Description

High electron mobility transistors (HEMTs) based on Group III-nitride heterostructures have been characterized by advanced electron microscopy methods including off-axis electron holography, nanoscale chemical analysis, and electrical measurements, as well

High electron mobility transistors (HEMTs) based on Group III-nitride heterostructures have been characterized by advanced electron microscopy methods including off-axis electron holography, nanoscale chemical analysis, and electrical measurements, as well as other techniques. The dissertation was organized primarily into three topical areas: (1) characterization of near-gate defects in electrically stressed AlGaN/GaN HEMTs, (2) microstructural and chemical analysis of the gate/buffer interface of AlN/GaN HEMTs, and (3) studies of the impact of laser-liftoff processing on AlGaN/GaN HEMTs.

Reuse Permissions
  • 6.97 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2012
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Partial requirement for: Ph.D., Arizona State University, 2012
      Note type
      thesis
    • Includes bibliographical references
      Note type
      bibliography
    • Field of study: Physics

    Citation and reuse

    Statement of Responsibility

    by Michael R. Johnson

    Machine-readable links