Interstitial impurity atoms can significantly alter the chemical and physical properties of the host material. Oxygen impurity in HCP titanium is known to have a considerable strengthening effect mainly through interactions with dislocations. To better understand such an effect, first the role of oxygen on various slip planes in titanium is examined using generalized stacking fault energies (GSFE) computed by the first principles calculations. It is shown that oxygen can significantly increase the energy barrier to dislocation motion on most of the studied slip planes.
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- Doctoral Dissertation Mechanical Engineering 2018