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Description
As the 3rd generation solar cell, quantum dot solar cells are expected to outperform the first 2 generations with higher efficiency and lower manufacture cost. Currently the main problems for QD cells are the low conversion efficiency and stability. This work is trying to improve the reliability as well as the device performance by inserting an interlayer between the metal cathode and the active layer. Titanium oxide and a novel nitrogen doped titanium oxide were compared and TiOxNy capped device shown a superior performance and stability to TiOx capped one. A unique light anneal effect on the interfacial layer was discovered first time and proved to be the trigger of the enhancement of both device reliability and efficiency. The efficiency was improved by 300% and the device can retain 73.1% of the efficiency with TiOxNy when normal device completely failed after kept for long time. Photoluminescence indicted an increased charge disassociation rate at TiOxNy interface. External quantum efficiency measurement also inferred a significant performance enhancement in TiOxNy capped device, which resulted in a higher photocurrent. X-ray photoelectron spectrometry was performed to explain the impact of light doping on optical band gap. Atomic force microscopy illustrated the effect of light anneal on quantum dot polymer surface. The particle size is increased and the surface composition is changed after irradiation. The mechanism for performance improvement via a TiOx based interlayer was discussed based on a trap filling model. Then Tunneling AFM was performed to further confirm the reliability of interlayer capped organic photovoltaic devices. As a powerful tool based on SPM technique, tunneling AFM was able to explain the reason for low efficiency in non-capped inverted organic photovoltaic devices. The local injection properties as well as the correspondent topography were compared in organic solar cells with or without TiOx interlayer. The current-voltage characteristics were also tested at a single interested point. A severe short-circuit was discovered in non capped devices and a slight reverse bias leakage current was also revealed in TiOx capped device though tunneling AFM results. The failure reason for low stability in normal devices was also discussed comparing to capped devices.
ContributorsYu, Jialin (Author) / Jabbour, Ghassan E. (Thesis advisor) / Alford, Terry L. (Thesis advisor) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
The goal of this work is to develop low cost and highly efficient hybrid solar cells based on semiconductor nanoparticles (NPs). Hybrid solar cells have been demonstrated to take advantages of both inorganic and organic semiconductors by employing simple soluble process. In order to improve the power conversion efficiency (PCE), the bulk heterojunction (BHJ) of cadmium selenide (CdSe) tetrapods (TPs) and poly (3-hexylthiophene) (P3HT) are introduced as an electron acceptor and donor, respectively. The dimension of CdSe TPs and the 3D spatial distribution of CdSe TPs:P3HT photoactive blends are investigated to improve optical and electrical properties of photovoltaic devices. Hybrid solar cells having long-armed CdSe TPs and P3HT establish higher PCE of 1.12% when compared to device employing short-armed TPs of 0.80%. The device performance are improved by using longer armed CdSe TPs, which aids in better percolation connectivity and reduced charge hopping events, thus leading to better charge transport. The device architecture of hybrid solar cells is examined to assist vertical phase separation (VPS). Improvement of VPS in hybrid solar cells using CdSe TPs:P3HT photoactive blends is systematically manipulated by solution processed interfacial layers, resulting in enhanced device performance. Multi-layered hybrid solar cells assist better light absorption, efficient charge carrier transport, and increase of the surface contact area. In this work, hole transport assisting layer (HTAL)/BHJ photoactive layer (BPL)/electron transport assisting layer (ETAL) or HTAL/BPL/ETAL (HBE) multi-layered structure is introduced, similarly to p-type layer/intermixed photoactive layer
-type layer (p-i-n) structure of organic photovoltaic devices. To further control the improvement of the device performance, the effects of nano-scale morphology from solvents having different boiling points, the various shapes of semiconductor NPs, and the emergence of blending NPs are demonstrated. The formation of favorable 3D networks in photoactive layer is attributed to enhance the efficient charge transport by the optimized combination of semiconductor NPs in polymer matrix.
-type layer (p-i-n) structure of organic photovoltaic devices. To further control the improvement of the device performance, the effects of nano-scale morphology from solvents having different boiling points, the various shapes of semiconductor NPs, and the emergence of blending NPs are demonstrated. The formation of favorable 3D networks in photoactive layer is attributed to enhance the efficient charge transport by the optimized combination of semiconductor NPs in polymer matrix.
ContributorsLee, Kyu Sung (Author) / Jabbour, Ghassan E. (Thesis advisor) / Alford, Terry (Thesis advisor) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2012