This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates.
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- Partial requirement for: Ph.D., Arizona State University, 2013Note typethesis
- Includes bibliographical references (p. 108-115)Note typebibliography
- Field of study: Materials science and engineering