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Description
The development of a Solid State Transformer (SST) that incorporates a DC-DC multiport converter to integrate both photovoltaic (PV) power generation and battery energy storage is presented in this dissertation. The DC-DC stage is based on a quad-active-bridge (QAB) converter which not only provides isolation for the load, but also

The development of a Solid State Transformer (SST) that incorporates a DC-DC multiport converter to integrate both photovoltaic (PV) power generation and battery energy storage is presented in this dissertation. The DC-DC stage is based on a quad-active-bridge (QAB) converter which not only provides isolation for the load, but also for the PV and storage. The AC-DC stage is implemented with a pulse-width-modulated (PWM) single phase rectifier. A unified gyrator-based average model is developed for a general multi-active-bridge (MAB) converter controlled through phase-shift modulation (PSM). Expressions to determine the power rating of the MAB ports are also derived. The developed gyrator-based average model is applied to the QAB converter for faster simulations of the proposed SST during the control design process as well for deriving the state-space representation of the plant. Both linear quadratic regulator (LQR) and single-input-single-output (SISO) types of controllers are designed for the DC-DC stage. A novel technique that complements the SISO controller by taking into account the cross-coupling characteristics of the QAB converter is also presented herein. Cascaded SISO controllers are designed for the AC-DC stage. The QAB demanded power is calculated at the QAB controls and then fed into the rectifier controls in order to minimize the effect of the interaction between the two SST stages. The dynamic performance of the designed control loops based on the proposed control strategies are verified through extensive simulation of the SST average and switching models. The experimental results presented herein show that the transient responses for each control strategy match those from the simulations results thus validating them.
ContributorsFalcones, Sixifo Daniel (Author) / Ayyanar, Raja (Thesis advisor) / Karady, George G. (Committee member) / Tylavsky, Daniel (Committee member) / Tsakalis, Konstantinos (Committee member) / Arizona State University (Publisher)
Created2011
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Description
The drive towards device scaling and large output power in millimeter and sub-millimeter wave power amplifiers results in a highly non-linear, out-of-equilibrium charge transport regime. Particle-based Full Band Monte Carlo device simulators allow an accurate description of this carrier dynamics at the nanoscale. This work initially compares GaN high electron

The drive towards device scaling and large output power in millimeter and sub-millimeter wave power amplifiers results in a highly non-linear, out-of-equilibrium charge transport regime. Particle-based Full Band Monte Carlo device simulators allow an accurate description of this carrier dynamics at the nanoscale. This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology, through a modeling approach that allows a fair comparison, indicating that the N-face devices exhibit improved performance with respect to Ga-face ones due to the natural back-barrier confinement that mitigates short-channel-effects. An investigation is then carried out on the minimum aspect ratio (i.e. gate length to gate-to-channel-distance ratio) that limits short channel effects in ultra-scaled GaN and InP HEMTs, indicating that this value in GaN devices is 15 while in InP devices is 7.5. This difference is believed to be related to the different dielectric properties of the two materials, and the corresponding different electric field distributions. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated, finding that the effective gate length is increased by fringing capacitances, enhanced by the dielectrics in regions adjacent to the gate for layers thicker than 5 nm, strongly affecting the frequency performance of deep sub-micron devices. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of mm-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a CellularMonte Carlo (CMC) code is self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this simulation approach is possible only due to the computational efficiency of the CMC, which uses pre-computed scattering tables. On the other hand, HB allows the direct simulation of the steady-state behavior of circuits with long transient time. This work provides an accurate and efficient tool for the device early-stage design, which allows a computerbased performance evaluation in lieu of the extremely time-consuming and expensive iterations of prototyping and experimental large-signal characterization.
ContributorsGuerra, Diego (Author) / Saraniti, Marco (Thesis advisor) / Ferry, David K. (Committee member) / Goodnick, Stephen M (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Recent changes in the energy markets structure combined with the conti-nuous load growth have caused power systems to be operated under more stressed conditions. In addition, the nature of power systems has also grown more complex and dynamic because of the increasing use of long inter-area tie-lines and the high

Recent changes in the energy markets structure combined with the conti-nuous load growth have caused power systems to be operated under more stressed conditions. In addition, the nature of power systems has also grown more complex and dynamic because of the increasing use of long inter-area tie-lines and the high motor loads especially those comprised mainly of residential single phase A/C motors. Therefore, delayed voltage recovery, fast voltage collapse and short term voltage stability issues in general have obtained significant importance in relia-bility studies. Shunt VAr injection has been used as a countermeasure for voltage instability. However, the dynamic and fast nature of short term voltage instability requires fast and sufficient VAr injection, and therefore dynamic VAr devices such as Static VAr Compensators (SVCs) and STATic COMpensators (STAT-COMs) are used. The location and size of such devices are optimized in order to improve their efficiency and reduce initial costs. In this work time domain dy-namic analysis was used to evaluate trajectory voltage sensitivities for each time step. Linear programming was then performed to determine the optimal amount of required VAr injection at each bus, using voltage sensitivities as weighting factors. Optimal VAr injection values from different operating conditions were weighted and averaged in order to obtain a final setting of the VAr requirement. Some buses under consideration were either assigned very small VAr injection values, or not assigned any value at all. Therefore, the approach used in this work was found to be useful in not only determining the optimal size of SVCs, but also their location.
ContributorsSalloum, Ahmed (Author) / Vittal, Vijay (Thesis advisor) / Heydt, Gerald (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2011
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Description
In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user

In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user to do that by keeping every parameter used to define a material, within the non-parabolic band approximation, a variable in the control of the user. A material is defined by defining its valleys, energies, valley effective masses and their directions. The types of scattering to be included can also be chosen. The non-parabolic band structure model is used. With the deployment of the generalized Monte Carlo tool onto www.nanoHUB.org the tool will be available to users around the world. This makes it a very useful educational tool that can be incorporated into curriculums. The tool is integrated with Rappture, to allow user-friendly access of the tool. The user can freely define a material in an easy systematic way without having to worry about the coding involved. The output results are automatically graphed and since the code incorporates an analytic band structure model, it is relatively fast. The versatility of the tool has been investigated and has produced results closely matching the experimental values for some common materials. The tool has been uploaded onto www.nanoHUB.org by integrating it with the Rappture interface. By using Rappture as the user interface, one can easily make changes to the current parameter sets to obtain even more accurate results.
ContributorsHathwar, Raghuraj (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Due to restructuring and open access to the transmission system, modern electric power systems are being operated closer to their operational limits. Additionally, the secure operational limits of modern power systems have become increasingly difficult to evaluate as the scale of the network and the number of transactions between utilities

Due to restructuring and open access to the transmission system, modern electric power systems are being operated closer to their operational limits. Additionally, the secure operational limits of modern power systems have become increasingly difficult to evaluate as the scale of the network and the number of transactions between utilities increase. To account for these challenges associated with the rapid expansion of electric power systems, dynamic equivalents have been widely applied for the purpose of reducing the computational effort of simulation-based transient security assessment. Dynamic equivalents are commonly developed using a coherency-based approach in which a retained area and an external area are first demarcated. Then the coherent generators in the external area are aggregated and replaced by equivalenced models, followed by network reduction and load aggregation. In this process, an improperly defined retained area can result in detrimental impacts on the effectiveness of the equivalents in preserving the dynamic characteristics of the original unreduced system. In this dissertation, a comprehensive approach has been proposed to determine an appropriate retained area boundary by including the critical generators in the external area that are tightly coupled with the initial retained area. Further-more, a systematic approach has also been investigated to efficiently predict the variation in generator slow coherency behavior when the system operating condition is subject to change. Based on this determination, the critical generators in the external area that are tightly coherent with the generators in the initial retained area are retained, resulting in a new retained area boundary. Finally, a novel hybrid dynamic equivalent, consisting of both a coherency-based equivalent and an artificial neural network (ANN)-based equivalent, has been proposed and analyzed. The ANN-based equivalent complements the coherency-based equivalent at all the retained area boundary buses, and it is designed to compensate for the discrepancy between the full system and the conventional coherency-based equivalent. The approaches developed have been validated on a large portion of the Western Electricity Coordinating Council (WECC) system and on a test case including a significant portion of the eastern interconnection.
ContributorsMa, Feng (Author) / Vittal, Vijay (Thesis advisor) / Tylavsky, Daniel (Committee member) / Heydt, Gerald (Committee member) / Si, Jennie (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2011
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Description
All-dielectric self-supporting (ADSS) fiber optic cables are used for data transfer by the utilities. They are installed along high voltage transmission lines. Dry band arcing, a phenomenon which is observed in outdoor insulators, is also observed in ADSS cables. The heat developed during dry band arcing damages the ADSS cables'

All-dielectric self-supporting (ADSS) fiber optic cables are used for data transfer by the utilities. They are installed along high voltage transmission lines. Dry band arcing, a phenomenon which is observed in outdoor insulators, is also observed in ADSS cables. The heat developed during dry band arcing damages the ADSS cables' outer sheath. A method is presented here to rate the cable sheath using the power developed during dry band arcing. Because of the small diameter of ADSS cables, mechanical vibration is induced in ADSS cable. In order to avoid damage, vibration dampers known as spiral vibration dampers (SVD) are used over these ADSS cables. These dampers are installed near the armor rods, where the presence of leakage current and dry band activity is more. The effect of dampers on dry band activity is investigated by conducting experiments on ADSS cable and dampers. Observations made from the experiments suggest that the hydrophobicity of the cable and damper play a key role in stabilizing dry band arcs. Hydrophobic-ity of the samples have been compared. The importance of hydrophobicity of the samples is further illustrated with the help of simulation results. The results indi-cate that the electric field increases at the edges of water strip. The dry band arc-ing phenomenon could thus be correlated to the hydrophobicity of the outer sur-face of cable and damper.
ContributorsPrabakar, Kumaraguru (Author) / Karady, George G. (Thesis advisor) / Vittal, Vijay (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2011
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Description
The high penetration of photovoltaic (PV) both at the utility and at the distribu-tion levels, has raised concerns about the reliability of grid-tied inverters of PV power systems. Inverters are generally considered as the weak link in PV power systems. The lack of a dedicated qualification/reliability standard for PV inverters

The high penetration of photovoltaic (PV) both at the utility and at the distribu-tion levels, has raised concerns about the reliability of grid-tied inverters of PV power systems. Inverters are generally considered as the weak link in PV power systems. The lack of a dedicated qualification/reliability standard for PV inverters is a main barrier in realizing higher level of confidence in reliability. Development of a well-accepted design qualification standard specifically for PV inverters will help pave the way for significant improvement in reliability and performance of inverters across the entire industry. The existing standards for PV inverters such as UL 1741 and IEC 62109-1 primarily focus on safety. IEC 62093 discusses inverter qualification but it includes all the balance of sys-tem components and therefore not specific to PV inverters. There are other general stan-dards for distributed generators including the IEEE1547 series of standards which cover major concerns like utility integration but they are not dedicated to PV inverters and are not written from a design qualification point of view. In this thesis, some of the potential requirements for a design qualification standard for PV inverters are addressed. The IEC 62093 is considered as a guideline and the possible inclusions in the framework for a dedicated design qualification standard of PV inverter are discussed. The missing links in existing PV inverter related standards are identified by performing gap analysis. Dif-ferent requirements of small residential inverters compared to large utility-scale systems, and the emerging requirements on grid support features are also considered. Electric stress test is found to be the key missing link and one of the electric stress tests, the surge withstand test is studied in detail. The use of the existing standards for surge withstand test of residential scale PV inverters is investigated and a method to suitably adopt these standards is proposed. The proposed method is studied analytically and verified using simulation. A design criterion for choosing the switch ratings of the inverter that can per-form reliably under the surge environment is derived.
ContributorsAlampoondi Venkataramanan, Sai Balasubramanian (Author) / Ayyanar, Raja (Thesis advisor) / Vittal, Vijay (Committee member) / Heydt, Gerald (Committee member) / Arizona State University (Publisher)
Created2011
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Description
High Voltage Direct Current (HVDC) technology is being considered for several long distance point-to-point overhead transmission lines, because of their lower losses and higher transmission capability, when compared to AC systems. Insulators are used to support and isolate the conductors mechanically and electrically. Composite insulators are gaining popularity for both

High Voltage Direct Current (HVDC) technology is being considered for several long distance point-to-point overhead transmission lines, because of their lower losses and higher transmission capability, when compared to AC systems. Insulators are used to support and isolate the conductors mechanically and electrically. Composite insulators are gaining popularity for both AC and DC lines, for the reasons of light weight and good performance under contaminated conditions. This research illustrates the electric potential and field computation on HVDC composite insulators by using the charge simulation method. The electric field is calculated under both dry and wet conditions. Under dry conditions, the field distributions along the insulators whose voltage levels range from 500 kV to 1200 kV are calculated and compared. The results indicate that the HVDC insulator produces higher electric field, when compared to AC insulator. Under wet conditions, a 500 kV insulator is modeled with discrete water droplets on the surface. In this case, the field distribution is affected by surface resistivity and separations between droplets. The corona effects on insulators are analyzed for both dry and wet conditions. Corona discharge is created, when electric field strength exceeds the threshold value. Corona and grading rings are placed near the end-fittings of the insulators to reduce occurrence of corona. The dimensions of these rings, specifically their radius, tube thickness and projection from end fittings are optimized. This will help the utilities design proper corona and grading rings to reduce the corona phenomena.
ContributorsHe, Jiahong (Author) / Gorur, Ravi S (Committee member) / Ayyanar, Raja (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2013
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Description
In modern electric power systems, energy management systems (EMSs) are responsi-ble for monitoring and controlling the generation system and transmission networks. State estimation (SE) is a critical `must run successful' component within the EMS software. This is dictated by the high reliability requirements and need to represent the closest real

In modern electric power systems, energy management systems (EMSs) are responsi-ble for monitoring and controlling the generation system and transmission networks. State estimation (SE) is a critical `must run successful' component within the EMS software. This is dictated by the high reliability requirements and need to represent the closest real time model for market operations and other critical analysis functions in the EMS. Tradi-tionally, SE is run with data obtained only from supervisory control and data acquisition (SCADA) devices and systems. However, more emphasis on improving the performance of SE drives the inclusion of phasor measurement units (PMUs) into SE input data. PMU measurements are claimed to be more accurate than conventional measurements and PMUs `time stamp' measurements accurately. These widely distributed devices meas-ure the voltage phasors directly. That is, phase information for measured voltages and currents are available. PMUs provide data time stamps to synchronize measurements. Con-sidering the relatively small number of PMUs installed in contemporary power systems in North America, performing SE with only phasor measurements is not feasible. Thus a hy-brid SE, including both SCADA and PMU measurements, is the reality for contemporary power system SE. The hybrid approach is the focus of a number of research papers. There are many practical challenges in incorporating PMUs into SE input data. The higher reporting rates of PMUs as compared with SCADA measurements is one of the salient problems. The disparity of reporting rates raises a question whether buffering the phasor measurements helps to give better estimates of the states. The research presented in this thesis addresses the design of data buffers for PMU data as used in SE applications in electric power systems. The system theoretic analysis is illustrated using an operating electric power system in the southwest part of the USA. Var-ious instances of state estimation data have been used for analysis purposes. The details of the research, results obtained and conclusions drawn are presented in this document.
ContributorsMurugesan, Veerakumar (Author) / Vittal, Vijay (Committee member) / Heydt, Gerald (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2013
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Description
This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in

This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in the channel increases, the influence of electromechanical coupling reduces as the electric field in the comprising layers reduces. A Monte Carlo device simulator that implements the theoretical model was developed to model the transport in GaN HEMTs. It is observed that with the coupled formulation, the drain current degradation in the device varies from 2%-18% depending on the gate voltage. Degradation reduces with the increase in the gate voltage due to the increase in the electron gas density in the channel. The output and transfer characteristics match very well with the experimental data. An electro-thermal device simulator was developed coupling the Monte Caro-Poisson solver with the energy balance solver for acoustic and optical phonons. An output current degradation of around 2-3 % at a drain voltage of 5V due to self-heating was observed. It was also observed that the electrostatics near the gate to drain region of the device changes due to the hot spot created in the device from self heating. This produces an electric field in the direction of accelerating the electrons from the channel to surface states. This will aid to the current collapse phenomenon in the device. Thus, the electric field in the gate to drain region is very critical for reliable performance of the device. Simulations emulating the charging of the surface states were also performed and matched well with experimental data. Methods to improve the reliability performance of the device were also investigated in this work. A shield electrode biased at source potential was used to reduce the electric field in the gate to drain extension region. The hot spot position was moved away from the critical gate to drain region towards the drain as the shield electrode length and dielectric thickness were being altered.
ContributorsPadmanabhan, Balaji (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Alford, Terry L. (Committee member) / Venkatraman, Prasad (Committee member) / Arizona State University (Publisher)
Created2013