Matching Items (2)
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Description
GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction were demonstrated. In the TPV application, high

GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction were demonstrated. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. Different PDBC fabrication processes with SU-8 and SiO2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency was explored. GaAs SU-8 PDBC TPV devices with 2200°C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively were demonstrated. This was 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with a front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicated the front grid induced light scattering led to additional parasitic absorption in the TPV device. For higher contact coverage fractions, the PDBC reflectance cannot, in general, be treated by linear interpolation of the mirror and point-contact areas using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D. GaAs PDBC TPV device with series resistance less than 10 mΩ·cm2 was demonstrated. Finally, GaAs PDBC TPV device with 22.8% TPV efficiency measured in a thermophotovoltaic test platform with the thermal emitter at 2100℃ was demonstrated
ContributorsArulanandam, Madhan Kumar (Author) / King, Richard R. (Thesis advisor) / Steiner, Myles A. (Committee member) / Newman, Nathan (Committee member) / Honsberg, Christiana (Committee member) / Arizona State University (Publisher)
Created2022
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Description
Solar photovoltaic (PV) industry is tipped to be one of the front-runners in the renewable industry. Typically, PV module manufacturers provide a linear or step warranty of 80% of original power over 25 years. This power loss during the field exposure is primarily attributed to the development of performance affecting

Solar photovoltaic (PV) industry is tipped to be one of the front-runners in the renewable industry. Typically, PV module manufacturers provide a linear or step warranty of 80% of original power over 25 years. This power loss during the field exposure is primarily attributed to the development of performance affecting defects in the PV modules. As many as 86 different defects can occur in a PV module. One of the major defects that can cause significant power loss is the interconnect metallization system (IMS) degradation which is the focus of this thesis. The IMS is composed of cell-interconnect (cell-ribbon interconnect) and string-interconnect (ribbon-ribbon interconnect). The cell interconnect is in turn composed of silver metallization (fingers and busbars) and solder bonds between silver busbar and copper ribbon. Weak solder bonding between copper ribbon and busbar of a cell results in increase of series resistance that in turn affects the fill factor causing a power drop. In this thesis work, the results obtained from various non-destructive and destructive experiments performed on modules exposed in three different climates (Arizona - Hot and Dry, Mexico - Warm and Humid, and California - Temperate) are presented. These experiments include light I-V measurements, dark I-V measurements, infrared imaging, extraction of test samples from the modules, peel strength measurements and four-point resistance measurements. The extraction of test samples was performed using a mechanical method and a chemical method. The merits and demerits of these two methods are presented. A drop of 10.33% in fill factor was observed for a 0.05Ω increase in the series resistance of the modules investigated in this work. Different combinations in a cell that can cause series resistance increase were considered and their effect on fill factor were observed using four-point probe experiments. Peel test experiments were conducted to correlate the effect of series resistance on the ribbon peel strength. Finally, climate specific thermal modelling was performed for 4 different sites over 20 years in order to calculate the accumulated thermal fatigue and also to evaluate its correlation, if any, with the increase of series resistance.
ContributorsTummala, Abhishiktha (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Phelan, Patrick (Thesis advisor) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2016