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InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for

InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI photodetector materials such as HgCdTe.

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    Date Created
    • 2016
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  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2016
      Note type
      thesis
    • Includes bibliographical references (pages 76-78)
      Note type
      bibliography
    • Field of study: Materials science and engineering

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    by Arvind Joshua Jaydev Shalindar Christraj

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