra-wide bandgap material (Diamond), where isotope effect causes major deterioration in thermal conductivity. In this case, bulk phonons are modeled as semiclassical particles solving the nonlinear Peierls - Boltzmann transport equation with a stochastic approach. Simulations were performed for 0.001% (ultra-pure), 0.1% and 1.07% isotope concentration (13C) of diamond, showing good agreement with the experimental values. Further investigation was performed on the effect of isotope on the dynamics of individual phonon branches, thermal conductivity and the mean free path, to identify the dominant phonon branch. Acoustic phonons are found to be the principal contributors to thermal conductivity across all isotope concentrations with transverse acoustic (TA2) branch is the dominant branch with a contribution of 40% at room temperature and 37% at 500K. Mean free path computations show the lower bound of device dimensions in order to obtain maximum thermal conductivity. At 300K, the lowest mean free path (which is attributed to Longitudinal Optical phonon) reduces from 24nm to 8 nm for isotope concentration of 0.001% and 1.07% respectively. Similarly, the maximum mean free path (which is attributed to Longitudinal Acoustic phonon) reduces from 4 µm to 3.1 µm, respectively, for the same isotope concentrations. Furthermore, PETSc (Portable, Extensible Toolkit for Scientific Computation) developed by Argonne National Lab, was included in the existing Cellular Monte Carlo device simulator as a Poisson solver to further extend the capability of the simulator. The validity of the solver was tested performing 2D and 3D simulations and the results were compared with the well-established multigrid Poisson solver.
ContributorsAcharjee, Joy (Author) / Saraniti, Marco (Thesis advisor) / Goodnick, Stephen (Committee member) / Thornton, Trevor (Committee member) / Wang, Robert (Committee member) / Arizona State University (Publisher)
Created2024
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Description
When air is supplied to a conditioned space, the temperature and humidity of the air often contribute to the comfort and health of the occupants within the space. However, the vapor compression system, which is the standard air conditioning configuration, requires air to reach the dew point for dehumidification to

When air is supplied to a conditioned space, the temperature and humidity of the air often contribute to the comfort and health of the occupants within the space. However, the vapor compression system, which is the standard air conditioning configuration, requires air to reach the dew point for dehumidification to occur, which can decrease system efficiency and longevity in low temperature applications.

To improve performance, some systems dehumidify the air before cooling. One common dehumidifier is the desiccant wheel, in which solid desiccant absorbs moisture out of the air while rotating through circular housing. This system improves performance, especially when the desiccant is regenerated with waste or solar heat; however, the heat of regeneration is very large, as the water absorbed during dehumidification must be evaporated. N-isopropylacrylamide (NIPAAm), a sorbent that oozes water when raised above a certain temperature, could potentially replace traditional desiccants in dehumidifiers. The heat of regeneration for NIPAAm consists of some sensible heat to bring the sorbent to the regeneration temperature, plus some latent heat to offset any liquid water that is evaporated as it is exuded from the NIPAAm. This means the NIPAAm regeneration heat has the potential to be much lower than that of a traditional desiccant.

Models were created for a standard vapor compression air conditioning system, two desiccant systems, and two theoretical NIPAAm systems. All components were modeled for simplified steady state operation. For a moderate percent of water evaporated during regeneration, it was found that the NIPAAm systems perform better than standard vapor compression. When compared to the desiccant systems, the NIPAAm systems performed better at almost all percent evaporation values. The regeneration heat was modeled as if supplied by an electric heater. If a cheaper heat source were utilized, the case for NIPAAm would be even stronger.

Future work on NIPAAm dehumidification should focus on lowering the percent evaporation from the 67% value found in literature. Additionally, the NIPAAm cannot exceed the lower critical solution temperature during dehumidification, indicating that a NIPAAm dehumidification system should be carefully designed such that the sorbent temperature is kept sufficiently low during dehumidification.
ContributorsKocher, Jordan Daniel (Author) / Wang, Robert (Thesis advisor) / Phelan, Patrick (Committee member) / Parrish, Kristen (Committee member) / Arizona State University (Publisher)
Created2019
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Description
A novel Monte Carlo rejection technique for solving the phonon and electron

Boltzmann Transport Equation (BTE), including full many-particle interactions, is

presented in this work. This technique has been developed to explicitly model

population-dependent scattering within the full-band Cellular Monte Carlo (CMC)

framework to simulate electro-thermal transport in semiconductors, while ensuring

the conservation of energy

A novel Monte Carlo rejection technique for solving the phonon and electron

Boltzmann Transport Equation (BTE), including full many-particle interactions, is

presented in this work. This technique has been developed to explicitly model

population-dependent scattering within the full-band Cellular Monte Carlo (CMC)

framework to simulate electro-thermal transport in semiconductors, while ensuring

the conservation of energy and momentum for each scattering event. The scattering

algorithm directly solves the many-body problem accounting for the instantaneous

distribution of the phonons. The general approach presented is capable of simulating

any non-equilibrium phase-space distribution of phonons using the full phonon dispersion

without the need of the approximations commonly used in previous Monte Carlo

simulations. In particular, anharmonic interactions require no assumptions regarding

the dominant modes responsible for anharmonic decay, while Normal and Umklapp

scattering are treated on the same footing.

This work discusses details of the algorithmic implementation of the three particle

scattering for the treatment of the anharmonic interactions between phonons, as well

as treating isotope and impurity scattering within the same framework. The approach

is then extended with a technique based on the multivariable Hawkes point process

that has been developed to model the emission and the absorption process of phonons

by electrons.

The simulation code was validated by comparison with both analytical, numerical,

and experimental results; in particular, simulation results show close agreement with

a wide range of experimental data such as the thermal conductivity as function of the

isotopic composition, the temperature and the thin-film thickness.
ContributorsSabatti, Flavio Francesco Maria (Author) / Saraniti, Marco (Thesis advisor) / Smith, David J. (Committee member) / Wang, Robert (Committee member) / Goodnick, Stephen M (Committee member) / Arizona State University (Publisher)
Created2018
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Description
A model of self-heating is incorporated into a Cellular Monte Carlo (CMC) particle-based device simulator through the solution of an energy balance equation (EBE) for phonons. The EBE self-consistently couples charge and heat transport in the simulation through a novel approach to computing the heat generation rate in

A model of self-heating is incorporated into a Cellular Monte Carlo (CMC) particle-based device simulator through the solution of an energy balance equation (EBE) for phonons. The EBE self-consistently couples charge and heat transport in the simulation through a novel approach to computing the heat generation rate in the device under study. First, the moments of the Boltzmann Transport equation (BTE) are discussed, and subsequently the EBE of for phonons is derived. Subsequently, several tests are performed to verify the applicability and accuracy of a nonlinear iterative method for the solution of the EBE in the presence of convective boundary conditions, as compared to a finite element analysis solver as well as using the Kirchhoff transformation. The coupled electrothermal characterization of a GaN/AlGaN high electron mobility transistor (HEMT) is then performed, and the effects of non-ideal interfaces and boundary conditions are studied.



The proposed thermal model is then applied to a novel $\Pi$-gate architecture which has been suggested to reduce hot electron generation in the device, compared to the conventional T-gate. Additionally, small signal ac simulations are performed for the determination of cutoff frequencies using the thermal model as well.

Finally, further extensions of the CMC algorithm used in this work are discussed, including 1) higher-order moments of the phonon BTE, 2) coupling to phonon Monte Carlo simulations, and 3) application to other large-bandgap, and therefore high-power, materials such as diamond.
ContributorsMerrill, Ky (Author) / Saraniti, Marco (Thesis advisor) / Goodnick, Stephen (Committee member) / Smith, David (Committee member) / Wang, Robert (Committee member) / Arizona State University (Publisher)
Created2020