Matching Items (61)
Filtering by
- All Subjects: Electrical Engineering
- Creators: Yu, Hongbin
Description
The detection and segmentation of objects appearing in a natural scene, often referred to as Object Detection, has gained a lot of interest in the computer vision field. Although most existing object detectors aim to detect all the objects in a given scene, it is important to evaluate whether these methods are capable of detecting the salient objects in the scene when constraining the number of proposals that can be generated due to constraints on timing or computations during execution. Salient objects are objects that tend to be more fixated by human subjects. The detection of salient objects is important in applications such as image collection browsing, image display on small devices, and perceptual compression.
This thesis proposes a novel evaluation framework that analyses the performance of popular existing object proposal generators in detecting the most salient objects. This work also shows that, by incorporating saliency constraints, the number of generated object proposals and thus the computational cost can be decreased significantly for a target true positive detection rate (TPR).
As part of the proposed framework, salient ground-truth masks are generated from the given original ground-truth masks for a given dataset. Given an object detection dataset, this work constructs salient object location ground-truth data, referred to here as salient ground-truth data for short, that only denotes the locations of salient objects. This is obtained by first computing a saliency map for the input image and then using it to assign a saliency score to each object in the image. Objects whose saliency scores are sufficiently high are referred to as salient objects. The detection rates are analyzed for existing object proposal generators with respect to the original ground-truth masks and the generated salient ground-truth masks.
As part of this work, a salient object detection database with salient ground-truth masks was constructed from the PASCAL VOC 2007 dataset. Not only does this dataset aid in analyzing the performance of existing object detectors for salient object detection, but it also helps in the development of new object detection methods and evaluating their performance in terms of successful detection of salient objects.
This thesis proposes a novel evaluation framework that analyses the performance of popular existing object proposal generators in detecting the most salient objects. This work also shows that, by incorporating saliency constraints, the number of generated object proposals and thus the computational cost can be decreased significantly for a target true positive detection rate (TPR).
As part of the proposed framework, salient ground-truth masks are generated from the given original ground-truth masks for a given dataset. Given an object detection dataset, this work constructs salient object location ground-truth data, referred to here as salient ground-truth data for short, that only denotes the locations of salient objects. This is obtained by first computing a saliency map for the input image and then using it to assign a saliency score to each object in the image. Objects whose saliency scores are sufficiently high are referred to as salient objects. The detection rates are analyzed for existing object proposal generators with respect to the original ground-truth masks and the generated salient ground-truth masks.
As part of this work, a salient object detection database with salient ground-truth masks was constructed from the PASCAL VOC 2007 dataset. Not only does this dataset aid in analyzing the performance of existing object detectors for salient object detection, but it also helps in the development of new object detection methods and evaluating their performance in terms of successful detection of salient objects.
ContributorsKotamraju, Sai Prajwal (Author) / Karam, Lina J (Thesis advisor) / Yu, Hongbin (Committee member) / Jayasuriya, Suren (Committee member) / Arizona State University (Publisher)
Created2019
Description
Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si. Efficient GaN based light-emitting diodes (LEDs) have increasingly displaced incandescent and fluorescent bulbs as the new major light sources for lighting and display. In addition, due to their large bandgap and high critical electrical field, WBG semiconductors are also ideal candidates for efficient power conversion.
In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.
In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.
In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
ContributorsFu, Houqiang (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Yu, Hongbin (Committee member) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2019
Description
In this dissertation, I described my research on the growth and characterization of various nanostructures, such as nanowires, nanobelts and nanosheets, of different semiconductors in a Chemical Vapor Deposition (CVD) system.
In the first part of my research, I selected chalcogenides (such as CdS and CdSe) for a comprehensive study in growing two-segment axial nanowires and radial nanobelts/sheets using the ternary CdSxSe1-x alloys. I demonstrated simultaneous red (from CdSe-rich) and green (from CdS-rich) light emission from a single monolithic heterostructure with a maximum wavelength separation of 160 nm. I also demonstrated the first simultaneous two-color lasing from a single nanosheet heterostructure with a wavelength separation of 91 nm under sufficiently strong pumping power.
In the second part, I considered several combinations of source materials with different growth methods in order to extend the spectral coverage of previously demonstrated structures towards shorter wavelengths to achieve full-color emissions. I achieved this with the growth of multisegment heterostructure nanosheets (MSHNs), using ZnS and CdSe chalcogenides, via our novel growth method. By utilizing this method, I demonstrated the first growth of ZnCdSSe MSHNs with an overall lattice mismatch of 6.6%, emitting red, green and blue light simultaneously, in a single furnace run using a simple CVD system. The key to this growth method is the dual ion exchange process which converts nanosheets rich in CdSe to nanosheets rich in ZnS, demonstrated for the first time in this work. Tri-chromatic white light emission with different correlated color temperature values was achieved under different growth conditions. We demonstrated multicolor (191 nm total wavelength separation) laser from a single monolithic semiconductor nanostructure for the first time. Due to the difficulties associated with growing semiconductor materials of differing composition on a given substrate using traditional planar epitaxial technology, our nanostructures and growth method are very promising for various device applications, including but not limited to: illumination, multicolor displays, photodetectors, spectrometers and monolithic multicolor lasers.
In the first part of my research, I selected chalcogenides (such as CdS and CdSe) for a comprehensive study in growing two-segment axial nanowires and radial nanobelts/sheets using the ternary CdSxSe1-x alloys. I demonstrated simultaneous red (from CdSe-rich) and green (from CdS-rich) light emission from a single monolithic heterostructure with a maximum wavelength separation of 160 nm. I also demonstrated the first simultaneous two-color lasing from a single nanosheet heterostructure with a wavelength separation of 91 nm under sufficiently strong pumping power.
In the second part, I considered several combinations of source materials with different growth methods in order to extend the spectral coverage of previously demonstrated structures towards shorter wavelengths to achieve full-color emissions. I achieved this with the growth of multisegment heterostructure nanosheets (MSHNs), using ZnS and CdSe chalcogenides, via our novel growth method. By utilizing this method, I demonstrated the first growth of ZnCdSSe MSHNs with an overall lattice mismatch of 6.6%, emitting red, green and blue light simultaneously, in a single furnace run using a simple CVD system. The key to this growth method is the dual ion exchange process which converts nanosheets rich in CdSe to nanosheets rich in ZnS, demonstrated for the first time in this work. Tri-chromatic white light emission with different correlated color temperature values was achieved under different growth conditions. We demonstrated multicolor (191 nm total wavelength separation) laser from a single monolithic semiconductor nanostructure for the first time. Due to the difficulties associated with growing semiconductor materials of differing composition on a given substrate using traditional planar epitaxial technology, our nanostructures and growth method are very promising for various device applications, including but not limited to: illumination, multicolor displays, photodetectors, spectrometers and monolithic multicolor lasers.
ContributorsTurkdogan, Sunay (Author) / Ning, Cun Zheng (Thesis advisor) / Palais, Joseph C. (Committee member) / Yu, Hongbin (Committee member) / Mardinly, A. John (Committee member) / Arizona State University (Publisher)
Created2015
Description
Soft magnetic materials have been studied extensively in the recent past due to their applications in micro-transformers, micro-inductors, spin dependent memories etc. The unique features of these materials are the high frequency operability and high magnetic anisotropy. High uniaxial anisotropy is one of the most important properties for these materials. There are many methods to achieve high anisotropy energy (Hk) which include sputtering with presence of magnetic field, exchange bias and oblique angle sputtering.
This research project focuses on analyzing different growth techniques of thin films of Cobalt, Zirconium Tantalum Boron (CZTB) and the quality of the films resulted. The measurements include magnetic moment measurements using a Vibrating Sample Magnetometer, electrical measurements using 4 point resistivity methods and structural characterization using Scanning Electron Microscopy. Subtle changes in the growth mechanism result in different properties of these films and they are most suited for certain applications.
The growth methods presented in this research are oblique angled sputtering with localized magnetic field and oblique sputtering without presence of magnetic field. The uniaxial anisotropy can be controlled by changing the angle during sputtering. The resulting film of CZTB is tested for magnetic anisotropy and soft magnetism at room temperature by using Lakeshore 7500 Vibrating Sample Magnetometer. The results are presented, analyzed and explained using characterization techniques. Future work includes magnetic field presence during deposition, magnetic devices of this film with giga hertz range operating frequencies.
This research project focuses on analyzing different growth techniques of thin films of Cobalt, Zirconium Tantalum Boron (CZTB) and the quality of the films resulted. The measurements include magnetic moment measurements using a Vibrating Sample Magnetometer, electrical measurements using 4 point resistivity methods and structural characterization using Scanning Electron Microscopy. Subtle changes in the growth mechanism result in different properties of these films and they are most suited for certain applications.
The growth methods presented in this research are oblique angled sputtering with localized magnetic field and oblique sputtering without presence of magnetic field. The uniaxial anisotropy can be controlled by changing the angle during sputtering. The resulting film of CZTB is tested for magnetic anisotropy and soft magnetism at room temperature by using Lakeshore 7500 Vibrating Sample Magnetometer. The results are presented, analyzed and explained using characterization techniques. Future work includes magnetic field presence during deposition, magnetic devices of this film with giga hertz range operating frequencies.
ContributorsTummalapalli, Sridutt (Author) / Yu, Hongbin (Thesis advisor) / Jiang, Hanqing (Committee member) / Yu, Shimeng (Committee member) / Arizona State University (Publisher)
Created2015
Description
Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.
ContributorsKao, Wei-Chieh (Author) / Goryll, Michael (Thesis advisor) / Chowdhury, Srabanti (Committee member) / Yu, Hongbin (Committee member) / Marinella, Matthew (Committee member) / Arizona State University (Publisher)
Created2015
Description
Solid-state nanopore research, used in the field of biomolecule detection and separation, has developed rapidly during the last decade. An electric field generated from the nanopore membrane to the aperture surface by a bias voltage can be used to electrostatically control the transport of charges. This results in ionic current rectification that can be used for applications such as biomolecule filtration and DNA sequencing.
In this doctoral research, a voltage bias was applied on the device silicon layer of Silicon-on-Insulator (SOI) cylindrical single nanopore to analyze how the perpendicular gate electrical field affected the ionic current through the pore. The nanopore was fabricated using electron beam lithography (EBL) and reactive ion etching (RIE) which are standard CMOS processes and can be integrated into any electronic circuit with massive production. The long cylindrical pore shape provides a larger surface area inside the aperture compared to other nanopores whose surface charge is of vital importance to ion transport.
Ionic transport through the nanopore was characterized by measuring the ionic conductance of the nanopore in aqueous hydrochloric acid and potassium chloride solutions under field effect modulation. The nanopores were separately coated with negatively charged thermal silicon oxide and positively charged aluminum oxide using Atomic Layer Deposition. Both layers worked as electrical insulation layers preventing leakage current once the substrate bias was applied. Different surface charges also provided different counterion-coion configurations. The transverse conductance of the nanopore at low electrolyte concentrations (<10-4 M) changed with voltage bias when the Debye length was comparable to the dimensions of the nanopore.
Ionic transport through nanopores coated with polyelectrolyte (PE) brushes were also investigated in ionic solutions with various pH values using Electrochemical Impedance spectroscopy (EIS). The pH sensitive poly[2–(dimethylamino) ethyl methacrylate] (PDMAEMA) PE brushes were integrated on the inner walls as well as the surface of the thermal oxidized SOI cylindrical nanopore using surface-initiated atom transfer radical polymerization (SI-ATRP). An equivalent circuit model was developed to extract conductive and resistive values of the nanopore in ionic solutions. The ionic conductance of PE coated nanopore was effectively rectified by varying the pH and gate bias.
In this doctoral research, a voltage bias was applied on the device silicon layer of Silicon-on-Insulator (SOI) cylindrical single nanopore to analyze how the perpendicular gate electrical field affected the ionic current through the pore. The nanopore was fabricated using electron beam lithography (EBL) and reactive ion etching (RIE) which are standard CMOS processes and can be integrated into any electronic circuit with massive production. The long cylindrical pore shape provides a larger surface area inside the aperture compared to other nanopores whose surface charge is of vital importance to ion transport.
Ionic transport through the nanopore was characterized by measuring the ionic conductance of the nanopore in aqueous hydrochloric acid and potassium chloride solutions under field effect modulation. The nanopores were separately coated with negatively charged thermal silicon oxide and positively charged aluminum oxide using Atomic Layer Deposition. Both layers worked as electrical insulation layers preventing leakage current once the substrate bias was applied. Different surface charges also provided different counterion-coion configurations. The transverse conductance of the nanopore at low electrolyte concentrations (<10-4 M) changed with voltage bias when the Debye length was comparable to the dimensions of the nanopore.
Ionic transport through nanopores coated with polyelectrolyte (PE) brushes were also investigated in ionic solutions with various pH values using Electrochemical Impedance spectroscopy (EIS). The pH sensitive poly[2–(dimethylamino) ethyl methacrylate] (PDMAEMA) PE brushes were integrated on the inner walls as well as the surface of the thermal oxidized SOI cylindrical nanopore using surface-initiated atom transfer radical polymerization (SI-ATRP). An equivalent circuit model was developed to extract conductive and resistive values of the nanopore in ionic solutions. The ionic conductance of PE coated nanopore was effectively rectified by varying the pH and gate bias.
ContributorsWang, Xiaofeng (Author) / Goryll, Michael (Thesis advisor) / Thornton, Trevor J (Committee member) / Christen, Jennifer M (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
Description
A novel integrated constant current LED driver design on a single chip is developed in this dissertation. The entire design consists of two sections. The first section is a DC-DC switching regulator (boost regulator) as the frontend power supply; the second section is the constant current LED driver system.
In the first section, a pulse width modulated (PWM) peak current mode boost regulator is utilized. The overall boost regulator system and its related sub-cells are explained. Among them, an original error amplifier design, a current sensing circuit and slope compensation circuit are presented.
In the second section – the focus of this dissertation – a highly accurate constant current LED driver system design is unveiled. The detailed description of this highly accurate LED driver system and its related sub-cells are presented. A hybrid PWM and linear current modulation scheme to adjust the LED driver output currents is explained. The novel design ideas to improve the LED current accuracy and channel-to-channel output current mismatch are also explained in detail. These ideas include a novel LED driver system architecture utilizing 1) a dynamic current mirror structure and 2) a closed loop structure to keep the feedback loop of the LED driver active all the time during both PWM on-duty and PWM off-duty periods. Inside the LED driver structure, the driving amplifier with a novel slew rate enhancement circuit to dramatically accelerate its response time is also presented.
In the first section, a pulse width modulated (PWM) peak current mode boost regulator is utilized. The overall boost regulator system and its related sub-cells are explained. Among them, an original error amplifier design, a current sensing circuit and slope compensation circuit are presented.
In the second section – the focus of this dissertation – a highly accurate constant current LED driver system design is unveiled. The detailed description of this highly accurate LED driver system and its related sub-cells are presented. A hybrid PWM and linear current modulation scheme to adjust the LED driver output currents is explained. The novel design ideas to improve the LED current accuracy and channel-to-channel output current mismatch are also explained in detail. These ideas include a novel LED driver system architecture utilizing 1) a dynamic current mirror structure and 2) a closed loop structure to keep the feedback loop of the LED driver active all the time during both PWM on-duty and PWM off-duty periods. Inside the LED driver structure, the driving amplifier with a novel slew rate enhancement circuit to dramatically accelerate its response time is also presented.
ContributorsWang, Ge (Author) / Holbert, Keith E. (Thesis advisor) / Song, Hongjiang (Committee member) / Ayyanar, Raja (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2016
Towards high-efficiency thin-film solar cells: from theoretical analysis to experimental exploration
Description
GaAs single-junction solar cells have been studied extensively in recent years, and have reached over 28 % efficiency. Further improvement requires an optically thick but physically thin absorber to provide both large short-circuit current and high open-circuit voltage. By detailed simulation, it is concluded that ultra-thin GaAs cells with hundreds of nanometers thickness and reflective back scattering can potentially offer efficiencies greater than 30 %. The 300 nm GaAs solar cell with AlInP/Au reflective back scattering is carefully designed and demonstrates an efficiency of 19.1 %. The device performance is analyzed using the semi-analytical model with Phong distribution implemented to account for non-Lambertian scattering. A Phong exponent m of ~12, a non-radiative lifetime of 130 ns, and a specific series resistivity of 1.2 Ω·cm2 are determined.
Thin-film CdTe solar cells have also attracted lots of attention due to the continuous improvements in their device performance. To address the issue of the lower efficiency record compared to detailed-balance limit, the single-crystalline Cd(Zn)Te/MgCdTe double heterostructures (DH) grown on InSb (100) substrates by molecular beam epitaxy (MBE) are carefully studied. The Cd0.9946Zn0.0054Te alloy lattice-matched to InSb has been demonstrated with a carrier lifetime of 0.34 µs observed in a 3 µm thick Cd0.9946Zn0.0054Te/MgCdTe DH sample. The substantial improvement of lifetime is due to the reduction in misfit dislocation density. The recombination lifetime and interface recombination velocity (IRV) of CdTe/MgxCd1-xTe DHs are investigated. The IRV is found to be dependent on both the MgCdTe barrier height and width due to the thermionic emission and tunneling processes. A record-long carrier lifetime of 2.7 µs and a record-low IRV of close to zero have been confirmed experimentally.
The MgCdTe/Si tandem solar cell is proposed to address the issue of high manufacturing costs and poor performance of thin-film solar cells. The MBE grown MgxCd1-xTe/MgyCd1-yTe DHs have demonstrated the required bandgap energy of 1.7 eV, a carrier lifetime of 11 ns, and an effective IRV of (1.869 ± 0.007) × 103 cm/s. The large IRV is attributed to thermionic-emission induced interface recombination. These understandings can be applied to fabricating the high-efficiency low-cost MgCdTe/Si tandem solar cell.
Thin-film CdTe solar cells have also attracted lots of attention due to the continuous improvements in their device performance. To address the issue of the lower efficiency record compared to detailed-balance limit, the single-crystalline Cd(Zn)Te/MgCdTe double heterostructures (DH) grown on InSb (100) substrates by molecular beam epitaxy (MBE) are carefully studied. The Cd0.9946Zn0.0054Te alloy lattice-matched to InSb has been demonstrated with a carrier lifetime of 0.34 µs observed in a 3 µm thick Cd0.9946Zn0.0054Te/MgCdTe DH sample. The substantial improvement of lifetime is due to the reduction in misfit dislocation density. The recombination lifetime and interface recombination velocity (IRV) of CdTe/MgxCd1-xTe DHs are investigated. The IRV is found to be dependent on both the MgCdTe barrier height and width due to the thermionic emission and tunneling processes. A record-long carrier lifetime of 2.7 µs and a record-low IRV of close to zero have been confirmed experimentally.
The MgCdTe/Si tandem solar cell is proposed to address the issue of high manufacturing costs and poor performance of thin-film solar cells. The MBE grown MgxCd1-xTe/MgyCd1-yTe DHs have demonstrated the required bandgap energy of 1.7 eV, a carrier lifetime of 11 ns, and an effective IRV of (1.869 ± 0.007) × 103 cm/s. The large IRV is attributed to thermionic-emission induced interface recombination. These understandings can be applied to fabricating the high-efficiency low-cost MgCdTe/Si tandem solar cell.
ContributorsLiu, Shi (Author) / Zhang, Yong-Hang (Thesis advisor) / Johnson, Shane R (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
Description
The microelectronics technology has seen a tremendous growth over the past sixty years. The advancements in microelectronics, which shows the capability of yielding highly reliable and reproducible structures, have made the mass production of integrated electronic components feasible. Miniaturized, low-cost, and accurate sensors became available due to the rise of the microelectronics industry. A variety of sensors are being used extensively in many portable applications. These sensors are promising not only in research area but also in daily routine applications.
However, many sensing systems are relatively bulky, complicated, and expensive and main advantages of new sensors do not play an important role in practical applications. Many challenges arise due to intricacies for sensor packaging, especially operation in a solution environment. Additional problems emerge when interfacing sensors with external off-chip components. A large amount of research in the field of sensors has been focused on how to improve the system integration.
This work presents new methods for the design, fabrication, and integration of sensor systems. This thesis addresses these challenges, for example, interfacing microelectronic system to a liquid environment and developing a new technique for impedimetric measurement. This work also shows a new design for on-chip optical sensor without any other extra components or post-processing.
However, many sensing systems are relatively bulky, complicated, and expensive and main advantages of new sensors do not play an important role in practical applications. Many challenges arise due to intricacies for sensor packaging, especially operation in a solution environment. Additional problems emerge when interfacing sensors with external off-chip components. A large amount of research in the field of sensors has been focused on how to improve the system integration.
This work presents new methods for the design, fabrication, and integration of sensor systems. This thesis addresses these challenges, for example, interfacing microelectronic system to a liquid environment and developing a new technique for impedimetric measurement. This work also shows a new design for on-chip optical sensor without any other extra components or post-processing.
ContributorsLuo, Tao (Author) / Blain Christen, Jennifer (Thesis advisor) / Song, Hongjiang (Committee member) / Goryll, Michael (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
Description
Electromagnetic band-gap (EBG) structures have noteworthy electromagnetic characteristics that include their phase variations with frequency. When combining perfect electric conductor (PEC) and EBG structures on the same ground plane, the scattering fields of the ground plane are altered because of the scattering properties of EBG structures. The scattering fields are cancelled along the principal planes because PEC and EBG structures are anti-phase at the resonant frequency. To make the scattered fields symmetrical under plane wave incidence, a square checkerboard surface is designed to form constructive and destructive interference scattering patterns to reduce the intensity of the scattered fields toward the observer; thus reducing the radar cross section (RCS). To increase the 10-dB RCS reduction (compared to a PEC surface) bandwidth, checkerboard surfaces of two different EBG structures on the same ground plane are designed. Thus, significant RCS reduction over a wider frequency bandwidth of about 63% is achieved.
Another design is a hexagonal checkerboard surface that achieves the same RCS reduction bandwidth because it combines the same EBG designs. The hexagonal checkerboard design further reduce the RCS than square checkerboard designs because the reflected energy is re-directed toward six directions and a null remains in the normal direction.
A dual frequency band checkerboard surface with 10-dB RCS reduction bandwidths of 61% and 24% is realized by utilizing two dual-band EBG structures, while the surfaces maintain scattering in four quadrants. The first RCS reduction bandwidth of the dual band is basically the same as in the square checkerboard design; however, the present surface exhibits a second frequency band of 10-dB RCS reduction.
Finally, cylindrically curved checkerboard surfaces are designed and examined for three different radii of curvature. Both narrow and wide band curved checkerboard surfaces are evaluated under normal incidence for both horizontal and vertical polarizations. Simulated bistatic RCS patterns of the cylindrical checkerboard surfaces are presented.
For all designs, bistatic and monostatic RCS of each checkerboard surface design are compared to that of the corresponding PEC surface. The monostatic simulations are also compared with measurements as a function of frequency and polarization. A very good agreement has been attained throughout.
Another design is a hexagonal checkerboard surface that achieves the same RCS reduction bandwidth because it combines the same EBG designs. The hexagonal checkerboard design further reduce the RCS than square checkerboard designs because the reflected energy is re-directed toward six directions and a null remains in the normal direction.
A dual frequency band checkerboard surface with 10-dB RCS reduction bandwidths of 61% and 24% is realized by utilizing two dual-band EBG structures, while the surfaces maintain scattering in four quadrants. The first RCS reduction bandwidth of the dual band is basically the same as in the square checkerboard design; however, the present surface exhibits a second frequency band of 10-dB RCS reduction.
Finally, cylindrically curved checkerboard surfaces are designed and examined for three different radii of curvature. Both narrow and wide band curved checkerboard surfaces are evaluated under normal incidence for both horizontal and vertical polarizations. Simulated bistatic RCS patterns of the cylindrical checkerboard surfaces are presented.
For all designs, bistatic and monostatic RCS of each checkerboard surface design are compared to that of the corresponding PEC surface. The monostatic simulations are also compared with measurements as a function of frequency and polarization. A very good agreement has been attained throughout.
ContributorsChen, Wengang (Author) / Balanis, Constantine A. (Thesis advisor) / Aberle, James T. (Committee member) / Yu, Hongbin (Committee member) / Palais, Joseph C. (Committee member) / Arizona State University (Publisher)
Created2016