Description

In this work, transport in nanowire materials and nanowire field effect transistors is studied using a full band Monte Carlo simulator within the tight binding basis. Chapter 1 is dedicated

In this work, transport in nanowire materials and nanowire field effect transistors is studied using a full band Monte Carlo simulator within the tight binding basis. Chapter 1 is dedicated to the importance of nanowires and nanoscale devices in present day electronics and the necessity to use a computationally efficient tool to simulate transport in these devices.

Reuse Permissions
  • 6.4 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2016
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Partial requirement for: Ph.D., Arizona State University, 2016
      Note type
      thesis
    • Includes bibliographical references (pages 139-142)
      Note type
      bibliography
    • Field of study: Electrical engineering

    Citation and reuse

    Statement of Responsibility

    by Raghuraj Hathwar

    Machine-readable links