This thesis work mainly examined the stability and reliability issues of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors under bias-illumination stress. Amorphous hydrogenated silicon has been the dominating material used in thin film transistors as a channel layer. However with the advent of modern high performance display technologies, it is required to have devices with better current carrying capability and better reproducibility. This brings the idea of new material for channel layer of these devices.
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- Partial requirement for: M.S., Arizona State University, 2013Note typethesis
- Includes bibliographical references (p. 62-65)Note typebibliography
- Field of study: Electrical engineering