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High-performance III-V semiconductors based on ternary alloys and superlattice systems are fabricated, studied, and compared for infrared optoelectronic applications. InAsBi is a ternary alloy near the GaSb lattice constant

High-performance III-V semiconductors based on ternary alloys and superlattice systems are fabricated, studied, and compared for infrared optoelectronic applications. InAsBi is a ternary alloy near the GaSb lattice constant that is not as thoroughly investigated as other III-V alloys and that is challenging to produce as Bi has a tendency to surface segregate and form droplets during growth rather than incorporate. A growth window is identified within which high-quality droplet-free bulk InAsBi is produced and Bi mole fractions up to 6.4% are obtained.

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    Date Created
    • 2016
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  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2016
      Note type
      thesis
    • Includes bibliographical references (pages 153-157)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Preston Thomas Webster

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