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- All Subjects: Electrical Engineering
- Creators: Yu, Hongbin
Description
Voltage Source Inverter (VSI) is an integral component that converts DC voltage to AC voltage suitable for driving the electric motor in Electric Vehicles/Hybrid Electric Vehicles (EVs/HEVs) and integration with electric grid in grid-connected photovoltaic (PV) converter. Performance of VSI is significantly impacted by the type of Pulse Width Modulation (PWM) method used.In this work, a new PWM method called 240° Clamped Space Vector PWM (240CPWM) is studied extensively. 240CPWM method has the major advantages of clamping a phase to the positive or negative rail for 240° in a fundamental period, clamping of two phases simultaneously at any given instant, and use of only active states, completely eliminating the zero states. These characteristics lead to a significant reduction in switching losses of the inverter and lower DC link capacitor current stress as compared to Conventional Space Vector PWM. A unique six pulse dynamically varying DC link voltage is required for 240CPWM instead of constant DC link voltage to maintain sinusoidal output voltage. Voltage mode control of DC-DC stage with Smith predictor is developed for shaping the dynamic DC link voltage that meets the requirements for fast control.
Experimental results from a 10 kW hardware prototype with 10 kHz switching frequency validate the superior performance of 240CPWM in EV/HEV traction inverters focusing on loss reduction and DC link capacitor currents. Full load efficiency with the proposed 240CPWM for the DC-AC stage even with conventional Silicon devices exceeds 99%.
Performance of 240CPWM is evaluated in three phase grid-connected PV converter. It is verified experimentally that 240CPWM performs well under adverse grid conditions like sag/swell and unbalance in grid voltages, and under a wide range of power factor. Undesired low frequency harmonics in inverter currents are minimized using the Harmonic Compensator that results in Total Harmonic Distortion (THD) of 3.5% with 240CPWM in compliance with grid interconnection standards. A new, combined performance index is proposed to compare the performance of different PWM schemes in terms of switching loss, THD, DC link current stress, Common Mode Voltage and leakage current. 240CPWM achieves the best value for this index among the PWM methods studied.
ContributorsQamar, Haleema (Author) / Ayyanar, Raja (Thesis advisor) / Yu, Hongbin (Committee member) / Lei, Qin (Committee member) / Weng, Yang (Committee member) / Arizona State University (Publisher)
Created2022
Description
Antenna arrays are widely used in wireless communication, radar, remote sensing, and other fields. Compared to traditional linear antenna arrays, novel nonlinear antenna arrays have fascinating advantages in terms of structural simplicity, lower cost, wider bandwidth, faster scanning speed, and lower side-lobe levels. This dissertation explores a novel design of a phased array antenna with an augmented scanning range, aiming to establish a clear connection between mathematical principles and practical circuitry. To achieve this goal, the Van der Pol (VDP) model is applied to a single-transistor oscillator to obtain the isolated limit cycle. The coupled oscillators are then integrated into a 1 times 7 coupled phased array, using the Keysight PathWave Advanced Design System (ADS) for tuning and optimization. The VDP model is used for analytic study of bifurcation, quasi-sinusoidal oscillation, quasi-periodic chaos, and oscillator death, while ADS schematics guide engineering implementation and physical fabrication. The coupled oscillators drive cavity-backed antennas, forming a one-dimensional scanning antenna array of 1 times 7. The approaches for increasing the scanning range performance are discussed.
ContributorsZhang, Kaiyue (Author) / Pan, George (Thesis advisor) / Yu, Hongbin (Committee member) / Aberle, James (Committee member) / Palais, Joseph (Committee member) / Arizona State University (Publisher)
Created2023
Description
The strong demand for the advancing of Moore’s law on device size scaling down has accelerated the miniaturization of passive devices. Among these important electronic components, inductors are facing challenges because the inductance value, which is strongly dependent on the coil number for the air core inductor case, will be sacrificed when the size is shrinking. Adding magnetic core is one of the solutions due to its enhancement of inductance density but it will also add complexity to the fabrication process, and the core loss induced by the eddy current at high frequency is another drawback. In this report, the output of this research will be presented, which has three parts. In the first part, the CoZrTaB thin films are sputtered on different substrates and characterized comprehensively. The laminated CoZrTaB thin films have been also investigated, showing low coercivity and anisotropy field on both Si and polyimide substrates. Also, the different process conditions that could affect the magnetic properties are investigated.
In the second part, Ansys Maxwell software is used to optimize the lamination profile and the magnetic core inductor structure. The measured M-H loop is imported to improve the simulation accuracy.
In the third part, a novel method to fabricate the magnetic core inductors on flexible substrates is proposed. The sandwich magnetic core inductor is fabricated and assembled with flipchip bonder. The measurement result shows that this single-turn magnetic core inductor can achieve up to 24% inductance enhancement and quality factor of 7.42. The super low DC resistance (< 60 mΩ) proves that it is a good candidate to act as the passive component in the power delivery module and the use of polyimide-based substrate extends its compatibility to more packaging form factors.
ContributorsWu, Yanze (Author) / Yu, Hongbin (Thesis advisor) / Chickamenahalli, Shamala (Committee member) / Rizzo, Nicholas (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2022
Description
A remarkable phenomenon in contemporary physics is quantum scarring in classically chaoticsystems, where the wave functions tend to concentrate on classical periodic orbits. Quantum
scarring has been studied for more than four decades, but the problem of efficiently detecting
quantum scars has remained to be challenging, relying mostly on human visualization of
wave function patterns. This paper develops a machine learning approach to detecting
quantum scars in an automated and highly efficient manner. In particular, this paper exploits Meta
learning. The first step is to construct a few-shot classification algorithm, under the
requirement that the one-shot classification accuracy be larger than 90%. Then propose a
scheme based on a combination of neural networks to improve the accuracy. This paper shows that
the machine learning scheme can find the correct quantum scars from thousands images of
wave functions, without any human intervention, regardless of the symmetry of the underlying
classical system. This will be the first application of Meta learning to quantum systems. Interacting spin networks are fundamental to quantum computing. Data-based tomography oftime-independent spin networks has been achieved, but an open challenge is to ascertain the
structures of time-dependent spin networks using time series measurements taken locally
from a small subset of the spins. Physically, the dynamical evolution of a spin network under
time-dependent driving or perturbation is described by the Heisenberg equation of motion.
Motivated by this basic fact, this paper articulates a physics-enhanced machine learning framework
whose core is Heisenberg neural networks. This paper demonstrates that, from local measurements, not only the local Hamiltonian can be recovered but the Hamiltonian reflecting the interacting structure of the whole system can
also be faithfully reconstructed. Using Heisenberg neural machine on spin networks of a
variety of structures. In the extreme case where measurements are taken from only one spin,
the achieved tomography fidelity values can reach about 90%. The developed machine
learning framework is applicable to any time-dependent systems whose quantum dynamical
evolution is governed by the Heisenberg equation of motion.
ContributorsHan, Chendi (Author) / Lai, Ying-Cheng (Thesis advisor) / Yu, Hongbin (Committee member) / Dasarathy, Gautam (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2022
Description
The performance of voltage source inverter (VSI) in terms of output waveform quality, conversion efficiency and common mode noise depends greatly on the pulse width modulation (PWM) method. In this work, a low-loss space vector PWM i.e., 240°-clamped space vector PWM (240CPWM) is proposed to improve the performance of VSIs in electric/hybrid electric vehicles (EV/HEVs) and grid connected photovoltaic (PV) systems. The salient features of 240CPWM include 240° clamping of each phase pole to positive or negative DC bus in a fundamental cycle ensuring that switching losses are reduced by a factor of seven as compared to conventional space vector PWM (CSVPWM) at unity power factor. Zero states are completely eliminated and only two nearest active states are used ensuring that there is no penalty in terms of total harmonic distortion (THD) in line current. The THD of the line current is analyzed using the notion of stator flux ripple and compared with conventional and discontinuous PWM method. Discontinuous PWM methods achieve switching loss reduction at the expense of higher THD while 240CPWM achieves a much greater loss reduction without impacting the THD. The analysis and performance of 240CPWM are validated on a 10 kW two-stage experimental prototype.
Common mode voltage (CMV) and leakage current characteristics of 240CPWM are analyzed in detail. It is shown analytically that 240CPWM reduces the CMV and leakage current as compared to other PWM methods while simultaneously reducing the switching loss and THD. Experimental results from a 10-kW hardware prototype conform to the analytical discussions and validate the superior performance of 240CPWM.
240CPWM requires a six-pulse dynamic DC link voltage that introduces low frequency harmonics in DC input current and/or AC line currents that can affect maximum power point tracking, battery life or THD in line current. Four topologies have been proposed to minimize the low frequency harmonics in input and line currents in grid-connected PV system with 240CPWM.
In order to achieve further benefits in terms of THD and device stress reduction, 240CPWM is extended to three-level inverters. The performance metrics such as THD and switching loss for 240CPWM are analyzed in three-level inverter.
ContributorsQamar, Hafsa (Author) / Ayyanar, Raja (Thesis advisor) / Yu, Hongbin (Committee member) / Lei, Qin (Committee member) / Weng, Yang (Committee member) / Arizona State University (Publisher)
Created2022
Description
Although the increasing penetration of electric vehicles (EVs) has reduced the emissionof the greenhouse gas caused by vehicles, it would lead to serious congestion
on-road and in charging stations. Strategic coordination of EV charging would benefit
the transportation system. However, it is difficult to model a congestion game,
which includes choosing charging routes and stations. Furthermore, conventional algorithms
cannot balance System Optimization and User Equilibrium, which can cause
a huge waste to the whole society. To solve these problems, this paper shows (1) a
congestion game setup to optimize and reveal the relationship between EV users,
(2) using ε – Nash Equilibrium to reduce the inefficient impact from the self-minded
the behavior of the EV users, and (3) finding the relatively optimal solution to approach
Pareto-Optimal solution. The proposed method can reduce more total EVs charging
time and most EV users’ charging time than existing methods. Numerical simulations
demonstrate the advantages of the new method compared to the current methods.
ContributorsYu, Hao (Author) / Weng, Yang (Thesis advisor) / Yu, Hongbin (Committee member) / Zhang, Yanchao (Committee member) / Arizona State University (Publisher)
Created2022
Description
Patterning technologies for micro/nano-structures have been essentially used in a variety of discipline research areas, including electronics, optics, material science, and biotechnology. Therefore their importance has dramatically increased over the past decades. This dissertation presents various advanced patterning processes utilizing cross-discipline technologies, e.g., photochemical deposition, transfer printing (TP), and nanoimprint lithography (NIL), to demonstrate inexpensive, high throughput, and scalable manufacturing for advanced optical applications.
The polymer-assisted photochemical deposition (PPD) method is employed in the form of additive manufacturing (AM) to print ultra-thin (< 5 nm) and continuous film in micro-scaled (> 6.5 μm) resolution. The PPD film acts as a lossy material in the Fabry-Pérot cavity structures and generates vivid colored images with a micro-scaled resolution by inducing large modulation of reflectance. This PPD-based structural color printing performs without photolithography and vacuum deposition in ambient and room-temperature conditions, which enables an accessible and inexpensive process (Chapter 1).
In the TP process, germanium (Ge) is used as the nucleation layer of noble metallic thin films to prevent structural distortion and improve surface morphology. The developed Ge-assisted transfer printing (GTP) demonstrates its feasibility transferring sub-100 nm features with up to 50 nm thickness in a centimeter scale. The GTP is also capable of transferring arbitrary metallic nano-apertures with minimal pattern distortion, providing relatively less expensive, simpler, and scalable manufacturing (Chapter 2).
NIL is employed to fabricate the double-layered chiral metasurface for polarimetric imaging applications. The developed NIL process provides multi-functionalities with a single NIL, i.e., spacing layer, planarized surface, and formation of dielectric gratings, respectively, which significantly reduces fabrication processing time and potential cost by eliminating several steps in the conventional fabrication process. During the integration of two metasurfaces, the Moiré fringe based alignment method is employed to accomplish the alignment accuracy of less than 200 nm in both x- and y-directions, which is superior to conventional photolithography. The dramatically improved optical performance, e.g., highly improved circular polarization extinction ratio (CPER), is also achieved with the developed NIL process (Chapter 3).
ContributorsChoi, Shinhyuk (Author) / Wang, Chao (Thesis advisor) / Yu, Hongbin (Committee member) / Holman, Zachary (Committee member) / Hwa, Yoon (Committee member) / Arizona State University (Publisher)
Created2023
Description
Wide bandgap semiconductors, also known as WBG semiconductors are materials which have larger bandgaps than conventional semiconductors such as Si or GaAs. They permit devices to operate at much higher voltages, frequencies and temperatures. They are the key material used to make LEDs, lasers, radio frequency applications, military applications, and power electronics. Their intrinsic qualities make them promising for next-generation devices for general semiconductor use. Their ability to handle higher power density is particularly attractive for attempts to sustain Moore's law, as conventional technologies appear to be reaching a bottleneck. Apart from WBG materials, ultra-wide bandgap (UWBG) materials, such as Ga2O3, AlN, diamond, or BN, are also attractive since they have even more extreme properties. Although this field is relatively new, which still remains a lot of effort to study and investigate, people can still expect that these materials could be the main characters for more advanced applications in the near future.
In the dissertation, three topics with power devices made by WBG or UWBG semiconductors were introduced. In chapter 1, a generally background knowledge introduction is given. This helps the reader to learn current research focuses. In chapter 2, a comprehensive study of temperature-dependent characteristics of Ga2O3 SBDs with highly-doped substrate is demonstrated. A modified thermionic emission model over an inhomogeneous barrier with a voltage-dependent barrier height is investigated. Besides, the mechanism of surface leakage current is also discussed. These results are beneficial for future developments of low-loss β-Ga2O3 electronics and optoelectronics. In chapter 3, vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures on bulk GaN substrates was introduced. This work represents a useful reference for the FMR termination design for GaN power devices. In chapter 4, AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) fabricated on Si substrates with a 10 nm boron nitride (BN) layer as gate dielectric was demonstrated. The material characterization was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy (UPS). And the gate leakage current mechanisms were also investigated by temperature-dependent current-voltage measurements.
Although still in its infancy, past and projected future progress of electronic designs will ultimately achieve this very goal that WBG and UWBG semiconductors will be indispensable for today and future’s science, technologies and society.
ContributorsYang, Tsung-Han (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Nemanich, Robert (Committee member) / Arizona State University (Publisher)
Created2021
Description
Wurtzite (B, Ga, Al) N semiconductors, especially (Ga, Al) N material systems, demonstrate immense promises to boost the economic growth in the semiconductor industry that is approaching the end of Moore’s law. At the material level, their high electric field strength, high saturation velocity, and unique heterojunction polarization charge have enabled tremendous potentials for high power, high frequency, and photonic applications. With the availability of large-area bulk GaN substrates and high-quality epilayer on foreign substrates, the power conversion applications of GaN are now at the cusp of commercialization.Despite these encouraging advances, there remain two critical hurdles in GaN-based technology: selective area doping and hole-based p-channel devices. Current selective area doping methods are still immature and lead to low-quality lateral p-n junctions, which prevent the realization of advanced power transistors and rectifiers. The missing of hole-based p-channel devices hinders the development of GaN complementary integrated circuits.
This thesis comprehensively studied these challenges. The first part (chapter 2) researched the selective area doping by etch-then-regrow. A GaN-based vertical-channel junction field-effect transistors (VC-JFETs) was experimentally demonstrated by blanket regrowth and self-planarization. The devices’ electrical performances were characterized to understand the regrowth quality. The non-ideal factors during p-GaN regrowth were also discussed. The second part (chapter 3-5) systematically studied the application of the hydrogen plasma treatment process to change the p-GaN properties selectively. A novel GaN-based metal-insulator-semiconductor junction was demonstrated. Then a novel edge termination design with avalanche breakdown capability achieved in GaN power rectifiers is proposed. The last part (Chapter 6) demonstrated a GaN-based p-channel heterojunction field-effect transistor, with record low leakage, subthreshold swing, and a record high on/off ratio. In the end, some outlook and future work have also been proposed.
Although in infancy, the demonstrated etch-then-regrow and the hydrogen plasma treatment methods have the potential to ultimately solve the challenges in GaN and benefit the development of the wide-ultra-wide bandgap industry, technology, and society.
ContributorsYang, Chen (Author) / Zhao, Yuji (Thesis advisor) / Goodnick, Stephen (Committee member) / Yu, Hongbin (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2021
Description
Machine learning (ML) and deep learning (DL) has become an intrinsic part of multiple fields. The ability to solve complex problems makes machine learning a panacea. In the last few years, there has been an explosion of data generation, which has greatly improvised machine learning models. But this comes with a cost of high computation, which invariably increases power usage and cost of the hardware. In this thesis we explore applications of ML techniques, applied to two completely different fields - arts, media and theater and urban climate research using low-cost and low-powered edge devices. The multi-modal chatbot uses different machine learning techniques: natural language processing (NLP) and computer vision (CV) to understand inputs of the user and accordingly perform in the play and interact with the audience. This system is also equipped with other interactive hardware setups like movable LED systems, together they provide an experiential theatrical play tailored to each user. I will discuss how I used edge devices to achieve this AI system which has created a new genre in theatrical play. I will then discuss MaRTiny, which is an AI-based bio-meteorological system that calculates mean radiant temperature (MRT), which is an important parameter for urban climate research. It is also equipped with a vision system that performs different machine learning tasks like pedestrian and shade detection. The entire system costs around $200 which can potentially replace the existing setup worth $20,000. I will further discuss how I overcame the inaccuracies in MRT value caused by the system, using machine learning methods. These projects although belonging to two very different fields, are implemented using edge devices and use similar ML techniques. In this thesis I will detail out different techniques that are shared between these two projects and how they can be used in several other applications using edge devices.
ContributorsKulkarni, Karthik Kashinath (Author) / Jayasuriya, Suren (Thesis advisor) / Middel, Ariane (Thesis advisor) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2021