Gallium Nitride (GaN) based microelectronics technology is a fast growing and most exciting semiconductor technology in the fields of high power and high frequency electronics. Excellent electrical properties of GaN such as high carrier concentration and high carrier motility makes GaN based high electron mobility transistors (HEMTs) a preferred choice for RF applications. However, a very high temperature in the active region of the GaN HEMT leads to a significant degradation of the device performance by effecting carrier mobility and concentration.
Download count: 0
- Partial requirement for: M.S., Arizona State University, 2016Note typethesis
- Includes bibliographical references (pages 45-47)Note typebibliography
- Field of study: Electrical engineering