Matching Items (16)
Filtering by
- All Subjects: Electrical Engineering
Description
In this work, transport in nanowire materials and nanowire field effect transistors is studied using a full band Monte Carlo simulator within the tight binding basis. Chapter 1 is dedicated to the importance of nanowires and nanoscale devices in present day electronics and the necessity to use a computationally efficient tool to simulate transport in these devices. Chapter 2 discusses the calculation of the full band structure of nanowires based on an atomistic tight binding approach, particularly noting the use of the exact same tight binding parameters for bulk band structures as well as the nanowire band structures. Chapter 3 contains the scattering rate formula for deformation potential, polar optical phonon, ionized impurity and impact ionization scattering in nanowires using Fermi’s golden rule and the tight binding basis to describe the wave functions. A method to calculate the dielectric screening in 1D systems within the tight binding basis is also described. Importantly, the scattering rates of nanowires tends to the bulk scattering rates at high energies, enabling the use of the same parameter set that were fitted to bulk experimental data to be used in the simulation of nanowire transport. A robust and efficient method to model interband tunneling is discussed in chapter 4 and its importance in nanowire transport is highlighted. In chapter 5, energy relaxation of excited electrons is studied for free standing nanowires and cladded nanowires. Finally, in chapter 6, a full band Monte Carlo particle based solver is created which treats confinement in a full quantum way and the current voltage characteristics as well as the subthreshold swing and percentage of ballistic transport is analyzed for an In0.7Ga0.3As junctionless nanowire field effect transistor.
ContributorsHathwar, Raghuraj (Author) / Goodnick, Stephen M (Committee member) / Saraniti, Marco (Committee member) / Vasileska, Dragica (Committee member) / Ferry, David K. (Committee member) / Arizona State University (Publisher)
Created2016
Description
Semiconductor nanowires are important candidates for highly scaled three dimensional electronic devices. It is very advantageous to combine their scaling capability with the high yield of planar CMOS technology by integrating nanowire devices into planar circuits. The purpose of this research is to identify the challenges associated with the fabrication of vertically oriented Si and Ge nanowire diodes and modeling their electrical behavior so that they can be utilized to create unique three dimensional architectures that can boost the scaling of electronic devices into the next generation. In this study, vertical Ge and Si nanowire Schottky diodes have been fabricated using bottom-up vapor-liquid-solid (VLS) and top-down reactive ion etching (RIE) approaches respectively. VLS growth yields nanowires with atomically smooth sidewalls at sub-50 nm diameters but suffers from the problem that the doping increases radially outwards from the core of the devices. RIE is much faster than VLS and does not suffer from the problem of non-uniform doping. However, it yields nanowires with rougher sidewalls and gets exceedingly inefficient in yielding vertical nanowires for diameters below 50 nm. The I-V characteristics of both Ge and Si nanowire diodes cannot be adequately fit by the thermionic emission model. Annealing in forming gas which passivates dangling bonds on the nanowire surface is shown to have a considerable impact on the current through the Si nanowire diodes indicating that fixed charges and traps on the surface of the devices play a major role in determining their electrical behavior. Also, due to the vertical geometry of the nanowire diodes, electric field lines originating from the metal and terminating on their sidewalls can directly modulate their conductivity. Both these effects have to be included in the model aimed at predicting the current through vertical nanowire diodes. This study shows that the current through vertical nanowire diodes cannot be predicted accurately using the thermionic emission model which is suitable for planar devices and identifies the factors needed to build a comprehensive analytical model for predicting the current through vertically oriented nanowire diodes.
ContributorsChandra, Nishant (Author) / Goodnick, Stephen M (Thesis advisor) / Tracy, Clarence J. (Committee member) / Yu, Hongbin (Committee member) / Ferry, David K. (Committee member) / Arizona State University (Publisher)
Created2014
Description
A novel Monte Carlo rejection technique for solving the phonon and electron
Boltzmann Transport Equation (BTE), including full many-particle interactions, is
presented in this work. This technique has been developed to explicitly model
population-dependent scattering within the full-band Cellular Monte Carlo (CMC)
framework to simulate electro-thermal transport in semiconductors, while ensuring
the conservation of energy and momentum for each scattering event. The scattering
algorithm directly solves the many-body problem accounting for the instantaneous
distribution of the phonons. The general approach presented is capable of simulating
any non-equilibrium phase-space distribution of phonons using the full phonon dispersion
without the need of the approximations commonly used in previous Monte Carlo
simulations. In particular, anharmonic interactions require no assumptions regarding
the dominant modes responsible for anharmonic decay, while Normal and Umklapp
scattering are treated on the same footing.
This work discusses details of the algorithmic implementation of the three particle
scattering for the treatment of the anharmonic interactions between phonons, as well
as treating isotope and impurity scattering within the same framework. The approach
is then extended with a technique based on the multivariable Hawkes point process
that has been developed to model the emission and the absorption process of phonons
by electrons.
The simulation code was validated by comparison with both analytical, numerical,
and experimental results; in particular, simulation results show close agreement with
a wide range of experimental data such as the thermal conductivity as function of the
isotopic composition, the temperature and the thin-film thickness.
Boltzmann Transport Equation (BTE), including full many-particle interactions, is
presented in this work. This technique has been developed to explicitly model
population-dependent scattering within the full-band Cellular Monte Carlo (CMC)
framework to simulate electro-thermal transport in semiconductors, while ensuring
the conservation of energy and momentum for each scattering event. The scattering
algorithm directly solves the many-body problem accounting for the instantaneous
distribution of the phonons. The general approach presented is capable of simulating
any non-equilibrium phase-space distribution of phonons using the full phonon dispersion
without the need of the approximations commonly used in previous Monte Carlo
simulations. In particular, anharmonic interactions require no assumptions regarding
the dominant modes responsible for anharmonic decay, while Normal and Umklapp
scattering are treated on the same footing.
This work discusses details of the algorithmic implementation of the three particle
scattering for the treatment of the anharmonic interactions between phonons, as well
as treating isotope and impurity scattering within the same framework. The approach
is then extended with a technique based on the multivariable Hawkes point process
that has been developed to model the emission and the absorption process of phonons
by electrons.
The simulation code was validated by comparison with both analytical, numerical,
and experimental results; in particular, simulation results show close agreement with
a wide range of experimental data such as the thermal conductivity as function of the
isotopic composition, the temperature and the thin-film thickness.
ContributorsSabatti, Flavio Francesco Maria (Author) / Saraniti, Marco (Thesis advisor) / Smith, David J. (Committee member) / Wang, Robert (Committee member) / Goodnick, Stephen M (Committee member) / Arizona State University (Publisher)
Created2018
Description
In this work, an advanced simulation study of reliability in millimeter-wave (mm-wave) GaN Devices for power amplifier (PA) applications is performed by means of a particle-based full band Cellular Monte Carlo device simulator (CMC). The goal of the study is to obtain a systematic characterization of the performance of GaN devices operating in DC, small signal AC and large-signal radio-frequency (RF) conditions emphasizing on the microscopic properties that correlate to degradation of device performance such as generation of hot carriers, presence of material defects and self-heating effects. First, a review of concepts concerning GaN technology, devices, reliability mechanisms and PA design is presented in chapter 2. Then, in chapter 3 a study of non-idealities of AlGaN/GaN heterojunction diodes is performed, demonstrating that mole fraction variations and the presence of unintentional Schottky contacts are the main limiting factor for high current drive of the devices under study. Chapter 4 consists in a study of hot electron generation in GaN HEMTs, in terms of the accurate simulation of the electron energy distribution function (EDF) obtained under DC and RF operation, taking into account frequency and temperature variations. The calculated EDFs suggest that Class AB PAs operating at low frequency (10 GHz) are more robust to hot carrier effects than when operating under DC or high frequency RF (up to 40 GHz). Also, operation under Class A yields higher EDFs than Class AB indicating lower reliability. This study is followed in chapter 5 by the proposal of a novel π-Shaped gate contact for GaN HEMTs which effectively reduces the hot electron generation while preserving device performance. Finally, in chapter 6 the electro-thermal characterization of GaN-on-Si HEMTs is performed by means of an expanded CMC framework, where charge and heat transport are self-consistently coupled. After the electro-thermal model is validated to experimental data, the assessment of self-heating under lateral scaling is considered.
ContributorsLatorre Rey, Alvaro Daniel (Author) / Saraniti, Marco (Thesis advisor) / Kitchen, Jennifer (Committee member) / Goodnick, Stephen M (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2018
Description
This PhD thesis consists of three main themes. The first part focusses on modeling of Silver (Ag)-Chalcogenide glass based resistive memory devices known as the Programmable Metallization Cell (PMC). The proposed models are examined with the Technology Computer Aided Design (TCAD) simulations. In order to find a relationship between electrochemistry and carrier-trap statistics in chalcogenide glass films, an analytical mapping for electron trapping is derived. Then, a physical-based model is proposed in order to explain the dynamic behavior of the photodoping mechanism in lateral PMCs. At the end, in order to extract the time constant of ChG materials, a method which enables us to determine the carriers’ mobility with and without the UV light exposure is proposed. In order to validate these models, the results of TCAD simulations using Silvaco ATLAS are also presented in the study, which show good agreement.
In the second theme of this dissertation, a new model is presented to predict single event transients in 1T-1R memory arrays as an inverter, where the PMC is modeled as a constant resistance while the OFF transistor is model as a diode in parallel to a capacitance. The model divides the output voltage transient response of an inverter into three time segments, where an ionizing particle striking through the drain–body junction of the OFF-state NMOS is represented as a photocurrent pulse. If this current source is large enough, the output voltage can drop to a negative voltage. In this model, the OFF-state NMOS is represented as the parallel combination of an ideal diode and the intrinsic capacitance of the drain–body junction, while a resistance represents an ON-state NMOS. The proposed model is verified by 3-D TCAD mixed-mode device simulations. In order to investigate the flexibility of the model, the effects of important parameters, such as ON-state PMOS resistance, doping concentration of p-region in the diode, and the photocurrent pulse are scrutinized.
The third theme of this dissertation develops various models together with TCAD simulations to model the behavior of different diamond-based devices, including PIN diodes and bipolar junction transistors (BJTs). Diamond is a very attractive material for contemporary power semiconductor devices because of its excellent material properties, such as high breakdown voltage and superior thermal conductivity compared to other materials. Collectively, this research project enhances the development of high power and high temperature electronics using diamond-based semiconductors. During the fabrication process of diamond-based devices, structural defects particularly threading dislocations (TDs), may affect the device electrical properties, and models were developed to account of such defects. Recognition of their behavior helps us understand and predict the performance of diamond-based devices. Here, the electrical conductance through TD sites is shown to be governed by the Poole-Frenkel emission (PFE) for the temperature (T) range of 323 K ˂ T ˂ 423 K. Analytical models were performed to fit with experimental data over the aforementioned temperature range. Next, the Silvaco Atlas tool, a drift-diffusion based TCAD commercial software, was used to model diamond-based BJTs. Here, some field plate methods are proposed in order to decrease the surface electric field. The models used in Atlas are modified to account for both hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.
In the second theme of this dissertation, a new model is presented to predict single event transients in 1T-1R memory arrays as an inverter, where the PMC is modeled as a constant resistance while the OFF transistor is model as a diode in parallel to a capacitance. The model divides the output voltage transient response of an inverter into three time segments, where an ionizing particle striking through the drain–body junction of the OFF-state NMOS is represented as a photocurrent pulse. If this current source is large enough, the output voltage can drop to a negative voltage. In this model, the OFF-state NMOS is represented as the parallel combination of an ideal diode and the intrinsic capacitance of the drain–body junction, while a resistance represents an ON-state NMOS. The proposed model is verified by 3-D TCAD mixed-mode device simulations. In order to investigate the flexibility of the model, the effects of important parameters, such as ON-state PMOS resistance, doping concentration of p-region in the diode, and the photocurrent pulse are scrutinized.
The third theme of this dissertation develops various models together with TCAD simulations to model the behavior of different diamond-based devices, including PIN diodes and bipolar junction transistors (BJTs). Diamond is a very attractive material for contemporary power semiconductor devices because of its excellent material properties, such as high breakdown voltage and superior thermal conductivity compared to other materials. Collectively, this research project enhances the development of high power and high temperature electronics using diamond-based semiconductors. During the fabrication process of diamond-based devices, structural defects particularly threading dislocations (TDs), may affect the device electrical properties, and models were developed to account of such defects. Recognition of their behavior helps us understand and predict the performance of diamond-based devices. Here, the electrical conductance through TD sites is shown to be governed by the Poole-Frenkel emission (PFE) for the temperature (T) range of 323 K ˂ T ˂ 423 K. Analytical models were performed to fit with experimental data over the aforementioned temperature range. Next, the Silvaco Atlas tool, a drift-diffusion based TCAD commercial software, was used to model diamond-based BJTs. Here, some field plate methods are proposed in order to decrease the surface electric field. The models used in Atlas are modified to account for both hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.
ContributorsSaremi, Mehdi (Author) / Goodnick, Stephen M (Thesis advisor) / Vasileska, Dragica (Committee member) / Kozicki, Michael N (Committee member) / Yu, Shimeng (Committee member) / Arizona State University (Publisher)
Created2017
Description
4H-SiC has been widely used in many applications. All of these benefit from its extremely high critical electric field and good electron mobility. For example, 4H-SiC possesses a critical field ten times higher than that of Si, which allows high-voltage blocking layers composed of 4H-SiC to be approximately a tenth the thickness of a comparable Si device. This, in turn, reduces the device on-resistance and power losses while maintaining the same high blocking capability.
Unfortunately, commercial TCAD tools like Sentaurus and Silvaco Atlas are based on the effective mass approximation, while most 4H-SiC devices are not operated under low electric field, so the parabolic-like band approximation does not hold anymore. Hence, to get more accurate and reliable simulation results, full-band analysis is needed. The first step in the development of a full-band device simulator is the calculation of the band structure. In this work, the empirical pseudopotential method (EPM) is adopted. The next task in the sequence is the calculation of the scattering rates. Acoustic, non-polar optical phonon, polar optical phonon and Coulomb scattering are considered. Coulomb scattering is treated in real space using the particle-particle-particle-mesh (P3M) approach. The third task is coupling the bulk full-band solver with a 3D Poisson equation solver to generate a full-band device simulator.
For proof-of-concept of the methodology adopted here, a 3D resistor is simulated first. From the resistor simulations, the low-field electron mobility dependence upon Coulomb scattering in 4H-SiC devices is extracted. The simulated mobility results agree very well with available experimental data. Next, a 3D VDMOS is simulated. The nature of the physical processes occurring in both steady-state and transient conditions are revealed for the two generations of 3D VDMOS devices being considered in the study.
Due to its comprehensive nature, the developed tool serves as a basis for future investigation of 4H-SiC power devices.
Unfortunately, commercial TCAD tools like Sentaurus and Silvaco Atlas are based on the effective mass approximation, while most 4H-SiC devices are not operated under low electric field, so the parabolic-like band approximation does not hold anymore. Hence, to get more accurate and reliable simulation results, full-band analysis is needed. The first step in the development of a full-band device simulator is the calculation of the band structure. In this work, the empirical pseudopotential method (EPM) is adopted. The next task in the sequence is the calculation of the scattering rates. Acoustic, non-polar optical phonon, polar optical phonon and Coulomb scattering are considered. Coulomb scattering is treated in real space using the particle-particle-particle-mesh (P3M) approach. The third task is coupling the bulk full-band solver with a 3D Poisson equation solver to generate a full-band device simulator.
For proof-of-concept of the methodology adopted here, a 3D resistor is simulated first. From the resistor simulations, the low-field electron mobility dependence upon Coulomb scattering in 4H-SiC devices is extracted. The simulated mobility results agree very well with available experimental data. Next, a 3D VDMOS is simulated. The nature of the physical processes occurring in both steady-state and transient conditions are revealed for the two generations of 3D VDMOS devices being considered in the study.
Due to its comprehensive nature, the developed tool serves as a basis for future investigation of 4H-SiC power devices.
ContributorsCheng, Chi-Yin (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Thesis advisor) / Ponce, Fernando (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2020