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In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and

In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown in this work. Moreover, a separate section is dedicated the set up of a procedure to validate to the tunneling algorithm recently implemented in the simulator.

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    Date Created
    • 2016
    Resource Type
  • Text
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    Note
    • Partial requirement for: Ph.D., Arizona State University, 2016
      Note type
      thesis
    • Includes bibliographical references (pages 130-135)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Riccardo Soligo

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