Group III-nitride semiconductors have been commercially used in the fabrication of light-emitting diodes and laser diodes, covering the ultraviolet-visible-infrared spectral range and exhibit unique properties suitable for modern optoelectronic applications. InGaN ternary alloys have energy band gaps ranging from 0.7 to 3.4 eV. It has a great potential in the application for high efficient solar cells. AlGaN ternary alloys have energy band gaps ranging from 3.4 to 6.2 eV. These alloys have a great potential in the application of deep ultra violet laser diodes.
Download count: 0
- Partial requirement for: Ph.D., Arizona State University, 2014Note typethesis
- Includes bibliographical referencesNote typebibliography
- Field of study: Physics