The pseudo-binary alloy of indium((x))gallium((1-x))nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and film growth, the authors investigate the use of InxGa1-xN as an active layer in an induced junction. In an induced junction, electrostatics are used to create strong band bending at the surface of a doped material and invert the bands. The authors report modeling results, as well as preliminary film quality experiments for an induced junction in InGaN by space charge effects of neighboring materials, piezoelectric effects, and spontaneous polarization. (C) 2013 American Vacuum Society.
Details
- Inducing a Junction in n-Type InxGa(1-x)N
- Williams, Joshua (Author)
- Williamson, Todd L. (Author)
- Hoffbauer, Mark A. (Author)
- Fischer, Alec M. (Author)
- Goodnick, Stephen (Author)
- Faleev, Nikolai (Author)
- Ghosh, Kunal (Author)
- Honsberg, Christiana (Author)
- Ira A. Fulton Schools of Engineering (Contributor)
- Digital object identifier: 10.1116/1.4797489
- Identifier TypeInternational standard serial numberIdentifier Value1365-2966
- Identifier TypeInternational standard serial numberIdentifier Value0035-8711
- Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Vacuum Science & Technology B, 31(3), 03C127 and may be found at http://avspublications.org/jvstb/resource/1/jvtbd9/v31/i3/p03C127_s1, opens in a new window.
Citation and reuse
Cite this item
This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.
Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Fischer, A. M., Goodnick, S. M., Faleev, N. N., . . . Honsberg, C. B. (2013). Inducing a junction in n-type InxGa(1-x)N. Journal of Vacuum Science & Technology B, 31(3), 03C127. doi:10.1116/1.4797489