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Nanowires are 1D rod-like structures which are regarded as the basis for future technologies. III-V nanowires have attracted immense attention because of their stability, crystal quality and wide

Nanowires are 1D rod-like structures which are regarded as the basis for future technologies. III-V nanowires have attracted immense attention because of their stability, crystal quality and wide use. In this work, I focus on the growth and characterization of III-V semiconductor nanowires, in particular GaP, InP and InGaP alloys. These nanowires were grown using a hot wall CVD(Chemical Vapor Deposition) setup and are characterized using SEM (Scanning Electron Microscope), EDX (Energy Dispersive X-ray Spectroscopy) and PL (Photoluminescence) techniques.

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    Date Created
    • 2016
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  • Text
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    • Partial requirement for: M.S., Arizona State University, 2016
      Note type
      thesis
    • Includes bibliographical references (pages 47-49)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Praneeth Ranga

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