Full metadata
Title
Grain boundary passivation of multicrystalline silicon using hydrogen sulfide as a sulfur source
Description
Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon (c-Si). Sulfur can be used both from solution and hydrogen sulfide gas. For multicrystalline silicon (mc-Si) solar cells, increasing efficiency is a major challenge because passivation of mc-Si wafers is more difficult due to its randomly orientated crystal grains and the principal source of recombination is contributed by the defects in the bulk of the wafer and surface.
In this work, a new technique for grain boundary passivation for multicrystalline silicon using hydrogen sulfide has been developed which is accompanied by a compatible Aluminum oxide (Al2O3) surface passivation. Minority carrier lifetime measurement of the passivated samples has been performed and the analysis shows that success has been achieved in terms of passivation and compared to already existing hydrogen passivation, hydrogen sulfide passivation is actually better. Also the surface passivation by Al2O3 helps to increase the lifetime even more after post-annealing and this helps to attain stability for the bulk passivated samples. Minority carrier lifetime is directly related to the internal quantum efficiency of solar cells. Incorporation of this technique in making mc-Si solar cells is supposed to result in higher efficiency cells. Additional research is required in this field for the use of this technique in commercial solar cells.
In this work, a new technique for grain boundary passivation for multicrystalline silicon using hydrogen sulfide has been developed which is accompanied by a compatible Aluminum oxide (Al2O3) surface passivation. Minority carrier lifetime measurement of the passivated samples has been performed and the analysis shows that success has been achieved in terms of passivation and compared to already existing hydrogen passivation, hydrogen sulfide passivation is actually better. Also the surface passivation by Al2O3 helps to increase the lifetime even more after post-annealing and this helps to attain stability for the bulk passivated samples. Minority carrier lifetime is directly related to the internal quantum efficiency of solar cells. Incorporation of this technique in making mc-Si solar cells is supposed to result in higher efficiency cells. Additional research is required in this field for the use of this technique in commercial solar cells.
Date Created
2014
Contributors
- Saha, Arunodoy, Ph.D (Author)
- Tao, Meng (Thesis advisor)
- Vasileska, Dragica (Committee member)
- Goryll, Michael (Committee member)
- Arizona State University (Publisher)
Topical Subject
Resource Type
Extent
vii, 56 p. : ill. (some col.)
Language
Copyright Statement
In Copyright
Primary Member of
Peer-reviewed
No
Open Access
No
Handle
https://hdl.handle.net/2286/R.I.27513
Statement of Responsibility
by Arunodoy Saha
Description Source
Viewed on March 9, 2015
Level of coding
full
Note
Partial requirement for: M.S., Arizona State University, 2014
Note type
thesis
Includes bibliographical references (p. 54-56)
Note type
bibliography
Field of study: Electrical engineering
System Created
- 2015-02-01 07:09:31
System Modified
- 2021-08-30 01:31:02
- 2 years 8 months ago
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