Description

This PhD thesis consists of three main themes. The first part focusses on modeling of Silver (Ag)-Chalcogenide glass based resistive memory devices known as the Programmable Metallization Cell (PMC). The

This PhD thesis consists of three main themes. The first part focusses on modeling of Silver (Ag)-Chalcogenide glass based resistive memory devices known as the Programmable Metallization Cell (PMC). The proposed models are examined with the Technology Computer Aided Design (TCAD) simulations. In order to find a relationship between electrochemistry and carrier-trap statistics in chalcogenide glass films, an analytical mapping for electron trapping is derived. Then, a physical-based model is proposed in order to explain the dynamic behavior of the photodoping mechanism in lateral PMCs.

Reuse Permissions
  • 2.43 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2017
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Doctoral Dissertation Electrical Engineering 2017

    Machine-readable links