Measurements of the geometrical magnetoresistance of a conventional semiconductor, gallium arsenide (GaAs), and a more recently developed semiconductor, iron pyrite (FeS2) were measured in the Corbino disc geometry as a function of magnetic field to determine the carrier mobility (μm). These results were compared with measurements of the Hall mobility (μH) made in the Van der Pauw configuration. The scattering coefficient (ξ), defined as the ratio between magnetoresistance and Hall mobility (μm/μH), was determined experimentally for GaAs and natural pyrite from 300 K to 4.2 K.
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- Materials Science
- Electrical Engineering
- Carrier Mobilties
- Geometrical Magnetoresistance
- Hall Measurement
- High Resistive Semiconductor
- Transport properties
- Gallium arsenide semiconductors
- Pyrites--Magnetic properties.
- Gallium arsenide--Magnetic properties.
- Gallium arsenide
- Partial requirement for: M.S., Arizona State University, 2016Note typethesis
- Includes bibliographical references (pages 62-63)Note typebibliography
- Field of study: Materials science and engineering