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The research described in this dissertation involved the use of transmission electron microscopy (TEM) to characterize II-VI and III-V compound semiconductor quantum dots (QDs) and dilute-nitride alloys grown by molecular

The research described in this dissertation involved the use of transmission electron microscopy (TEM) to characterize II-VI and III-V compound semiconductor quantum dots (QDs) and dilute-nitride alloys grown by molecular beam epitaxy (MBE) and intended for photovoltaic applications. The morphology of CdTe QDs prepared by the post-annealing MBE method were characterized by various microscopy techniques including high-resolution transmission electron microscopy (HR-TEM), and high-angle annular-dark-field scanning transmission electron microscopy (HAADF-STEM).

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    Date Created
    • 2014
    Resource Type
  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2014
      Note type
      thesis
    • Includes bibliographical references
      Note type
      bibliography
    • Field of study: Materials science and engineering

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    by Dinghao Tang

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