In this work, transport in nanowire materials and nanowire field effect transistors is studied using a full band Monte Carlo simulator within the tight binding basis. Chapter 1 is dedicated to the importance of nanowires and nanoscale devices in present day electronics and the necessity to use a computationally efficient tool to simulate transport in these devices.
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- Partial requirement for: Ph.D., Arizona State University, 2016Note typethesis
- Includes bibliographical references (pages 139-142)Note typebibliography
- Field of study: Electrical engineering