Non-volatile memories (NVM) are widely used in modern electronic devices due to their non-volatility, low static power consumption and high storage density. While Flash memories are the dominant NVM technology, resistive memories such as phase change access memory (PRAM) and spin torque transfer random access memory (STT-MRAM) are gaining ground. All these technologies suffer from reliability degradation due to process variations, structural limits and material property shift.
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- Partial requirement for: Ph.D., Arizona State University, 2014Note typethesis
- Includes bibliographical references (p. 156-164)Note typebibliography
- Field of study: Electrical engineering