Flash memories are critical for embedded devices to operate properly but are susceptible to radiation effects, which make flash memory a key factor to improve the reliability of circuitry. This thesis describes the simulation techniques used to analyze and predict total ionizing dose (TID) effects on 90-nm technology Silicon Storage Technology (SST) SuperFlash Generation 3 devices. Silvaco Atlas is used for both device level design and simulation purposes.
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- Partial requirement for: M.S., Arizona State University, 2016Note typethesis
- Includes bibliographical references (pages 80-83)Note typebibliography
- Field of study: Electrical engineering