Matching Items (30)
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- All Subjects: engineering
- Creators: Goryll, Michael
Description
The price based marketplace has dominated the construction industry. The majority of owners use price based practices of management (expectation and decision making, control, direction, and inspection.) The price based/management and control paradigm has not worked. Clients have now been moving toward the best value environment (hire contractors who know what they are doing, who preplan, and manage and minimize risk and deviation.) Owners are trying to move from client direction and control to hiring an expert and allowing them to do the quality control/risk management. The movement of environments changes the paradigm for the contractors from a reactive to a proactive, from a bureaucratic
on-accountable to an accountable position, from a relationship based
on-measuring to a measuring entity, and to a contractor who manages and minimizes the risk that they do not control. Years of price based practices have caused poor quality and low performance in the construction industry. This research identifies what is a best value contractor or vendor, what factors make up a best value vendor, and the methodology to transform a vendor to a best value vendor. It will use deductive logic, a case study to confirm the logic and the proposed methodology.
on-accountable to an accountable position, from a relationship based
on-measuring to a measuring entity, and to a contractor who manages and minimizes the risk that they do not control. Years of price based practices have caused poor quality and low performance in the construction industry. This research identifies what is a best value contractor or vendor, what factors make up a best value vendor, and the methodology to transform a vendor to a best value vendor. It will use deductive logic, a case study to confirm the logic and the proposed methodology.
ContributorsPauli, Michele (Author) / Kashiwagi, Dean (Thesis advisor) / Sullivan, Kenneth (Committee member) / Badger, William (Committee member) / Arizona State University (Publisher)
Created2011
Description
As global competition continues to grow more disruptive, organizational change is an ever-present reality that affects companies in all industries at both the operational and strategic level. Organizational change capabilities have become a necessary aspect of existence for organizations in all industries worldwide. Research suggests that more than half of all organizational change efforts fail to achieve their original intended results, with some studies quoting failure rates as high as 70 percent. Exasperating this problem is the fact that no single change methodology has been universally accepted. This thesis examines two aspect of organizational change: the implementation of tactical and strategic initiatives, primarily focusing on successful tactical implementation techniques. This research proposed that tactical issues typically dominate the focus of change agents and recipients alike, often to the detriment of strategic level initiatives that are vital to the overall value and success of the organizational change effort. The Delphi method was employed to develop a tool to facilitate the initial implementation of organizational change such that tactical barriers were minimized and available resources for strategic initiatives were maximized. Feedback from two expert groups of change agents and change facilitators was solicited to develop the tool and evaluate its impact. Preliminary pilot testing of the tool confirmed the proposal and successfully served to minimize tactical barriers to organizational change.
ContributorsLines, Brian (Author) / Sullivan, Kenneth T. (Thesis advisor) / Badger, William (Committee member) / Kashiwagi, Dean (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT Facility managers have an important job in today's competitive business world by caring for the backbone of the corporation's capital. Maintaining assets and the support efforts cause facility managers to fight an uphill battle to prove the worth of their organizations. This thesis will discuss the important and flexible use of measurement and leadership reports and the benefits of justifying the work required to maintain or upgrade a facility. The task is streamlined by invoking accountability to subject experts. The facility manager must trust in the ability of his or her work force to get the job done. However, with accountability comes increased risk. Even though accountability may not alleviate total control or cease reactionary actions, facility managers can develop key leadership based reports to reassign accountability and measure subject matter experts while simultaneously reducing reactionary actions leading to increased cost. Identifying and reassigning risk that are not controlled to subject matter experts is imperative for effective facility management leadership and allows facility managers to create an accurate and solid facility management plan, supports the organization's succession plan, and allows the organization to focus on key competencies.
ContributorsTellefsen, Thor (Author) / Sullivan, Kenneth (Thesis advisor) / Kashiwagi, Dean (Committee member) / Badger, William (Committee member) / Arizona State University (Publisher)
Created2011
Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Over the past couple of decades, quality has been an area of increased focus. Multiple models and approaches have been proposed to measure the quality in the construction industry. This paper focuses on determining the quality of one of the types of roofing systems used in the construction industry, i.e. Sprayed Polyurethane Foam Roofs (SPF roofs). Thirty seven urethane coated SPF roofs that were installed in 2005 / 2006 were visually inspected to measure the percentage of blisters and repairs three times over a period of 4 year, 6 year and 7 year marks. A repairing criteria was established after a 6 year mark based on the data that were reported to contractors as vulnerable roofs. Furthermore, the relation between four possible contributing time of installation factors i.e. contractor, demographics, season, and difficulty (number of penetrations and size of the roof in square feet) that could affect the quality of the roof was determined. Demographics and difficulty did not affect the quality of the roofs whereas the contractor and the season when the roof was installed did affect the quality of the roofs.
ContributorsGajjar, Dhaval (Author) / Kashiwagi, Dean (Thesis advisor) / Sullivan, Kenneth (Committee member) / Badger, William (Committee member) / Arizona State University (Publisher)
Created2013
Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
Description
With the progression of different industries moving away from employing secretaries for business professionals and professors, there exists a void in the area of personal assistance. This problem has existing solutions readily available to replace this service, i.e. secretary or personal assistant, tend to range from expensive and useful to inexpensive and not efficient. This leaves a low cost niche into the market of a virtual office assistant or manager to display messages and to help direct people in obtaining contact information. The development of a low cost solution revolves around the software needed to solve the various problems an accessible and user friendly Virtual Interface in which the owner of the Virtual Office Manager/Assistant can communicate to colleagues who are at standby outside of the owner's office and vice versa. This interface will be allowing the owner to describe the status pertaining to their absence or any other message sent to the interface. For example, the status of the owner's work commute can be described with a simple "Running Late" phrase or a message like "Busy come back in 10 minutes". In addition, any individual with an interest to these entries will have the opportunity to respond back because the device will provide contact information. When idle, the device will show supplemental information such as the owner's calendar and name. The scope of this will be the development and testing of solutions to achieve these goals.
ContributorsOffenberger, Spencer Eliot (Author) / Kozicki, Michael (Thesis director) / Goryll, Michael (Committee member) / Electrical Engineering Program (Contributor) / Computer Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
Description
The construction industry in India suffers from major time and cost overruns. Data from government and industry reports suggest that projects suffer from 20 to 25 percent time and cost overruns. Waste of resources has been identified as a major source of inefficiency. Despite a substantial increase in the past few years, demand for professionals and contractors still exceeds supply by a large margin. The traditional methods adopted in the Indian construction industry may not suffice the needs of this dynamic environment, as they have produced large inefficiencies. Innovative ways of procurement and project management can satisfy the needs aspired to as well as bring added value. The problems faced by the Indian construction industry are very similar to those faced by other developing countries. The objective of this paper is to discuss and analyze the economic concerns, inefficiencies and investigate a model that both explains the Indian construction industry structure and provides a framework to improve efficiencies. The Best Value (BV) model is examined as an approach to be adopted in lieu of the traditional approach. This could result in efficient construction projects by minimizing cost overruns and delays, which until now have been a rarity.
ContributorsNihas, Syed (Author) / Kashiwagi, Dean (Thesis advisor) / Sullivan, Kenneth (Committee member) / Kashiwagi, Jacob (Committee member) / Arizona State University (Publisher)
Created2013
Description
In-field characterization of photovoltaics is crucial to understanding performance and degradation mechanisms, subsequently improving overall reliability and lifespans. Current outdoor characterization is often limited by logistical difficulties, variable weather, and requirements to measure during peak production hours. It becomes a challenge to find a characterization technique that is affordable with a low impact on system performance while still providing useful device parameters. For added complexity, this characterization technique must have the ability to scale for implementation in large powerplant applications. This dissertation addresses some of the challenges of outdoor characterization by expanding the knowledge of a well-known indoor technique referred to as Suns-VOC. Suns-VOC provides a pseudo current-voltage curve that is free of any effects from series resistance. Device parameters can be extracted from this pseudo I-V curve, allowing for subsequent degradation analysis. This work introduces how to use Suns-VOC outdoors while normalizing results based on the different effects of environmental conditions. This technique is validated on single-cells, modules, and small arrays with accuracies capable of measuring yearly degradation. An adaptation to Suns-VOC, referred to as Suns-Voltage-Resistor (Suns-VR), is also introduced to complement the results from Suns-VOC. This work can potentially be used to provide a diagnostic tool for outdoor characterization in various applications, including residential, commercial, and industrial PV systems.
ContributorsKillam, Alexander Cameron (Author) / Bowden, Stuart G (Thesis advisor) / Goryll, Michael (Committee member) / Augusto, Andre (Committee member) / Rand, James (Committee member) / Arizona State University (Publisher)
Created2022
Description
To keep up with the increasing demand for solar energy, higher efficiencies are necessary while keeping cost at a minimum. The easiest theoretical way to achieve that is using silicon-based multi-junction solar cells. However, there are major challenges in effectively implementing such a system. Much work has been done recently to integrate III-V with Si for multi-junction solar cell purposes. The focus of this paper is to explore GaP-based dilute nitrides as a possible top cell candidate for Si-based multi-junctions. The direct growth of dilute nitrides in a lattice-matched configuration epitaxially in literature is reviewed. The problems associated with such growths are outlined and pathways to mitigate these problems are presented. The need for a GaP buffer layer between the dilute nitride film and Si is established. Defects in GaP/Si system are explored in detail and a study on pit formation during such growth is performed. Effective suppression of pits in GaP surface grown on Si is achieved. Issues facing GaP-based dilute nitrides in terms of material properties are outlined. Review of these challenges is done and some possible future areas of interest to improve material quality are established. Finally, the growth process of dilute nitrides using Molecular Beam Epitaxy tool is explained. Results for GaNP grown on Si pre and post growth treatments are detailed.
ContributorsMurali, Srinath (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / King, Richard (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2022