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Lateral Double-diffused (LDMOS) transistors are commonly used in power management, high voltage/current, and RF circuits. Their characteristics include high breakdown voltage, low on-resistance, and compatibility with standard CMOS and BiCMOS

Lateral Double-diffused (LDMOS) transistors are commonly used in power management, high voltage/current, and RF circuits. Their characteristics include high breakdown voltage, low on-resistance, and compatibility with standard CMOS and BiCMOS manufacturing processes. As with other semiconductor devices, an accurate and physical compact model is critical for LDMOS-based circuit design. The goal of this research work is to advance the state-of-the-art by developing a physics-based scalable compact model of LDMOS transistors.

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    Date Created
    • 2012
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  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2012
      Note type
      thesis
    • Includes bibliographical references (p. 93-109)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Wei Yao

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