Description

CMOS Technology has been scaled down to 7 nm with FinFET replacing planar MOSFET devices. Due to short channel effects, the FinFET structure was developed to provide better electrostatic control

CMOS Technology has been scaled down to 7 nm with FinFET replacing planar MOSFET devices. Due to short channel effects, the FinFET structure was developed to provide better electrostatic control on subthreshold leakage and saturation current over planar MOSFETs while having the desired current drive.

Reuse Permissions
  • 2.05 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2017
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Masters Thesis Electrical Engineering 2017

    Machine-readable links