Description

The development of high efficiency III-V solar cells is needed to meet the demands of a promising renewable energy source. Intermediate band solar cells (IBSCs) using semiconductor quantum dots (QDs)

The development of high efficiency III-V solar cells is needed to meet the demands of a promising renewable energy source. Intermediate band solar cells (IBSCs) using semiconductor quantum dots (QDs) have been proposed to exceed the Shockley-Queisser efficiency limit [1]. The introduction of an IB in the forbidden gap of host material generates two additional carrier transitions for sub-bandgap photon absorption, leading to increased photocurrent of IBSCs while simultaneously allowing an open-circuit voltage of the highest band gap.

Reuse Permissions
  • 3.37 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2015
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Partial requirement for: Ph.D., Arizona State University, 2015
      Note type
      thesis
    • Includes bibliographical references (pages 118-125)
      Note type
      bibliography
    • Field of study: Electrical engineering

    Citation and reuse

    Statement of Responsibility

    by Yeongho Kim

    Machine-readable links