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Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and

Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV).

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    Date Created
    • 2012
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  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2012
      Note type
      thesis
    • Includes bibliographical references (p. 123-131)
      Note type
      bibliography
    • Field of study: Physics

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    by Jin Fan

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