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From 2D planar MOSFET to 3D FinFET, the geometry of semiconductor devices is getting more and more complex. Correspondingly, the number of mesh grid points increases largely to maintain the

From 2D planar MOSFET to 3D FinFET, the geometry of semiconductor devices is getting more and more complex. Correspondingly, the number of mesh grid points increases largely to maintain the accuracy of carrier transport and heat transfer simulations. By substituting the conventional uniform mesh with non-uniform mesh, one can reduce the number of grid points. However, the problem of how to solve governing equations on non-uniform mesh is then imposed to the numerical solver.

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    Date Created
    • 2015
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  • Text
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    • Partial requirement for: M.S., Arizona State University, 2015
      Note type
      thesis
    • Includes bibliographical references (p. 59-60)
      Note type
      bibliography
    • Field of study: Materials science and engineering

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    by Xinchen Guo

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