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Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change

The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. Furthermore, ZnO is a potential material for transparent conducting oxide material competing with indium tin oxide (ITO), graphene, and carbon nanotube film. It has been known as a conductive material when doped with elements such as

Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. Furthermore, ZnO is a potential material for transparent conducting oxide material competing with indium tin oxide (ITO), graphene, and carbon nanotube film. It has been known as a conductive material when doped with elements such as indium, gallium and aluminum. The solubility of those dopant elements in ZnO is still debatable; but, it is necessary to find alternative conducting materials when their form is film or nanostructure for display devices. This is a consequence of the ever increasing price of indium. In addition, a new generation solar cell (nanostructured or hybrid photovoltaics) requires compatible materials which are capable of free standing on substrates without seed or buffer layers and have the ability introduce electrons or holes pathway without blocking towards electrodes. The nanostructures for solar cells using inorganic materials such as silicon (Si), titanium oxide (TiO2), and ZnO have been an interesting topic for research in solar cell community in order to overcome the limitation of efficiency for organic solar cells. This dissertation is a study of the rational solution-based synthesis of 1-dimentional ZnO nanomaterial and its solar cell applications. These results have implications in cost effective and uniform nanomanufacturing for the next generation solar cells application by controlling growth condition and by doping transition metal element in solution.
ContributorsChoi, Hyung Woo (Author) / Alford, Terry L. (Thesis advisor) / Krause, Stephen (Committee member) / Theodore, N. David (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Ball Grid Array (BGA) using lead-free or lead-rich solder materials are widely used as Second Level Interconnects (SLI) in mounting packaged components to the printed circuit board (PCB). The reliability of these solder joints is of significant importance to the performance of microelectronics components and systems. Product design/form-factor, solder material,

Ball Grid Array (BGA) using lead-free or lead-rich solder materials are widely used as Second Level Interconnects (SLI) in mounting packaged components to the printed circuit board (PCB). The reliability of these solder joints is of significant importance to the performance of microelectronics components and systems. Product design/form-factor, solder material, manufacturing process, use condition, as well as, the inherent variabilities present in the system, greatly influence product reliability. Accurate reliability analysis requires an integrated approach to concurrently account for all these factors and their synergistic effects. Such an integrated and robust methodology can be used in design and development of new and advanced microelectronics systems and can provide significant improvement in cycle-time, cost, and reliability. IMPRPK approach is based on a probabilistic methodology, focusing on three major tasks of (1) Characterization of BGA solder joints to identify failure mechanisms and obtain statistical data, (2) Finite Element analysis (FEM) to predict system response needed for life prediction, and (3) development of a probabilistic methodology to predict the reliability, as well as, the sensitivity of the system to various parameters and the variabilities. These tasks and the predictive capabilities of IMPRPK in microelectronic reliability analysis are discussed.
ContributorsFallah-Adl, Ali (Author) / Tasooji, Amaneh (Thesis advisor) / Krause, Stephen (Committee member) / Alford, Terry (Committee member) / Jiang, Hanqing (Committee member) / Mahajan, Ravi (Committee member) / Arizona State University (Publisher)
Created2013
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Description
III-Nitride nanostructures have been an active area of research recently due to their ability to tune their optoelectronic properties. Thus far work has been done on InGaN quantum dots, nanowires, nanopillars, amongst other structures, but this research reports the creation of a new type of InGaN nanostructure, nanorings. Hexagonal InGaN

III-Nitride nanostructures have been an active area of research recently due to their ability to tune their optoelectronic properties. Thus far work has been done on InGaN quantum dots, nanowires, nanopillars, amongst other structures, but this research reports the creation of a new type of InGaN nanostructure, nanorings. Hexagonal InGaN nanorings were formed using Metal Organic Chemical Vapor Deposition through droplet epitaxy. The nanorings were thoroughly analyzed using x-ray diffraction, photoluminescence, electron microscopy, electron diffraction, and atomic force microscopy. Nanorings with high indium incorporation were achieved with indium content up to 50% that was then controlled using the growth time, temperature, In/Ga ratio and III/N ratio. The analysis showed that the nanoring shape is able to incorporate more indium than other nanostructures, due to the relaxing mechanism involved in the formation of the nanoring. The ideal conditions were determined to be growth of 30 second droplets with a growth time of 1 minute 30 seconds at 770 C to achieve the most well developed rings with the highest indium concentration.
ContributorsZaidi, Zohair (Author) / Mahajan, Subhash (Thesis advisor) / O'Connell, Michael J (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Students may use the technical engineering terms without knowing what these words mean. This creates a language barrier in engineering that influences student learning. Previous research has been conducted to characterize the difference between colloquial and scientific language. Since this research had not yet been applied explicitly to engineering, conclusions

Students may use the technical engineering terms without knowing what these words mean. This creates a language barrier in engineering that influences student learning. Previous research has been conducted to characterize the difference between colloquial and scientific language. Since this research had not yet been applied explicitly to engineering, conclusions from the area of science education were used instead. Various researchers outlined strategies for helping students acquire scientific language. However, few examined and quantified the relationship it had on student learning. A systemic functional linguistics framework was adopted for this dissertation which is a framework that has not previously been used in engineering education research. This study investigated how engineering language proficiency influenced conceptual understanding of introductory materials science and engineering concepts. To answer the research questions about engineering language proficiency, a convenience sample of forty-one undergraduate students in an introductory materials science and engineering course was used. All data collected was integrated with the course. Measures included the Materials Concept Inventory, a written engineering design task, and group observations. Both systemic functional linguistics and mental models frameworks were utilized to interpret data and guide analysis. A series of regression analyses were conducted to determine if engineering language proficiency predicts group engineering term use, if conceptual understanding predicts group engineering term use, and if conceptual understanding predicts engineering language proficiency. Engineering academic language proficiency was found to be strongly linked to conceptual understanding in the context of introductory materials engineering courses. As the semester progressed, this relationship became even stronger. The more engineering concepts students are expected to learn, the more important it is that they are proficient in engineering language. However, exposure to engineering terms did not influence engineering language proficiency. These results stress the importance of engineering language proficiency for learning, but warn that simply exposing students to engineering terms does not promote engineering language proficiency.
ContributorsKelly, Jacquelyn (Author) / Baker, Dale (Thesis advisor) / Ganesh, Tirupalavanam G. (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2012
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Description
This report will review the mechanical and microstructural properties of the refractory element rhenium (Re) deposited using Laser Additive Manufacturing (LAM). With useable structural strength over 2200 °C, existing applications up to 2760 °C, very high strength, ductility and chemical resistance, interest in Re is understandable. This study includes data

This report will review the mechanical and microstructural properties of the refractory element rhenium (Re) deposited using Laser Additive Manufacturing (LAM). With useable structural strength over 2200 °C, existing applications up to 2760 °C, very high strength, ductility and chemical resistance, interest in Re is understandable. This study includes data about tensile properties including tensile data up to 1925 °C, fracture modes, fatigue and microstructure including deformation systems and potential applications of that information. The bulk mechanical test data will be correlated with nanoindentation and crystallographic examination. LAM properties are compared to the existing properties found in the literature for other manufacturing processes. The literature indicates that Re has three significant slip systems but also twins as part of its deformation mechanisms. While it follows the hcp metal characteristics for deformation, it has interesting and valuable extremes such as high work hardening, potentially high strength, excellent wear resistance and superior elevated temperature strength. These characteristics are discussed in detail.
ContributorsAdams, Robbie (Author) / Chawla, Nikhilesh (Thesis advisor) / Adams, James (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2012
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Description
To supplement lectures, various resources are available to students; however, little research has been done to look systematically at which resources studies find most useful and the frequency at which they are used. We have conducted a preliminary study looking at various resources available in an introductory material science course

To supplement lectures, various resources are available to students; however, little research has been done to look systematically at which resources studies find most useful and the frequency at which they are used. We have conducted a preliminary study looking at various resources available in an introductory material science course over four semesters using a custom survey called the Student Resource Value Survey (SRVS). More specifically, the SRVS was administered before each test to determine which resources students use to do well on exams. Additionally, over the course of the semester, which resources students used changed. For instance, study resources for exams including the use of homework problems decreased from 81% to 50%, the utilization of teaching assistant for exam studying increased from 25% to 80%, the use of in class Muddiest Points for exam study increased form 28% to 70%, old exams and quizzes only slightly increased for exam study ranging from 78% to 87%, and the use of drop-in tutoring services provided to students at no charge decreased from 25% to 17%. The data suggest that students thought highly of peer interactions by using those resources more than tutoring centers. To date, no research has been completed looking at courses at the department level or a different discipline. To this end, we adapted the SRVS administered in material science to investigate resource use in thirteen biomedical engineering (BME) courses. Here, we assess the following research question: "From a variety of resources, which do biomedical engineering students feel addresses difficult concept areas, prepares them for examinations, and helps in computer-aided design (CAD) and programming the most and with what frequency?" The resources considered include teaching assistants, classroom notes, prior exams, homework problems, Muddiest Points, office hours, tutoring centers, group study, and the course textbook. Results varied across the four topical areas: exam study, difficult concept areas, CAD software, and math-based programming. When preparing for exams and struggling with a learning concept, the most used and useful resources were: 1) homework problems, 2) class notes and 3) group studying. When working on math-based programming (Matlab and Mathcad) as well as computer-aided design, the most used and useful resources were: 1) group studying, 2) engineering tutoring center, and 3) undergraduate teaching assistants. Concerning learning concepts and exams in the BME department, homework problems and class notes were considered some of the highest-ranking resources for both frequency and usefulness. When comparing to the pilot study in MSE, both BME and MSE students tend to highly favor peer mentors and old exams as a means of studying for exams at the end of the semester1. Because the MSE course only considered exams, we cannot make any comparisons to BME data concerning programming and CAD. This analysis has highlighted potential resources that are universally beneficial, such as the use of peer work, i.e. group studying, engineering tutoring center, and teaching assistants; however, we see differences by both discipline and topical area thereby highlighting the need to determine important resources on a class-by-class basis as well.
ContributorsMalkoc, Aldin (Author) / Ankeny, Casey (Thesis director) / Krause, Stephen (Committee member) / Harrington Bioengineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
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Description
The focus of education in the classroom traditionally is one of fact memorization and recall. The teaching process of linear knowledge progression is not always in tune with the way that the human brain actually processes, conceptualizes, and comprehends concepts and information. In an introductory engineering class, focused on materials

The focus of education in the classroom traditionally is one of fact memorization and recall. The teaching process of linear knowledge progression is not always in tune with the way that the human brain actually processes, conceptualizes, and comprehends concepts and information. In an introductory engineering class, focused on materials engineering and its related concepts, a system of lecture interventions has been put in place to increase concept comprehension by supplementing lecture units with various activities, from additional worksheets, explicit concept discussions, and most recently, YouTube videos showcasing specific concepts and situations. In an attempt to correct the lack of actual concept comprehension, these interventions seek to interact with the human mind in a way that capitalizes on its ability to process and interpret non-linear knowledge and information.

Using a concept test given prior to the lecture unit, and after, the difference in scores is used to recognize if the concepts presented have actually been comprehended. Used specifically in a lecture unit on solubility and solutions, the concept test tested student’s knowledge of supersaturated, saturated, and unsaturated solutions. With a visual identification and a written explanation, the student’s ability to identify and explain the three solutions was tested.

In order to determine the cause of the change in score from pre- to post-test, an analysis of the change in scores and the effects of question type and solution type was conducted. The significant results are as follows:
 The change in score from pre- to post-test was found to be significant, with the only difference between the two tests being the lecture unit and intervention
 From pre- to post-test, solution type had a significant effect on the score, with the unsaturated solution being the most easily recognized and explained solution type
 Students that felt that the YouTube videos greatly increased their concept comprehension, on average, performed better than their counterparts and also saw a greater increase their score from pre- to post-test
ContributorsLinich, Christopher Graham (Author) / Krause, Stephen (Thesis director) / Middleton, James (Committee member) / Barrett, The Honors College (Contributor) / Mechanical and Aerospace Engineering Program (Contributor)
Created2014-05
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Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the

The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
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Description
With the progression of different industries moving away from employing secretaries for business professionals and professors, there exists a void in the area of personal assistance. This problem has existing solutions readily available to replace this service, i.e. secretary or personal assistant, tend to range from expensive and useful to

With the progression of different industries moving away from employing secretaries for business professionals and professors, there exists a void in the area of personal assistance. This problem has existing solutions readily available to replace this service, i.e. secretary or personal assistant, tend to range from expensive and useful to inexpensive and not efficient. This leaves a low cost niche into the market of a virtual office assistant or manager to display messages and to help direct people in obtaining contact information. The development of a low cost solution revolves around the software needed to solve the various problems an accessible and user friendly Virtual Interface in which the owner of the Virtual Office Manager/Assistant can communicate to colleagues who are at standby outside of the owner's office and vice versa. This interface will be allowing the owner to describe the status pertaining to their absence or any other message sent to the interface. For example, the status of the owner's work commute can be described with a simple "Running Late" phrase or a message like "Busy come back in 10 minutes". In addition, any individual with an interest to these entries will have the opportunity to respond back because the device will provide contact information. When idle, the device will show supplemental information such as the owner's calendar and name. The scope of this will be the development and testing of solutions to achieve these goals.
ContributorsOffenberger, Spencer Eliot (Author) / Kozicki, Michael (Thesis director) / Goryll, Michael (Committee member) / Electrical Engineering Program (Contributor) / Computer Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12