InAs/InAsSb type-II superlattices (T2SLs) can be considered as potential alternatives for conventional HgCdTe photodetectors due to improved uniformity, lower manufacturing costs with larger substrates, and possibly better device performance. This dissertation presents a comprehensive study on the structural, optical and electrical properties of InAs/InAsSb T2SLs grown by Molecular Beam Epitaxy.
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- Partial requirement for: Ph.D., Arizona State University, 2015Note typethesis
- Includes bibliographical referencesNote typebibliography
- Field of study: Materials science and engineering