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Flash memories are critical for embedded devices to operate properly but are susceptible to radiation effects, which make flash memory a key factor to improve the reliability of circuitry. This

Flash memories are critical for embedded devices to operate properly but are susceptible to radiation effects, which make flash memory a key factor to improve the reliability of circuitry. This thesis describes the simulation techniques used to analyze and predict total ionizing dose (TID) effects on 90-nm technology Silicon Storage Technology (SST) SuperFlash Generation 3 devices. Silvaco Atlas is used for both device level design and simulation purposes.

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    Date Created
    • 2016
    Resource Type
  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2016
      Note type
      thesis
    • Includes bibliographical references (pages 80-83)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Yitao Chen

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