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This work demonstrates novel nBn photodetectors including mid-wave infrared (MWIR) nBn photodetectors based on InAs/InAsSb type-II superlattices (T2SLs) with charge as the output signal, and visible nBn photodetectors based on

This work demonstrates novel nBn photodetectors including mid-wave infrared (MWIR) nBn photodetectors based on InAs/InAsSb type-II superlattices (T2SLs) with charge as the output signal, and visible nBn photodetectors based on CdTe with current output. Furthermore, visible/MWIR two-color photodetectors (2CPDs) are fabricated through monolithic integration of the CdTe nBn photodetector and an InSb photodiode.

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    Date Created
    • 2016
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  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2016
      Note type
      thesis
    • Includes bibliographical references (pages 95-99)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Zhaoyu He

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