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In recent years, there has been increased interest in the Indium Gallium Nitride (InGaN) material system for photovoltaic (PV) applications. The InGaN alloy system has demonstrated high performance for high

In recent years, there has been increased interest in the Indium Gallium Nitride (InGaN) material system for photovoltaic (PV) applications. The InGaN alloy system has demonstrated high performance for high frequency power devices, as well as for optical light emitters. This material system is also promising for photovoltaic applications due to broad range of bandgaps of InxGa1-xN alloys from 0.65 eV (InN) to 3.42 eV (GaN), which covers most of the electromagnetic spectrum from ultraviolet to infrared wavelengths.

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    Date Created
    • 2017
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    • Partial requirement for: Ph.D., Arizona State University, 2017
      Note type
      thesis
    • Includes bibliographical references (pages 83-87)
      Note type
      bibliography
    • Field of study: Physics

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    by Yi Fang

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