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Description
Due to restructuring and open access to the transmission system, modern electric power systems are being operated closer to their operational limits. Additionally, the secure operational limits of modern power systems have become increasingly difficult to evaluate as the scale of the network and the number of transactions between utilities increase. To account for these challenges associated with the rapid expansion of electric power systems, dynamic equivalents have been widely applied for the purpose of reducing the computational effort of simulation-based transient security assessment. Dynamic equivalents are commonly developed using a coherency-based approach in which a retained area and an external area are first demarcated. Then the coherent generators in the external area are aggregated and replaced by equivalenced models, followed by network reduction and load aggregation. In this process, an improperly defined retained area can result in detrimental impacts on the effectiveness of the equivalents in preserving the dynamic characteristics of the original unreduced system. In this dissertation, a comprehensive approach has been proposed to determine an appropriate retained area boundary by including the critical generators in the external area that are tightly coupled with the initial retained area. Further-more, a systematic approach has also been investigated to efficiently predict the variation in generator slow coherency behavior when the system operating condition is subject to change. Based on this determination, the critical generators in the external area that are tightly coherent with the generators in the initial retained area are retained, resulting in a new retained area boundary. Finally, a novel hybrid dynamic equivalent, consisting of both a coherency-based equivalent and an artificial neural network (ANN)-based equivalent, has been proposed and analyzed. The ANN-based equivalent complements the coherency-based equivalent at all the retained area boundary buses, and it is designed to compensate for the discrepancy between the full system and the conventional coherency-based equivalent. The approaches developed have been validated on a large portion of the Western Electricity Coordinating Council (WECC) system and on a test case including a significant portion of the eastern interconnection.
ContributorsMa, Feng (Author) / Vittal, Vijay (Thesis advisor) / Tylavsky, Daniel (Committee member) / Heydt, Gerald (Committee member) / Si, Jennie (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in thesis addresses these points. I simulated the carrier densities, potentials, electric fields etc. of MOSFETs, BJTs and JFETs at and near the pinch-off regions to determine exactly what happens there. I also simulated the behavior of the quasi-Fermi levels. For MOSFETs, the channel thickness expands slightly before the pinch-off point and then spreads out quickly in a triangular shape and the space-charge region under the channel actually shrinks as the potential increases from source to drain. For BJTs, with collector-base junction reverse biased, most minority carriers diffuse through the base from emitter to collector very fast, but the minority carrier concentration at the collector-base space-charge region is not zero. For JFETs, the boundaries of the space-charge region are difficult to determine, the channel does not disappear after pinch off, the shape of channel is always tapered, and the carrier concentration in the channel decreases progressively. After simulating traditional sized devices, I also simulated typical nano-scaled devices and show that they behave similarly to large devices. These simulation results provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
ContributorsYang, Xuan (Author) / Schroder, Dieter K. (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
Proportional-Integral-Derivative (PID) controllers are a versatile category of controllers that are commonly used in the industry as control systems due to the ease of their implementation and low cost. One problem that continues to intrigue control designers is the matter of finding a good combination of the three parameters - P, I and D of these controllers so that system stability and optimum performance is achieved. Also, a certain amount of robustness to the process is expected from the PID controllers. In the past, many different methods for tuning PID parameters have been developed. Some notable techniques are the Ziegler-Nichols, Cohen-Coon, Astrom methods etc. For all these techniques, a simple limitation remained with the fact that for a particular system, there can be only one set of tuned parameters; i.e. there are no degrees of freedom involved to readjust the parameters for a given system to achieve, for instance, higher bandwidth. Another limitation in most cases is where a controller is designed in continuous time then converted into discrete-time for computer implementation. The drawback of this method is that some robustness due to phase and gain margin is lost in the process. In this work a method of tuning PID controllers using a loop-shaping approach has been developed where the bandwidth of the system can be chosen within an acceptable range. The loop-shaping is done against a Glover-McFarlane type ℋ∞ controller which is widely accepted as a robust control design method. The numerical computations are carried out entirely in discrete-time so there is no loss of robustness due to conversion and approximations near Nyquist frequencies. Some extra degrees of freedom owing to choice of bandwidth and capability of choosing loop-shapes are also involved and are discussed in detail. Finally, comparisons of this method against existing techniques for tuning PID controllers both in continuous and in discrete-time are shown. The results tell us that our design performs well for loop-shapes that are achievable through a PID controller.
ContributorsShafique, Md. Ashfaque Bin (Author) / Tsakalis, Konstantinos S. (Thesis advisor) / Rodriguez, Armando A. (Committee member) / Si, Jennie (Committee member) / Arizona State University (Publisher)
Created2011
Description
This thesis describes an approach to system identification based on compressive sensing and demonstrates its efficacy on a challenging classical benchmark single-input, multiple output (SIMO) mechanical system consisting of an inverted pendulum on a cart. Due to its inherent non-linearity and unstable behavior, very few techniques currently exist that are capable of identifying this system. The challenge in identification also lies in the coupled behavior of the system and in the difficulty of obtaining the full-range dynamics. The differential equations describing the system dynamics are determined from measurements of the system's input-output behavior. These equations are assumed to consist of the superposition, with unknown weights, of a small number of terms drawn from a large library of nonlinear terms. Under this assumption, compressed sensing allows the constituent library elements and their corresponding weights to be identified by decomposing a time-series signal of the system's outputs into a sparse superposition of corresponding time-series signals produced by the library components. The most popular techniques for non-linear system identification entail the use of ANN's (Artificial Neural Networks), which require a large number of measurements of the input and output data at high sampling frequencies. The method developed in this project requires very few samples and the accuracy of reconstruction is extremely high. Furthermore, this method yields the Ordinary Differential Equation (ODE) of the system explicitly. This is in contrast to some ANN approaches that produce only a trained network which might lose fidelity with change of initial conditions or if facing an input that wasn't used during its training. This technique is expected to be of value in system identification of complex dynamic systems encountered in diverse fields such as Biology, Computation, Statistics, Mechanics and Electrical Engineering.
ContributorsNaik, Manjish Arvind (Author) / Cochran, Douglas (Thesis advisor) / Kovvali, Narayan (Committee member) / Kawski, Matthias (Committee member) / Platte, Rodrigo (Committee member) / Arizona State University (Publisher)
Created2011
Description
The long wavelength infrared region (LWIR) and mid wavelength infrared region (MWIR) are of great interest as detection in this region offers a wide range of real time applications. Optoelectronic devices operating in the LWIR and MWIR region offer potential applications such as; optical gas sensing, free-space optical communications, infrared counter-measures, biomedical and thermal imaging etc. HgCdTe is a prominent narrow bandgap material that operates in the LWIR region. The focus of this research work is to simulate and analyze the characteristics of a Hg1-xCdxTe photodetector. To achieve this, the tool `OPTODET' has been developed, where various device parameters can be varied and the resultant output can be analyzed. By the study of output characteristics in response to various changes in device parameters will allow users to understand the considerations that must be made in order to reach the optimum working point of an infrared detector. The tool which has been developed is a 1-D drift diffusion based simulator which solves the 1-D Poisson equation to determine potentials and utilizes the results of the 1-D electron and hole continuity equations to determine current. Parameters such as absorption co-efficient, quantum efficiency, dark current, noise, Transit time and detectivity can be simulated. All major recombination mechanisms such as SRH, Radiative and Auger recombination have been considered. Effects of band to band tunnelling have also been considered to correctly model the dark current characteristics.
ContributorsMuralidharan, Pradyumna (Author) / Vasileska, Dragica (Thesis advisor) / Wijewarnasuriya, Priyalal S. (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2011
Description
In the late 1960s, Granger published a seminal study on causality in time series, using linear interdependencies and information transfer. Recent developments in the field of information theory have introduced new methods to investigate the transfer of information in dynamical systems. Using concepts from Chaos and Markov theory, much of these methods have evolved to capture non-linear relations and information flow between coupled dynamical systems with applications to fields like biomedical signal processing. This thesis deals with the application of information theory to non-linear multivariate time series and develops measures of information flow to identify significant drivers and response (driven) components in networks of coupled sub-systems with variable coupling in strength and direction (uni- or bi-directional) for each connection. Transfer Entropy (TE) is used to quantify pairwise directional information. Four TE-based measures of information flow are proposed, namely TE Outflow (TEO), TE Inflow (TEI), TE Net flow (TEN), and Average TE flow (ATE). First, the reliability of the information flow measures on models, with and without noise, is evaluated. The driver and response sub-systems in these models are identified. Second, these measures are applied to electroencephalographic (EEG) data from two patients with focal epilepsy. The analysis showed dominant directions of information flow between brain sites and identified the epileptogenic focus as the system component typically with the highest value for the proposed measures (for example, ATE). Statistical tests between pre-seizure (preictal) and post-seizure (postictal) information flow also showed a breakage of the driving of the brain by the focus after seizure onset. The above findings shed light on the function of the epileptogenic focus and understanding of ictogenesis. It is expected that they will contribute to the diagnosis of epilepsy, for example by accurate identification of the epileptogenic focus from interictal periods, as well as the development of better seizure detection, prediction and control methods, for example by isolating pathologic areas of excessive information flow through electrical stimulation.
ContributorsPrasanna, Shashank (Author) / Jassemidis, Leonidas (Thesis advisor) / Tsakalis, Konstantinos (Thesis advisor) / Tepedelenlioğlu, Cihan (Committee member) / Arizona State University (Publisher)
Created2011
Description
A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays. Mixed oxide semiconductor thin film transistors (TFTs) on flexible plastic substrates typically suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer enables significant improvements in both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment in the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible colorless plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors.
ContributorsMarrs, Michael (Author) / Raupp, Gregory B (Thesis advisor) / Vogt, Bryan D (Thesis advisor) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2011
Description
All-dielectric self-supporting (ADSS) fiber optic cables are used for data transfer by the utilities. They are installed along high voltage transmission lines. Dry band arcing, a phenomenon which is observed in outdoor insulators, is also observed in ADSS cables. The heat developed during dry band arcing damages the ADSS cables' outer sheath. A method is presented here to rate the cable sheath using the power developed during dry band arcing. Because of the small diameter of ADSS cables, mechanical vibration is induced in ADSS cable. In order to avoid damage, vibration dampers known as spiral vibration dampers (SVD) are used over these ADSS cables. These dampers are installed near the armor rods, where the presence of leakage current and dry band activity is more. The effect of dampers on dry band activity is investigated by conducting experiments on ADSS cable and dampers. Observations made from the experiments suggest that the hydrophobicity of the cable and damper play a key role in stabilizing dry band arcs. Hydrophobic-ity of the samples have been compared. The importance of hydrophobicity of the samples is further illustrated with the help of simulation results. The results indi-cate that the electric field increases at the edges of water strip. The dry band arc-ing phenomenon could thus be correlated to the hydrophobicity of the outer sur-face of cable and damper.
ContributorsPrabakar, Kumaraguru (Author) / Karady, George G. (Thesis advisor) / Vittal, Vijay (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2011
Description
The high penetration of photovoltaic (PV) both at the utility and at the distribu-tion levels, has raised concerns about the reliability of grid-tied inverters of PV power systems. Inverters are generally considered as the weak link in PV power systems. The lack of a dedicated qualification/reliability standard for PV inverters is a main barrier in realizing higher level of confidence in reliability. Development of a well-accepted design qualification standard specifically for PV inverters will help pave the way for significant improvement in reliability and performance of inverters across the entire industry. The existing standards for PV inverters such as UL 1741 and IEC 62109-1 primarily focus on safety. IEC 62093 discusses inverter qualification but it includes all the balance of sys-tem components and therefore not specific to PV inverters. There are other general stan-dards for distributed generators including the IEEE1547 series of standards which cover major concerns like utility integration but they are not dedicated to PV inverters and are not written from a design qualification point of view. In this thesis, some of the potential requirements for a design qualification standard for PV inverters are addressed. The IEC 62093 is considered as a guideline and the possible inclusions in the framework for a dedicated design qualification standard of PV inverter are discussed. The missing links in existing PV inverter related standards are identified by performing gap analysis. Dif-ferent requirements of small residential inverters compared to large utility-scale systems, and the emerging requirements on grid support features are also considered. Electric stress test is found to be the key missing link and one of the electric stress tests, the surge withstand test is studied in detail. The use of the existing standards for surge withstand test of residential scale PV inverters is investigated and a method to suitably adopt these standards is proposed. The proposed method is studied analytically and verified using simulation. A design criterion for choosing the switch ratings of the inverter that can per-form reliably under the surge environment is derived.
ContributorsAlampoondi Venkataramanan, Sai Balasubramanian (Author) / Ayyanar, Raja (Thesis advisor) / Vittal, Vijay (Committee member) / Heydt, Gerald (Committee member) / Arizona State University (Publisher)
Created2011
Description
Obtaining local electrochemical (EC) information is extremely important for understanding basic surface reactions, and for many applications. Scanning electrochemical microscopy (SECM) can obtain local EC information by scanning a microelectrode across the surface. Although powerful, SECM is slow, the scanning microelectrode may perturb reaction and the measured signal decreases with the size of microelectrode. This thesis demonstrates a new imaging technique based on a principle that is completely different from the conventional EC detection technologies. The technique, referred to as plasmonic-based electrochemical imaging (PECI), images local EC current (both faradaic and non-faradaic) without using a scanning microelectrode. Because PECI response is an optical signal originated from surface plasmon resonance (SPR), PECI is fast and non-invasive and its signal is proportional to incident light intensity, thus does not decrease with the area of interest. A complete theory is developed in this thesis work to describe the relationship between EC current and PECI signal. EC current imaging at various fixed potentials and local cyclic voltammetry methods are developed and demonstrated with real samples. Fast imaging rate (up to 100,000 frames per second) with 0.2×3µm spatial resolution and 0.3 pA detection limit have been achieved. Several PECI applications have been developed to demonstrate the unique strengths of the new imaging technology. For example, trace particles in fingerprint is detected by PECI, a capability that cannot be achieved with the conventional EC technologies. Another example is PECI imaging of EC reaction and interfacial impedance of graphene of different thicknesses. In addition, local square wave voltammetry capability is demonstrated and applied to study local catalytic current of platinum nanoparticle microarray. This thesis also describes a related but different research project that develops a new method to measure surface charge densities of SPR sensor chips, and micro- and nano-particles. A third project of this thesis is to develop a method to expand the conventional SPR detection and imaging technology by including a waveguide mode. This innovation creates a sensitive detection of bulk index of refraction, which overcomes the limitation that the conventional SPR can probe only changes near the sensor surface within ~200 nm.
ContributorsShan, Xiaonan (Author) / Tao, Nongjian (Thesis advisor) / Chae, Junseok (Committee member) / Christen, Jennifer Blain (Committee member) / Hayes, Mark (Committee member) / Arizona State University (Publisher)
Created2011