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GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional

GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development.

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    Date Created
    • 2013
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  • Text
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    • Partial requirement for: M.S., Arizona State University, 2013
      Note type
      thesis
    • Includes bibliographical references (p. 76-81)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Towhid Chowdhury

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