InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI photodetector materials such as HgCdTe.
Download count: 0
- Partial requirement for: M.S., Arizona State University, 2016Note typethesis
- Includes bibliographical references (pages 76-78)Note typebibliography
- Field of study: Materials science and engineering