Description

This work is an investigation into the information provided by the concurrent use of in situ reflection high energy electron diffraction (RHEED) and reflection electron energy loss spectroscopy (REELS). The

This work is an investigation into the information provided by the concurrent use of in situ reflection high energy electron diffraction (RHEED) and reflection electron energy loss spectroscopy (REELS). The two analytical methods were employed during growth of metal, semiconductor and superconductor thin films by molecular beam epitaxy (MBE). Surface sensitivity of the REELS spectrometer was found to be less than 1 nm for 20 KeV electrons incident at a 2 degree angle to an atomically flat film surface, agreeing with the standard electron escape depth data when adjusted incident angle.

Reuse Permissions
  • 10.05 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2012
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Ph.D. Engineering Science 2012

    Machine-readable links