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Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while

Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics.

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    Date Created
    • 2014
    Resource Type
  • Text
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    • Partial requirement for: M.S., Arizona State University, 2014
      Note type
      thesis
    • Includes bibliographical references (p. 40-46)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Saba Rajabi

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