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This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals

This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates.

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    Date Created
    • 2013
    Resource Type
  • Text
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    Note
    • Partial requirement for: Ph.D., Arizona State University, 2013
      Note type
      thesis
    • Includes bibliographical references (p. 108-115)
      Note type
      bibliography
    • Field of study: Materials science and engineering

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    by Rajitha Vemuri

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