Description

This work implements three switched mode power amplifier topologies namely inverse class-D (CMCD), push-pull class-E and inverse push-pull class-E, in a GaN-on-Si process for medium power level (5-10W) femto/pico-cells base-station

This work implements three switched mode power amplifier topologies namely inverse class-D (CMCD), push-pull class-E and inverse push-pull class-E, in a GaN-on-Si process for medium power level (5-10W) femto/pico-cells base-station applications. The presented power amplifiers address practical implementation design constraints and explore the fundamental performance limitations of switched-mode power amplifiers for cellular band.

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    Date Created
    • 2015
    Resource Type
  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2015
      Note type
      thesis
    • Includes bibliographical references (pages 53-57)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Shishir Ramasare Shukla

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