Full metadata
Title
In-field built-in self-test for measuring RF transmitter power and gain
Description
RF transmitter manufacturers go to great extremes and expense to ensure that their product meets the RF output power requirements for which they are designed. Therefore, there is an urgent need for in-field monitoring of output power and gain to bring down the costs of RF transceiver testing and ensure product reliability. Built-in self-test (BIST) techniques can perform such monitoring without the requirement for expensive RF test equipment. In most BIST techniques, on-chip resources, such as peak detectors, power detectors, or envelope detectors are used along with frequency down conversion to analyze the output of the design under test (DUT). However, this conversion circuitry is subject to similar process, voltage, and temperature (PVT) variations as the DUT and affects the measurement accuracy. So, it is important to monitor BIST performance over time, voltage and temperature, such that accurate in-field measurements can be performed.
In this research, a multistep BIST solution using only baseband signals for test analysis is presented. An on-chip signal generation circuit, which is robust with respect to time, supply voltage, and temperature variations is used for self-calibration of the BIST system before the DUT measurement. Using mathematical modelling, an analytical expression for the output signal is derived first and then test signals are devised to extract the output power of the DUT. By utilizing a standard 180nm IBM7RF CMOS process, a 2.4GHz low power RF IC incorporated with the proposed BIST circuitry and on-chip test signal source is designed and fabricated. Experimental results are presented, which show this BIST method can monitor the DUT’s output power with +/- 0.35dB accuracy over a 20dB power dynamic range.
In this research, a multistep BIST solution using only baseband signals for test analysis is presented. An on-chip signal generation circuit, which is robust with respect to time, supply voltage, and temperature variations is used for self-calibration of the BIST system before the DUT measurement. Using mathematical modelling, an analytical expression for the output signal is derived first and then test signals are devised to extract the output power of the DUT. By utilizing a standard 180nm IBM7RF CMOS process, a 2.4GHz low power RF IC incorporated with the proposed BIST circuitry and on-chip test signal source is designed and fabricated. Experimental results are presented, which show this BIST method can monitor the DUT’s output power with +/- 0.35dB accuracy over a 20dB power dynamic range.
Date Created
2015
Contributors
- Gangula, Sudheer Kumar Reddy (Author)
- Kitchen, Jennifer (Thesis advisor)
- Ozev, Sule (Committee member)
- Ogras, Umit Y. (Committee member)
- Arizona State University (Publisher)
Topical Subject
Resource Type
Extent
viii, 40 pages : illustrations (some color)
Language
Copyright Statement
In Copyright
Primary Member of
Peer-reviewed
No
Open Access
No
Handle
https://hdl.handle.net/2286/R.I.36378
Statement of Responsibility
by Sudheer Kumar Reddy Gangula
Description Source
Viewed on February 5, 2016
Level of coding
full
Note
Partial requirement for: M.S., Arizona State University, 2015
Note type
thesis
Includes bibliographical references (pages 38-40)
Note type
bibliography
Field of study: Electrical engineering
System Created
- 2016-02-01 07:00:47
System Modified
- 2021-08-30 01:26:10
- 2 years 7 months ago
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