The development of high efficiency III-V solar cells is needed to meet the demands of a promising renewable energy source. Intermediate band solar cells (IBSCs) using semiconductor quantum dots (QDs) have been proposed to exceed the Shockley-Queisser efficiency limit . The introduction of an IB in the forbidden gap of host material generates two additional carrier transitions for sub-bandgap photon absorption, leading to increased photocurrent of IBSCs while simultaneously allowing an open-circuit voltage of the highest band gap.
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- Partial requirement for: Ph.D., Arizona State University, 2015Note typethesis
- Includes bibliographical references (pages 118-125)Note typebibliography
- Field of study: Electrical engineering